Ionization levels of doped copper indium sulfide chalcopyrites.

The electronic structure of modified chalcopyrite CuInS(2) has been analyzed from first principles within the density functional theory. The host chalcopyrite has been modified by introducing atomic impurities M at substitutional sites in the lattice host with M = C, Si, Ge, Sn, Ti, V, Cr, Fe, Co, Ni, Rh, and Ir. Both substitutions M for In and M for Cu have been analyzed. The gap and ionization energies are obtained as a function of the M-S displacements. It is interesting for both spintronic and optoelectronic applications because it can provide significant information with respect to the pressure effect and the nonradiative recombination.

Mechanism of molecular hydrogen dissociation on gold chains and clusters as model prototypes of nanostructures.

The reactivity of H(2) on several gold clusters is studied using density functional theory with generalized gradient approximation methods, as model systems designed to study the main effects determining their catalytic properties under controlled conditions. Border effects are studied in finite linear gold chains of increasing size and compared with the corresponding periodic systems. In these linear chains, the reaction can proceed with no barrier along the minimum energy path, presenting a deep chemisorption well of approximately 1.4 eV. The mechanism presents an important dependence on the initial attacking site of the chain. Linear Au(4) chains joined to model-nanocontacts, formed by 2 or 3 gold atoms, in a planar triangle or in a pyramid, respectively, are also studied. The reaction barriers found in these two cases are approximately 0.24 and 0.16 eV, respectively, corresponding to H(2) attacking the more coordinated edge atom of the linear chain. The study is extended to planar clusters with coordinations IV and VI, for which higher H(2) dissociation barriers are found. However, when the planar gold clusters are folded, and the Au-Au distances elongated, the reactivity increases considerably. This is not due to a change of coordination, but to a larger flexibility of the gold orbitals to form bonds with hydrogen atoms, when the planar sd-hybridization is broken. Finally, it is concluded that the major factor determining the reactivity of gold clusters is not strictly the coordination of gold atoms but their binding structure and some border effects.

Effects of the orbital self-interaction in both strongly and weakly correlated systems.

The orbital occupation, which is the centerpiece of both self-interaction and several metal-insulator transition analyses, as well as of the local density or generalized gradient approximation with a Hubbard term, is not well defined, in the sense that it is partially ambiguous. A general treatment can be applied to both strongly and weakly correlated systems. When it is applied to an intermediate- and partially filled band within of the host semiconductor gap whose width is less than the semiconductor gap, the original single band can either split as in a Mott transition or not. The former situation is usual and almost always generalized. However the latter also takes place and results from a dilution effect of the self-interaction where a large orbital correlation is reduced if there are other orbital contributions with lower self-interaction in the band. The key is in the choice of the subspace of correlated orbitals. This effect can neither be ignored nor discarded for those systems where there is a substantial mix of states. Examples of these behaviors will be presented and compared to other results. Moreover, the combination of different Hubbard terms acting on different atomic state subspaces can also be used to correct the spurious self-interaction of the bands and the gap underestimation. The relationship between these terms applied to different subspaces of correlated electrons will be presented.

Correlation and nuclear distortion effects of Cr-substituted ZnSe.

There is a great deal of interest in the effect of the correlation and effect of the atomic distortion in materials with a metallic intermediate band. This band, situated within the semiconductor band gaps, would be split, thus creating two bands, a full one below the Fermi energy and an empty one above it, i.e., a metal-insulator transition. This basic electronic band structure corresponds to intermediate band materials and is characteristic of transparent-conducting oxides, up and down converters, and intermediate band solar cells. A sufficiently high density of Cr in ZnSe substituting the Zn atoms leads to a microscopic intermediate band, in which these effects will be analyzed. A Hubbard term has been included to improve the description of the many-body effect. This term modifies the bandwidth of the intermediate band, the Fermi energy, and breaks the orbital-occupation degeneracy. From the results, the intermediate band is not split within the range of Hubbard term values analyzed and for Cr substituting Zn from 0.463% to 3.125% of Cr atomic concentration.

Optoelectronic properties analysis of Ti-substituted GaP.

A study using first principles of the electronic and optical properties of materials derived from a GaP host semiconductor where one Ti atom is substituted for one of the eight P atoms is presented. This material has a metallic intermediate band sandwiched between the valence and conduction bands of the host semiconductor for 0 < or = U < or = 8 eV where U is the Hubbard parameter. The potential of these materials is that when they are used as an absorber of photons in solar cells, the efficiency is increased significantly with respect to that of the host semiconductor. The results show that the main contribution to the intermediate band is the Ti atom and that this material can absorb photons of lower energy than that of the host semiconductor. The efficiency is increased with respect to that of the host semiconductor mainly because of the absorption from the intermediate to conduction band. As U increases, the contribution of the Ti-d orbitals to the intermediate band varies, increasing the d(z2) character at the bottom of the intermediate band.

Energy levels in self-assembled quantum arbitrarily shaped dots.

A model to determine the electronic structure of self-assembled quantum arbitrarily shaped dots is applied. This model is based principally on constant effective mass and constant potentials of the barrier and quantum dot material. An analysis of the different parameters of this model is done and compared with those which take into account the variation of confining potentials, bands, and effective masses due to strain. The results are compared with several spectra reported in literature. By considering the symmetry, the computational cost is reduced with respect to other methods in literature. In addition, this model is not limited by the geometry of the quantum dot.

Correlation effects and electronic properties of Cr-substituted SZn with an intermediate band.

A study using first principles of the electronic properties of S32Zn31Cr, a material derived from the SZn host semiconductor where a Cr atom has been substituted for each of the 32 Zn atoms, is presented. This material has an intermediate band sandwiched between the valence and conduction bands of the host semiconductor, which in a formal band-theoretic picture is metallic because the Fermi energy is located within the impurity band. The potential technological application of these materials is that when they are used to absorb photons in solar cells, the efficiency increases significantly with respect to the host semiconductor. An analysis of the gaps, bandwidths, density of states, total and orbital charges, and electronic density is carried out. The main effects of the local-density approximation with a Hubbard term corrections are an increase in the bandwidth, a modification of the relative composition of the five d and p transition-metal orbitals, and a splitting of the intermediate band. The results demonstrate that the main contribution to the intermediate band is the Cr atom. For values of U greater than 6 eV, where U is the empirical Hubbard term U parameter, this band is unfolded, thus creating two bands, a full one below the Fermi energy and an empty one above it, i.e., a metal-insulator transition.

First principles calculations of electronic structures and metal mobility of Na(x)Si(46) and Na(x)Si(34) clathrates.

Energetics, geometry, electronic band structures, and charge transfer for Na(x)Si(46) and Na(x)Si(34) clathrates with different degrees of cavity filling by sodium, and the mobility of the Na atom inside the different cavities are studied using first principles density functional calculations within the generalized gradient approximation. The stabilization of the clathrate lattice and the cell volume variation upon the inclusion of Na (which appears to move easily in the larger cavities of Na(x)Si(34), thus justifying the experimental observations) are discussed in connection with the onset of the repulsion between Na and Si for distances shorter than approximately 3.4 A. For all degrees of filling of the different cavities examined we find that the electron population of the s orbitals in the partially ionized Na atoms increases with a decrease in the size of the cavity, and that the Na states contribute significantly to the density of states at the Fermi level and thus influence the properties of these compounds.

Application of the exact exchange potential method for half metallic intermediate band alloy semiconductor.

In this paper we present an analysis of the convergence of the band structure properties, particularly the influence on the modification of the bandgap and bandwidth values in half metallic compounds by the use of the exact exchange formalism. This formalism for general solids has been implemented using a localized basis set of numerical functions to represent the exchange density. The implementation has been carried out using a code which uses a linear combination of confined numerical pseudoatomic functions to represent the Kohn-Sham orbitals. The application of this exact exchange scheme to a half-metallic semiconductor compound, in particular to Ga(4)P(3)Ti, a promising material in the field of high efficiency solar cells, confirms the existence of the isolated intermediate band in this compound.