RESUMO
Despite its unrivaled hardness, diamond can be severely worn during the interaction with others, even softer materials. In this work, we calculate from first-principles the energy and forces necessary to induce the atomistic wear of diamond and compare them for different surface orientations and passivation by oxygen, hydrogen, and water fragments. The primary mechanism of wear is identified as the detachment of the carbon chains. This is particularly true for oxidized diamond and diamonds interacting with silica. A very interesting result concerns the role of stress, which reveals that compressive stresses can highly favor wear, making it even energetically favorable.
RESUMO
Due to its unique optical, electrical, and chemical properties, tin dioxide (SnO2) thin films attract enormous attention as a potential material for gas sensors, catalysis, low-emissivity coatings for smart windows, transparent electrodes for low-cost solar cells, etc. However, the low-cost and high-throughput fabrication of SnO2 thin films without producing corrosive or toxic by-products remains challenging. One appealing deposition technique, particularly well-adapted to films presenting nanometric thickness is atomic layer deposition (ALD). In this work, several metalorganic tin-based complexes, namely, tin(IV) tert-butoxide, bis[bis(trimethylsilyl)amino] tin(II), dibutyltin diacetate, tin(II) acetylacetonate, tetrakis(dimethylamino) tin(IV), and dibutyltin bis(acetylacetonate), were explored thanks to DFT calculations. Our theoretical calculations suggest that the three last precursors are very appealing for ALD of SnO2 thin films. The potential use of these precursors for atmospheric-pressure spatial atomic layer deposition (AP-SALD) is also discussed. For the first time, we experimentally demonstrate the AP-SALD growth of SnO2 thin films using tin(II) acetylacetonate (Sn(acac)2) and water. We observe that Sn(acac)2 exhibits efficient ALD activity with a relatively large ALD temperature window (140-200 °C), resulting in a growth rate of 0.85 ± 0.03 Å per cyc. XPS analyses show a single Sn 3d5/2 characteristic peak for Sn4+ at 486.8 ± 0.3 eV, indicating that a pure SnO2 phase is obtained within the ALD temperature window. The as-deposited SnO2 thin films are in all cases amorphous, and film conductivity increases with the deposition temperature. Hall effect measurements confirm the n-type nature of SnO2 with a free electron density of about 8 × 1019 cm-3, electron mobility up to 11.2 cm2 V-1 s-1, and resistivity of 7 × 10-3 Ω cm for samples deposited at 270 °C.
RESUMO
In this paper, density functional theory simulations were conducted to investigate the structural adaptation of sodium borates xNa2O·(100-x)B2O3 (x = 25, 33, 50, and 60 mol %) during the compression/decompression between 0 and 10 GPa. The sodium borates are confined between two Fe2O3 substrates and undergo the compression by reducing the gap between the two surfaces. The results reveal the borate response to the load through a two-stage transformation: rearrangement at low pressure and polymerization at high pressure. The pressure required to initiate the polymerization depends directly on the portion of fourfold-coordinated ([4]B) boron in the sodium borates. We found that the polymerization occurs through three different mechanisms to form BO4 tetrahedra with surface oxygen and nonbridging and bridging oxygen. The electronic structure was analyzed to understand the nature of these mechanisms. The conversions from BO3 to BO4 are mostly irreversible as a large number of newly formed BO4 remain unchanged under the decompression. In addition, the formation of a sodium-rich layer can be observed when the systems were compressed to high pressure. Our simulation provides insight into sodium borate glass responses to extreme condition and the underlying electronic mechanisms that can account for these behaviors.
