Bifunctional Ni@NiO catalyst supported on loofah sponge-derived carbon for electrocatalytic air oxidation of biorefractory pollutant in a coupling system.

Oxygen (O2) in the air is a green oxidant, and utilization of air for pollutant removal is highly desired. Herein, we report the preparation and utilization of a novel biomass-based three-dimensional (3D) Ni@NiO/carbon composite for the electro-activation of O2 under room condition. The carbon-coated Ni@NiO nanoparticles are fabricated on a hierarchical 3D porous loofah sponge-derived carbon (LSC) support as the bifunctional catalyst for the activation of O2 via both the electro-oxidation and electro-reduction reactions. An electrocatalytic air oxidation coupling system is constructed with the Ni@NiO/LSC shell-core electrodes for pollutant degradation. A variety of organic pollutants, including pharmaceutics and personal care products (PPCPs), dyes, phenolic compounds, and real waters are mineralized by more than 60% with significantly enhanced biodegradability. Notably, the coupling system obtains high mineralization efficiency of 70.2 ± 1.9% on landfill leachate with significant biodegradability enhancement. The specific energy consumptions of the coupling system are only 6.8 ± 0.7 to 60.2 ± 3.6 kWh kg-TOC-1 in mineralizing different pollutants. The hollow structure of the LSC fibers endows the loaded Ni@NiO with superior intrinsic catalytic activity, which is associated with low reaction resistance and facile electron transfer. The Ni@NiO on LSC presents an electrocatalytic wet air oxidation (ECWAO) catalytic activity higher by 35.8% and cathodic air oxidation (CAO) catalytic activity higher by 22.7% as compared to that loaded on commercial graphite felt.

New analysis and design of a RF rectifier for RFID and implantable devices.

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-µm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.