Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting.

Strain engineering is ubiquitous in the design and fabrication of innovative, high-performance electronic, optoelectronic, and photovoltaic devices. The increasing importance of strain-engineered nanoscale materials has raised significant challenges at both fabrication and characterization levels. Raman scattering spectroscopy (RSS) is one of the most straightforward techniques that have been broadly utilized to estimate the strain in semiconductors. However, this technique is incapable of measuring the individual components of stress, thus only providing the average values of the in-plane strain. This inherit limitation severely diminishes the importance of RSS analysis and makes it ineffective in the predominant case of nanostructures and devices with a nonuniform distribution of strain. Herein, we circumvent this major limitation and demonstrate for the first time the application of RSS to simultaneously probe the two local stress in-plane components in individual ultrathin silicon nanowires based on the imaging of the splitting of the two forbidden transverse optical phonons.

Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire.

The accurate manipulation of strain in silicon nanowires can unveil new fundamental properties and enable novel or enhanced functionalities. To exploit these potentialities, it is essential to overcome major challenges at the fabrication and characterization levels. With this perspective, we have investigated the strain behavior in nanowires fabricated by patterning and etching of 15 nm thick tensile strained silicon (100) membranes. To this end, we have developed a method to excite the "forbidden" transverse-optical (TO) phonons in single tensile strained silicon nanowires using high-resolution polarized Raman spectroscopy. Detecting this phonon is critical for precise analysis of strain in nanoscale systems. The intensity of the measured Raman spectra is analyzed based on three-dimensional field distribution of radial, azimuthal, and linear polarizations focused by a high numerical aperture lens. The effects of sample geometry on the sensitivity of TO measurement are addressed. A significantly higher sensitivity is demonstrated for nanowires as compared to thin layers. In-plane and out-of-plane strain profiles in single nanowires are obtained through the simultaneous probe of local TO and longitudinal-optical (LO) phonons. New insights into strained nanowires mechanical properties are inferred from the measured strain profiles.

Tip-enhanced Raman spectroscopy for nanoscale strain characterization.

Tip-enhanced Raman spectroscopy (TERS), which utilizes the strong localized optical field generated at the apex of a metallic tip when illuminated, has been shown to successfully probe the vibrational spectrum of today's and tomorrow's state-of-the-art silicon and next-generation semiconductor devices, such as quantum dots. Collecting and analyzing the vibrational spectrum not only aids in material identification but also provides insight into strain distributions in semiconductors. Here, the potential of TERS for nanoscale characterization of strain in silicon devices is reviewed. Emphasis will be placed on the key challenges of obtaining spectroscopic images of strain in actual strained silicon devices.

Controlling the plasmon resonance wavelength in metal-coated probe using refractive index modification.

We present a novel technique to tune the plasmon resonance of metal-coated silicon tips in the whole visible region without altering the tips original sharpness. The technique involves modification of the refractive index of silicon probe by thermal oxidization. Lowering the refractive index of silicon tip coated with metal shift the PRW of the metallic layer to shorter wavelength. Numerical simulation using FDTD agrees well with the empirical results. This novel technique is very useful in tip-enhanced Raman spectroscopy studies of various materials because plasmon resonance can tuned to a specific Raman excitation wavelength.

Highly efficient tip-enhanced Raman spectroscopy and microscopy of strained silicon.

We present a versatile tip-enhanced Raman spectroscopy (TERS) system that permits efficient illumination and detection of optical properties in the visible range to obtain high signal-to-noise Raman signals from surfaces and interfaces of materials using an edge filter. The cutoff wavelength of the edge filter is tuned by changing the angle of incident beam to deliver high incident power and effectively collect scattered near-field signals for nanoscopic investigation in depolarized TERS configuration. The dynamic design of the instrument provides a unique combination of features that allows us to perform reflection or transmission mode TERS to cover both opaque and transparent samples. A detailed description of improvements of TERS was carried out on a thin strained silicon surface layer. The utilization of an edge filter for shorter collection time, specialized tip for higher field enhancement and for elimination of Raman signal from the tip, shorter wavelength, sample orientation relative to probing polarization, and depolarized configuration for higher contrast Raman signal is discussed.

In-line interferometer for direction-sensitive displacement measurements by optical feedback detection.

We demonstrate a compact in-line interferometer for direction-sensitive displacement measurement by optical feedback detection with a semiconductor laser (SL) light source. Two reflected beams from a semitransparent reference mirror and a reflecting test object interfere in the SL medium, causing a variation in its output power. The reference mirror is located between the SL output facet and the test object. The performance of the interferometer is investigated numerically and experimentally to determine its optimal operating conditions. We have verified the operating conditions where the behavior of the SL output power profile could indicate accurately the displacement magnitude and direction of the moving test object. The profile behavior is robust against variations in optical feedback and scale of the interferometer configuration.

Rapid subsurface detection of nanoscale defects in live microprocessors by functional infrared emission spectral microscopy.

We demonstrate the rapid and nondestructive detection of subsurface nanometer-size defects in 90 nm technology live microprocessors with a new technique called functional infrared emission spectral microscopy. Broken, leaky, and good transistors with similar photoemission images are identified from each other by their different emission spectra that are calculated as linear combinations of weighted basis spectra. The basis spectra are derived from a spectral library by principal component analysis. Leaky transistors do not exhibit apparent morphological damage and are undetectable by optical or scanning probe microscopy alone. The emission signals from two or more transistors combined incoherently, and defect detection is primarily limited by the signal-to-noise ratio of the detected spectrum and not by the separation distance of neighboring transistors.