La26Ge19M5O5 (M = Ag, Cu): Rare-Earth Metal Suboxide Superconductors with [La18O5] Cluster Units.

Herein we report two reduced rare-earth metal-based superconductors, La26Ge19M5O5 (M = Ag, Cu), that feature an unprecedented [La18O5] cluster composed of five oxygen-centered [La6O] octahedra condensed through shared faces and capped with [Ge4] butterfly rings. The structure, determined by single-crystal X-ray diffraction, crystallizes in a tetragonal space group (P4/nmm), with a = 15.508(2) Å and c = 11.238(2) Å. Resistivity and magnetic susceptibility measurements show onsets of superconductivity at Tc = 5.4 and 6.4 K for the Ag and Cu compounds, respectively. Applying high pressures, up to 1.3 GPa, results in increased superconducting transition temperatures (Tc = 6.8 K for Ag and 7.2 K for Cu compounds), with no sign of saturation.

Interfacial Superconductivity Achieved in Parent AEFe2As2 (AE = Ca, Sr, Ba) by a Simple and Realistic Annealing Route.

Materials with interfaces often exhibit extraordinary phenomena exemplified by rich physics, such as high-temperature superconductivity and enhanced electronic correlations. However, demonstrations of confined interfaces to date have involved intensive effort and fortuity, and no simple path is consistently available. Here, we report the achievement of interfacial superconductivity in the nonsuperconducting parent compounds AEFe2As2, where AE = Ca, Sr, or Ba, by simple subsequent annealing of the as-grown samples in an atmosphere of As, P, or Sb. Our results indicate that the superconductivity originates from electron transfer at the interface of the hybrid van der Waals heterostructures, consistent with the two-dimensional superconducting transition observed. The observations suggest a common origin of interfaces for the nonbulk superconductivity previously reported in the AEFe2As2 compound family and provide insight for the further exploration of interfacial superconductivity.

Optical properties and lattice dynamics of a novel allotrope of orthorhombic elemental germanium.

Optical and vibrational properties of a novel allotrope of elemental germanium Ge(oP32), which crystallizes in the structure corresponding to the orthorhombic space group Pbcm, are studied experimentally by means of absorption and polarized Raman scattering measurements and theoretically using the first principles density functional theory. Material is found to be a direct band gap semiconductor with E g = 0.33 eV. Out of theoretically predicted 48 Raman-active modes, 27 are observed in the spectra and assigned to the specific lattice eigenmodes of the crystal based on their symmetry and a comparison with the results of first principles lattice dynamics calculations. Remarkably, the highest frequency vibration is observed at 316 cm-1, that is higher than the cubic crystalline [Formula: see text]-Ge mode at 300 cm-1. Exceptional sharpness of observed phonon lines (between 0.8 and 2.5 cm-1 at T = 10 K) implies excellent crystallinity of Ge(oP32) crystals.

Discovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency.

Thermoelectric materials are capable of converting waste heat into electricity. The dimensionless figure-of-merit (ZT), as the critical measure for the material's thermoelectric performance, plays a decisive role in the energy conversion efficiency. Half-Heusler materials, as one of the most promising candidates for thermoelectric power generation, have relatively low ZTs compared to other material systems. Here we report the discovery of p-type ZrCoBi-based half-Heuslers with a record-high ZT of ∼1.42 at 973 K and a high thermoelectric conversion efficiency of ∼9% at the temperature difference of ∼500 K. Such an outstanding thermoelectric performance originates from its unique band structure offering a high band degeneracy (Nv) of 10 in conjunction with a low thermal conductivity benefiting from the low mean sound velocity (vm ∼2800 m s-1). Our work demonstrates that ZrCoBi-based half-Heuslers are promising candidates for high-temperature thermoelectric power generation.

Narrow Gap Semiconducting Germanium Allotrope from the Oxidation of a Layered Zintl Phase in Ionic Liquids.

A metastable germanium allotrope, Ge(oP32), was synthesized as polycrystalline powders and single crystals from the mild-oxidation/delithiation of Li7Ge12 in ionic liquids. Its crystal structure, from single crystal X-ray diffraction ( Pbcm, a = 8.1527(4) Å, b = 11.7572(5) Å, c = 7.7617(4) Å), features a complex covalent network of 4-bonded Ge, resulting from a well-ordered topotactic oxidative condensation of [Ge12]7- layers. It is a diamagnetic semiconductor ( Eg = 0.33 eV), and transforms exothermically and irreversibly to α-Ge at 363 °C. This demonstrates the potential of ionic liquids as reactive media in the mild oxidation of Zintl phases to new highly crystallized modifications of elements and simple compounds.

Lattice Dynamics of the Rhombohedral Polymorphs of CaSi2.

The structures of two trigonal-rhombohedral CaSi2 polymorphs (space group R3̅m) were studied by X-ray diffraction and polarized Raman scattering spectroscopy. Raman-active even-parity vibrational modes of A1g and Eg are unambiguously identified and assigned to the specific lattice eigenmodes. Experimental data are found to be in very good agreement with those predicted by density functional theory lattice dynamics calculations. The transformation of 6R structural modification of CaSi2 into its 3R polymorph, by high-temperature annealing in vacuum is also reported.

Solvent engineering towards controlled grain growth in perovskite planar heterojunction solar cells.

We report an effective solvent engineering process to enable controlled perovskite crystal growth and a wider window for processing uniform and dense methyl ammonium lead iodide (MAPbI3) perovskite films. Planar heterojunction solar cells fabricated with this method demonstrate hysteresis-free performance with a power conversion efficiency around 10%. The crystal structure of an organic-based Pb iodide intermediate phase is identified for the first time, which is critical in controlling the crystal growth and optimizing thin film morphology.

Ba(1-x)Na(x)Ti2Sb2O (0.0 ≤ x ≤ 0.33): a layered titanium-based pnictide oxide superconductor.

A new layered Ti-based pnictide oxide superconductor, Ba(1-x)Na(x)Ti(2)Sb(2)O (0.0 ≤ x ≤ 0.33), is reported. X-ray studies revealed that it crystallizes in the tetragonal CeCr(2)Si(2)C structure. The undoped parent compound, BaTi(2)Sb(2)O [P4/mmm; a = 4.1196(1) Å; c = 8.0951(2) Å], exhibits a charge density wave (CDW)/spin density wave (SDW) transition at 54 K. Upon chemical doping with Na, the CDW/SDW transition is systematically suppressed, and superconductivity arises with the critical temperature (T(c)) increasing to 5.5 K. Bulk superconductivity was confirmed by resistivity, magnetic, and heat capacity measurements. Like the high-T(c) cuprates and the iron pnictides, the superconductivity in BaTi(2)Sb(2)O arises from an ordered state. Similarities and differences between BaTi(2)Sb(2)O and the cuprate and iron pnictide superconductors are discussed.

Synthesis and electron holography studies of single crystalline nanostructures of clathrate-II phases K(x)Ge136 and Na(x)Si136.

Crystalline nanosized particles of clathrate-II phases K(x)Ge(136) and Na(x)Si(136) were obtained from a dispersion of alkali metal tetrelides in ionic liquids based on DTAC/AlCl(3), which were slowly heated to 120-180 °C. The nanoparticles are bullet-shaped with typical dimensions of about 40 nm in width and 140-200 nm in length. Detailed structure investigations using high-resolution transmission electron microscopy (HRTEM) and electron holography reveal the crystallinity and dense morphology of the clathrate nanorods.

Remarkable rare-earth metal silicide oxides with planar Si6 rings.

New rare-earth silicide oxides, La10Si8O3 (1) and Ce10Si8O3 (2), were synthesized through high-temperature reactions of the pure elements under controlled oxygen atmosphere conditions. The remarkable silicides crystallize in a unique crystal structure (space group P6/mmm; a = 10.975(3) A (La) and 10.844(1) A (Ce); c = 4.680(1) A (La) and 4.561(1) A (Ce)) that features a 3-D framework of corner-shared O-centered (La/Ce)6 octahedra, reminiscent of hexagonal tungsten bronzes, with planar Si6 rings enclosed within its hexagonal channels. Band structure calculations indicate the compounds are metallic, with optimized La-Si bonds, and a benzene-like [Si6]6- anion. Compound 1 exhibits temperature independent paramagnetism. Compound 2 exhibits Curie-Weiss paramagnetism, and an antiferromagnetic ordering below 7 K.

A guest-free germanium clathrate.

The challenges associated with synthesizing expanded semiconductor frameworks with cage-like crystal structures continue to be of interest. Filled low-density germanium and silicon framework structures have distinct properties that address important issues in thermoelectric phonon glass-electron crystals, superconductivity and the possibility of Kondo insulators. Interest in empty framework structures of silicon and germanium is motivated by their predicted wide optical bandgaps of the same magnitude as quantum dots and porous silicon, making them and their alloys promising materials for silicon-based optoelectronic devices. Although almost-empty Na(1-x)Si136 has already been reported, the synthesis of guest-free germanium clathrate has so far been unsuccessful. Here we report the high-yield synthesis and characteristics of germanium with the empty clathrate-II structure through the oxidation of Zintl anions in ionic liquids under ambient conditions. The approach demonstrates the potential of ionic liquids as media for the reactions of polar intermetallic phases.

[H3N(CH2)7NH3]8(CH3NH3)2Sn(IV)Sn(II)12I46- a mixed-valent hybrid compound with a uniquely templated defect-perovskite structure.

The incorporation of H(3)N(CH(2))(7)NH(3) with CH(3)NH(3)SnI(3) resulted in the formation of a mixed-valent and semiconducting (Eg = 0.84 eV) organic-based perovskite, [H(3)N(CH(2))(7)NH(3)](8)(CH(3)NH(3))(2)Sn(iv)Sn(ii)(12)I(46), with a unique 3D defect-perovskite structure with ordered vacancies at the Sn and I sites.