At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures.

As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp heterointerfaces has been challenging owing to peculiarities of the commonly used vapor-liquid-solid growth mode. Here, the grading of Al across GaAs/AlxGa1-xAs/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system. A pulsed growth mode ensures precise control of the growth mechanisms even at low temperatures, while a semiempirical thermodynamic model is derived to fit the experimental Al-content profiles and quantitatively describe the dependences of the interfacial sharpness on the growth temperature, the nanowire radius, and the Al content. Finally, symmetrical Al profiles with interfacial widths of 2-3 atomic planes, at the limit of the measurement accuracy, are obtained, outperforming even equivalent thin-film heterostructures. The proposed method enables the development of advanced heterostructure schemes for a more effective utilization of the nanowire platform; moreover, it is considered expandable to other material systems and nanostructure types.

A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on silicon for sub-Poissonian length distributions.

We demonstrate a simple route to grow ensembles of self-catalyzed GaAs nanowires with a remarkably narrow statistical distribution of lengths on natively oxidized Si(111) substrates. The fitting of the nanowire length distribution (LD) with a theoretical model reveals that the key requirements for narrow LDs are the synchronized nucleation of all nanowires on the substrate and the absence of beam shadowing from adjacent nanowires. Both requirements are fulfilled by controlling the size and number density of the openings in SiO x , where the nanowires nucleate. This is achieved by using a pre-growth treatment of the substrate with Ga droplets and two annealing cycles. The narrowest nanowire LDs are markedly sub-Poissonian, which validates the theoretical predictions about temporally anti-correlated nucleation events in individual nanowires, the so-called nucleation antibunching. Finally, the reproducibility of sub-Poissonian LDs attests the reliability of our growth method.

Assembly Behavior of Organically Interlinked Gold Nanoparticle Composite Films: A Quartz Crystal Microbalance Investigation.

Thin films based on dodecylamine stabilized gold nanoparticles interlinked with different organic molecules are prepared by automatic layer-by-layer self-assembly in a microfluidic quartz crystal microbalance (QCM) cell, to obtain an in situ insight on the film formation by ligand/linker exchange reactions. The influence of interlinking functional groups and the length of the organic linker molecule on the assembly behavior is investigated. Alkyldithiols with different lengths are compared to alkyldiamines and alkylbisdithiocarbamates with a C8 alkylic molecular backbone. The stepwise layer-by-layer assembly occurs independently of the linker molecule, while the largest frequency changes always correspond to the gold nanoparticle step. During the solvent rinsing and ligand/linker exchange reaction step, the frequency is almost constant with slight increases or decreases dependent on the molar mass of the linker compared to the exchanged ligand. The assembly efficiency is higher for shorter molecules and for molecules with stronger interacting functional groups. The densities of the composite films are calculated from QCM data and independent thickness measurements. They reflect the higher fraction of organic material in the films comprising longer organic linkers. The plasmon resonance band of the gold nanoparticles in the final assemblies is measured with UV/vis spectroscopy. Band positions in films prepared from dithiols and diamines of comparable lengths are very similar, while the spectrum of the bisdithiocarbamate film exhibits a distinct blue-shift. This observation is explained by the longer molecular structure of the linker due to a larger binding group, in conjunction with a delocalization of particle charge on the organic molecule. Obtained results play an essential role in the understanding of thin film layer-by-layer self-assembly processes, and enable the formation of new gold nanoparticle networks with organic diamine and bisdithiocarbamate molecules.

Droplet-Confined Alternate Pulsed Epitaxy of GaAs Nanowires on Si Substrates down to CMOS-Compatible Temperatures.

We introduce droplet-confined alternate pulsed epitaxy for the self-catalyzed growth of GaAs nanowires on Si(111) substrates in the temperature range from 550 °C down to 450 °C. This unconventional growth mode is a modification of the migration-enhanced epitaxy, where alternating pulses of Ga and As4 are employed instead of a continuous supply. The enhancement of the diffusion length of Ga adatoms on the {11̅0} nanowire sidewalls allows for their targeted delivery to the Ga droplets at the top of the nanowires and, thus, for a highly directional growth along the nanowire axis even at temperatures as low as 450 °C. We demonstrate that the axial growth can be simply and abruptly interrupted at any time without the formation of any defects, whereas the growth rate can be controlled with high accuracy down to the monolayer scale, being limited only by the stochastic nature of nucleation. Taking advantage of these unique possibilities, we were able to probe and describe quantitatively the population dynamics of As inside the Ga droplets in specially designed experiments. After all, our growth method combines all necessary elements for precise growth control, in-depth investigation of the growth mechanisms and compatibility with fully processed Si-CMOS substrates.