RESUMO
A mode-locked extended cavity quantum well ring laser at 1.58 µm with a repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP-based active-passive integration technology. The 33 mm long cavity contains gain, saturable absorption, and passive waveguide sections as well as phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive and hybrid mode-locked operation, along with the wavelength tuning of the laser modes, are experimentally demonstrated. In the passive mode-locking regime, a beat signal at the fundamental round trip frequency with a 3 dB bandwidth of 6.1 kHz is produced on a fast photo diode.
RESUMO
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.
