Coexistence of superconductivity and charge-density wave in the quasi-one-dimensional material HfTe3.

We present the first experimental evidence for metallicity, superconductivity (SC) and the co-existence of charge density waves (CDW) in the quasi-one-dimensional material HfTe3. The existence of such phenomena is a typical characteristic of the transition metal chalcogenides however, without the application of hydrostatic pressure/chemical doping, it is rare for a material to exhibit the co-existence of both states. Materials such as HfTe3 can therefore provide us with a unique insight into the relationship between these multiple ordered states. By improving on the original synthesis conditions, we have successfully synthesised single phase HfTe3 and confirmed the resultant structure by performing Rietveld refinement. Using low temperature resistivity measurements, we provide the first experimental evidence of SC at ~1.4 K as well as a resistive anomaly indicative of a CDW formation at ~82 K. By the application of hydrostatic-pressure, the resistivity anomaly shifts to higher temperature. The results show that HfTe3 is a promising new material to help study the relationship between SC and CDW.

Imaging of current density distributions with a Nb weak-link scanning nano-SQUID microscope.

Superconducting quantum interference devices (SQUIDs) are accepted as one of the highest magnetic field sensitive probes. There are increasing demands to image local magnetic fields to explore spin properties and current density distributions in a two-dimensional layer of semiconductors or superconductors. Nano-SQUIDs have recently attracting much interest for high spatial resolution measurements in nanometer-scale samples. Whereas weak-link Dayem Josephson junction nano-SQUIDs are suitable to miniaturization, hysteresis in current-voltage (I-V) characteristics that is often observed in Dayem Josephson junction is not desirable for a scanning microscope. Here we report on our development of a weak-link nano-SQUIDs scanning microscope with small hysteresis in I-V curve and on reconstructions of two-dimensional current density vector in two-dimensional electron gas from measured magnetic field.

Supercurrent through InAs nanowires with highly transparent superconducting contacts.

One-dimensional superconducting transistors have been fabricated with individual InAs nanowires (NWs) using radio-frequency sputter cleaning followed by in situ metal deposition. Because of the highly transparent contacts formed in between the InAs NWs and the metals, supercurrent, multiple Andreev reflections and Shapiro steps under microwave radiation have been observed. Near pinch-off gate regions, Fabry-Perot interference and a normal conductance quantization with resonant features have been observed, which were found to be correlated with a supercurrent flow.

Transport properties of Andreev polarons in a superconductor-semiconductor-superconductor junction with superlattice structure.

Transport properties of a superconductor-semiconductor-superconductor (Su-Sm-Su) junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (rf) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction geometries. Experimental data are quantitatively explained in terms of the coupling of superconducting quasiparticles with long-wavelength acoustic phonons indirectly excited by the rf waves. We propose that the strong coupling causes the formation of novel composite particles, Andreev polarons.

Luminescence of a cooper pair.

This Letter theoretically discusses the photon emission spectra of a superconducting p-n junction. On the basis of the second order perturbation theory for electron-photon interaction, we show that the recombination of a Cooper pair with two p-type carriers causes enhancement of the luminescence intensity. The calculated results of photon emission spectra explain characteristic features of observed signal in an recent experiment. Our results indicate high functionalities of superconducting light-emitting devices.

Quantum time evolution in a qubit readout process with a Josephson bifurcation amplifier.

We analyzed the Josephson bifurcation amplifier (JBA) readout process of a superconducting qubit quantum mechanically by calculating the dynamics of the density operator of a driven nonlinear oscillator and a qubit coupled system during the measurement process. In purely quantum cases, bifurcation is impossible. Introducing decoherence enables us to reproduce the bifurcation with a finite hysteresis. When a qubit is initially in a superposition state, we have observed the qubit-probe (JBA) entangled state, and it is divided into two separable states at the moment the JBA transition begins. This corresponds to "projection." To readout the measurement result, however, we must wait until the two JBA states are macroscopically well separated. The waiting time is determined by the strength of the decoherence in the JBA.

Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/InGaAs/InAlAs quantum wells as a function of quantum well asymmetry.

We have investigated the values of the Rashba spin-orbit coupling constant alpha in In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As quantum wells using the weak antilocalization (WAL) analysis as a function of the structural inversion asymmetry (SIA) of the quantum wells. We have found that the deduced alpha values have a strong correlation with the degree of SIA of the quantum wells as predicted theoretically. The good agreement between the theoretical and experimental values of alpha suggests that our WAL approach for deducing alpha values provides a useful tool in designing future spintronics devices that utilize the Rashba spin-orbit coupling.

Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode.

We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.