Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits.

Black phosphorus (BP), a fast emerging 2D material, has shown great potential in future electronics and optoelectronics owing to its outstanding properties including sizable band gap and ambipolar transport characteristics. However, its hole conduction dominance, featured by a much larger hole mobility and the corresponding on-current than that of the electrons, renders the reliable modulation of its carrier type and density a key challenge, thereby hindering its application to complementary electronics. Here, we demonstrate an efficient and reliable n-type doping for BP transistors via surface functionalization by atomic layer deposited magnesium oxide (MgO) with favorable controllability. By optimizing the MgO thickness, an electron mobility of up to 95.5 cm2 V-1 s-1 is reached with a simultaneous significant suppression of hole conduction. Subsequently, a high-performance complementary logic inverter is demonstrated within a single BP flake, which operates well with a supply voltage as low as <0.5 V, outperforming reported BP inverters in terms of logic level match, power consumption and process feasibility. Our findings suggest that surface charge transfer doping via MgO can be used as a promising technique towards high performance BP-based functional nanoelectronics.

Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics.

Many, black phosphorus (BP) based field-effect transistors, homojunctions, and vertical van der Waals structures have been developed for optoelectronic applications, with few studies being conducted on exploring the potential of their naturally formed heterojunctions. Here, we report a novel thickness-modulated, gate-tunable BP heterojunction phototransistor for multiple purposes and high performance optoelectronics. Despite its thickness of less than 5 nm, the device, whose fabrication spares the need for split-gate or chemical doping or vertical stacking requirements, achieves an excellent photoresponsivity of 383 A W-1 at 1550 nm under zero gate bias, which is among the best photoresponse performance of all-BP-based photodetectors in this spectral range. Furthermore, it exhibits a shot-noise-limited noise equivalent power (NEPshot) of less than 10-2 pW Hz-1/2, making it very promising for ultra-low power detection. Additionally, owing to the heterojunction-induced built-in electric field, the device can be readily used for infrared photovoltaic devices in the absence of source-drain bias (Vd), a feature that is distinctively superior to traditional phototransistors. The multifunctionality demonstrated in our BP heterojunction transistor paves the way towards realizing tunable improved performance optoelectronics based on 2D materials platform.

A Black Phosphorus Carbide Infrared Phototransistor.

Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet-of-things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak-signal and high-speed detections. Here, a novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b-PC phototransistor achieves a peak responsivity of 2163 A W-1 and a shot noise equivalent power of 1.3 fW Hz-1/2 at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high-speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top-performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V.

Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power.

The narrow band gap property of black phosphorus (BP) that bridges the energy gap between graphene and transition metal dichalcogenides holds great promise for enabling broadband optical detection from ultraviolet to infrared wavelengths. Despite its rich potential as an intriguing building block for optoelectronic applications, however, very little progress has been made in realizing BP-based infrared photodetectors. Here, we demonstrate a high sensitivity BP phototransistor that operates at a short-wavelength infrared (SWIR) of 2 µm under room temperature. Excellent tunability of responsivity and photoconductive gain are acquired by utilizing the electrostatic gating effect, which controls the dominant photocurrent generation mechanism via adjusting the band alignment in the phototransistor. Under a nanowatt-level illumination, a peak responsivity of 8.5 A/W and a low noise equivalent power (NEP) of less than 1 pW/Hz1/2 are achieved at a small operating source-drain bias of -1 V. Our phototransistor demonstrates a simple and effective approach to continuously tune the detection capability of BP photodetectors, paving the way to exploit BP to numerous low-light-level detection applications such as biomolecular sensing, meteorological data collection, and thermal imaging.

Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈105 cm2 V-1 s-1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm2 V-1 s-1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment.

Behavioural Strategies for Sleep and Burnout Amongst Primary Care Physicians

The prevalence of burnout amongst primary care physicians (PCPs) in Singapore is likely to be high. Burnout has a negative impact on sleep quality, and poor sleep quality in turn feeds into burnout resulting in a vicious perpetuating cycle. Evidenced-based behavioural strategies can be useful to help improve sleep quality, which in turn contributes to the amelioration of burnout. This article details some of the evidence-based behavioural strategies that PCPs can use to improve their own sleep quality if used consistently.

Enhancing Physician Well-Being Strategies from Positive Psychology

Due to the nature and demands of their work, healthcare professionals, including primary care physicians, are at risk of experiencing burnout. They might feel exhausted or lack enthusiasm and motivation toward their work and other aspects of life, despite experiencing no obvious difficulties or major problems. Positive psychology is the scientific study of positive emotions, positive traits and strengths, and the processes that promote well-being and optimal functioning (or what is termed as flourishing). This article introduces readers to positive psychology and discusses the concepts and techniques in the context of burnout in primary care physicians. Suggestions are provided on how to use strategies from positive psychology to achieve happiness and fulfilment in one’s life

Self-Template Synthesis of Porous Perovskite Titanate Solid and Hollow Submicrospheres for Photocatalytic Oxygen Evolution and Mesoscopic Solar Cells.

We describe a general synthesis strategy, which combines sol-gel and hydrothermal processes, for the large-scale synthesis of porous perovskite titanates spheres with tunable particle size and inner structures. Amorphous hydrous TiO2 solid spheres (AHTSS) are first synthesized by a sol-gel method and are then used as precursor and template for the subsequent hydrothermal reaction with alkaline earth metal ions in an alkaline medium. This strategy can be generalized to synthesize porous spheres of various perovskite titanates (i.e., SrTiO3, BaTiO3, and CaTiO3) consisting of single-crystalline nanocubes. By controlling the textural properties (i.e., size, porosity, and structure) of AHTSS, perovskite titanates with tunable size and inner structures are selectively synthesized. The underlying formation mechanism is manifested by XRD and TEM to involve in situ crystallization or Ostwald ripening during the hydrothermal process. The obtained porous SrTiO3 spheres present superior performance in photocatalytic oxygen evolution and CdSe-sensitized mesoscopic solar cells.