Maskless photolithography based on ultraviolet micro-LEDs and direct writing method for improving pattern resolution.

Ultraviolet micro-LEDs show great potential as a light source for maskless photolithography. However, there are few reports on micro-LED based maskless photolithography systems, and the studies on the effects of system parameters on exposure patterns are still lacking. Hence, we developed a maskless photolithography system that employs micro-LEDs with peak wavelength 375 nm to produce micrometer-sized exposure patterns in photoresists. We also systematically explored the effects of exposure time and current density of micro-LED on static direct writing patterns, as well as the effects of stage velocity and current pulse width on dynamic direct writing patterns. Furthermore, reducing the size of micro-LED pixels enables obtaining high-resolution exposure patterns, but this approach will bring technical challenges and high costs. Therefore, this paper proposes an oblique direct writing method that, instead of reducing the micro-LED pixel size, improves the pattern resolution by changing the tilt angle of the sample. The experimental results show that the linewidths of the exposed lines decreased by 4.0% and 15.2%, respectively, as the sample tilt angle increased from 0° to 15° and 30°, which confirms the feasibility of the proposed method to improve the pattern resolution. This method is also expected to correct the exposure pattern error caused by optical distortion of the lens in the photolithography system. The system and method reported can be applied in various fields such as PCBs, photovoltaics, solar cells, and MEMS.

Temperature-dependent electroluminescence of red high-In-content MQWs of dual-wavelength micro-LED.

Temperature-dependent electroluminescence (TDEL) measurements have been employed to investigate the carrier transport and recombination processes of InGaN red micro-LED based on dual-wavelength InGaN/GaN MQWs structure. EL peak energy and carrier transport of the red micro-LED both show temperature dependence, due to temperature-induced changes in defect activation. In addition, the current density at which the blue peak of the low-In-content appears in the EL spectrum varies with temperature. As the temperature increases, the blue peak of the low In component tends to appear at higher current densities, which may be attributed to the increase in thermally activated defects hindering the injection of holes into the low-In-content MQWs further away from p-GaN. Furthermore, the IQEs of the high-In-content MQWs are estimated from the TDEL method and then reveal the temperature-dependent efficiency droop. The IQE decreases as temperature increases, particularly above 50 K, where it drops sharply due to temperature-dependent nonradiative recombination. And the two different variation trends in IQE of MQWs with high and low In content reveal a competitive mechanism in carrier distribution, implying that more escaping holes from high-In-content MQWs will further reduce red emission efficiency but enhance carrier injection and blue emission in low-In-content MQWs.

Synthesis of continuous boron nitride nanofibers by solution coating electrospun template fibers.

Continuous boron nitride nanofibers (BNNFs) have been synthesized from boric oxide (B(2)O(3)) coatings deposited on stabilized electrospun polyacrylonitrile fibers (S-PANFs). The B(2)O(3) overcoatings were prepared by impregnating the S-PANFs with B(2)O(3) ethanol solutions. By successive heat treatments at 800 degrees C in NH(3)/O(2) mixture, 1100 degrees C in pure NH(3), and 1500 degrees C in N(2), the S-PANFs were fully removed and the B(2)O(3) coatings deflate to form solid fibers and transform into the BNNFs. The S-PANF template was fully removed by introducing O(2) during nitridation, and thus resulted in the formation of the BNNFs. The diameter of the BNNFs can be effectively controlled by changing the mass concentration of the B(2)O(3) solution, and diameters from 43 to 230 nm were obtained by changing the B(2)O(3) mass concentration from 0.25% to 4.8%. The obtained BNNFs are crystallized with the (002) planes oriented in parallel to the fiber axis. This method provides a powerful tool for obtaining BNNFs with controllable diameters, especially extremely thin BNNFs.

Synthesis of Porous NiO and ZnO Submicro- and Nanofibers from Electrospun Polymer Fiber Templates.

Porous nickel oxide (NiO) and zinc oxide (ZnO) submicro- and nanofibers were synthesized by impregnating electrospun polyacrylonitrile (PAN) fiber templates with corresponding metal nitrate aqueous solutions and subsequent calcination. The diameter of the NiO and ZnO fibers was closely related to that of the template fibers and larger diameters were obtained when using the template fibers with larger diameter. SEM results showed that the NiO and ZnO fibers have a large amount of pores with diameters ranging from 5 nm to 20 nm and 50 nm to 100 nm, respectively. Energy dispersive X-ray (EDX) spectra and X-ray diffraction (XRD) patterns testified that the obtained materials were NiO and ZnO with high purity.