1.
Br J Dermatol
; 184(6): 1202-1203, 2021 06.
Artigo
em Inglês
| MEDLINE
| ID: mdl-33481249
2.
Phys Rev Lett
; 87(14): 145501, 2001 Oct 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-11580660
RESUMO
Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.