Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors.

Lead sulfide colloidal quantum dots (PbS CQDs) are promising optoelectronic materials due to their unique properties, such as tunable band gap and strong absorption, which are of immense interest for application in photodetectors and solar cells. However, the tunable band gap of PbS CQDs would only cover visible short-wave infrared; the ability to detect longer wavelengths, such as mid- and long-wave infrared, is limited because they are restricted by the band gap of the bulk material. In this paper, a novel photodetector based on the synergistic effect of PbS CQDs and bismuth telluride (Bi2Te3) was developed for the detection of a mid-wave infrared band at room temperature. The device demonstrated good performance in the visible-near infrared band (i.e., between 660 and 850 nm) with detectivity of 1.6 × 1010 Jones at room temperature. It also exhibited photoelectric response in the mid-wave infrared band (i.e., between 4.6 and 5.1 µm). The facile fabrication process and excellent performance (with a response of up to 5.1 µm) of the hybrid Bi2Te3/PbS CQDS photodetector are highly attractive for many important applications that require high sensitivity and broadband light detection.

High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector.

The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heterojunction UV photodetector to enhance the rectification characteristics and therefore the device performance. The device, which consists of nickel oxide (NiO) and zinc oxide (ZnO) sandwiching an ultrathin dielectric layer of titanium dioxide (TiO2), was prepared by radio frequency magnetron sputtering (RFMS). After annealing, the NiO/TiO2/ZnO UV photodetector exhibited a rectification ratio of 104 under UV irradiation of 365 nm at zero bias. The device also demonstrated a high responsivity of 291 A/W and a detectivity of 6.9 × 1011 Jones at +2 V bias. Such a device structure provides a promising future for metal oxide-based heterojunction UV photodetectors in a wide range of applications.

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures.

Quantum dots have found significant applications in photoelectric detectors due to their unique electronic and optical properties, such as tunable bandgap. Recently, colloidal quantum dots (CQDs) have attracted much interest because of the ease of controlling the dot size and low production cost. In this paper, a high-performance ZnO/PbS heterojunction photodetector was fabricated by spin-coating PbS CQDs onto the surface of a hydrothermally grown vertical array of ZnO nanowires (NWs) on an indium tin oxide (ITO) substrate. Under 940 nm near-infrared light illumination, the device demonstrated a responsivity and detectivity of ~3.9 × 104 A/W and ~9.4 × 1013 Jones, respectively. The excellent performances and low cost of this nanocomposite-based photodetector show that it has the potential for widespread applications ranging from medical diagnosis to environmental monitoring.

Reusing Waste Coffee Grounds as Electrode Materials: Recent Advances and Future Opportunities.

Coffee industry produces more than eight million tons of waste coffee grounds (WCG) annually. These WCG contain caffeine, tannins, and polyphenols and can be of great environmental concern if not properly disposed of. On the other hand, components of WCG are mainly macromolecular cellulose and lignocellulose, which can be utilized as cheap carbon precursors. Accordingly, various forms of carbon materials have been reportedly synthesized from WCG, including activated carbon, mesoporous carbon, carbon nanosheets, carbon nanotubes, graphene sheet fibers (i.e., graphenated carbon nanotubes), and particle-like graphene. Upcycling of various biomass and/or waste into value-added functional materials is of growing significance to offer more sustainable solutions and enable circular economy. In this context, this review offers timely insight on the recent advances of WCG derived carbon as value-added electrode materials. As electrodes, they have shown to possess excellent electrochemical properties and found applications in capacitor/supercapacitor, batteries, electrochemical sensors, owing to their low cost, high electrical conductivity, polarization, and chemical stability. Collectively, these efforts could represent an environmentally friendly and circular economy approach, which could not only help solve the food waste issue, but also generate high performance carbon-based materials for many electrochemical applications.

Fast-Response Photodetector Based on Hybrid Bi2Te3/PbS Colloidal Quantum Dots.

Colloidal quantum dots (CQDs) as photodetector materials have attracted much attention in recent years due to their tunable energy bands, low cost, and solution processability. However, their intrinsically low carrier mobility and three-dimensional (3D) confinement of charges are unsuitable for use in fast-response and highly sensitive photodetectors, hence greatly restricting their application in many fields. Currently, 3D topological insulators, such as bismuth telluride (Bi2Te3), have been employed in high-speed broadband photodetectors due to their narrow bulk bandgap, high carrier mobility, and strong light absorption. In this work, the advantages of topological insulators and CQDs were realized by developing a hybrid Bi2Te3/PbS CQDs photodetector that exhibited a maximum responsivity and detectivity of 18 A/W and 2.1 × 1011 Jones, respectively, with a rise time of 128 µs at 660 nm light illumination. The results indicate that such a photodetector has potential application in the field of fast-response and large-scale integrated optoelectronic devices.

Broadband photodetector based on SnTe nanofilm/n-Ge heterostructure.

Combining novel two-dimensional materials with traditional semiconductors to form heterostructures for photoelectric detection have attracted great attention due to their excellent photoelectric properties. In this study, we reported the formation of a heterostructure comprising of tin telluride (SnTe) and germanium (Ge) by a simple and efficient one-step magnetron sputtering technique. A photodetector was fabricated by sputtering a nanofilm of SnTe on to a pre-masked n-Ge substrate.J-Vmeasurements obtained from the SnTe/n-Ge photodetector demonstrated diode and photovoltaic characteristics in the visible to near-infrared (NIR) band (i.e. 400-2050 nm). Under NIR illumination at 850 nm with an optical power density of 13.81 mW cm-2, the SnTe/n-Ge photodetector exhibited a small open-circuit voltage of 0.05 V. It also attained a high responsivity (R) and detectivity (D*) of 617.34 mA W-1(at bias voltage of -0.5 V) and 2.33 × 1011cmHz1/2W-1(at zero bias), respectively. Therefore, SnTe nanofilm/n-Ge heterostructure is highly suitable for used as low-power broadband photodetector due to its excellent performances and simple device configuration.

Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current.

Photodetectors are receiving increasing attention because of their widely important applications. Therefore, developing broadband high-performance photodetectors using new materials that can function at room temperature has become increasingly important. As a functional material, tin telluride (SnTe), has been widely studied as a thermoelectric material. Furthermore, because of its narrow bandgap, it can be used as a novel infrared photodetector material. In this study, a large-area SnTe nanofilm with controllable thickness was deposited onto a quartz substrate using magnetron sputtering and was used to fabricate a photodetector. The device exhibited a photoelectric response over a broad spectral range of 400-1050 nm. In the near-infrared band of 940 nm, the detectivity (D*) and responsivity (R) of the photodetector were 3.46×1011 cmHz1/2w-1 and 1.71 A/W, respectively, at an optical power density of 0.2 mWcm-2. As the thickness of the SnTe nanofilm increased, a transition from semiconducting to metallic properties was experimentally observed for the first time. The large-area (2.5cm × 2.5cm) high-performance nanofilms show important potential for application in infrared focal plane array (FPA) detectors.

Preparation of Si quantum dots by phase transition with controlled annealing.

Silicon quantum dots (Si-QDs) are excellent luminescent material due to its unique optoelectronic properties and have huge application potential in the field of photodetection. Recently, there has been much research interests in developing low-cost, facile and environmentally friendly methods to prepare the nanomaterials in addition to yielding excellent performances. In this article, we developed a novel preparation method of producing Si-QDs film based on carbon-silicon composite. The film was synthesized by co-sputtering using magnetron sputtering technique and studied at different annealing temperatures. Upon annealing, the film was transformed from an amorphous state to a crystalline state leading to Si-QDs precipitation, which can be observed at a low temperature of 600 °C. A Si-QDs thin film/n-Si photodetector was then prepared and characterized. The device exhibited a high specific detection rate (D*) of 1.246 × 1012cm Hz1/2W-1under 940 nm (1.1 mW cm-2) infrared radiation at 5 V bias. It also demonstrated good responsiveness and stability.

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction.

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.

Vertically Aligned Graphene Prepared by Photonic Annealing for Ultrasensitive Biosensors.

Graphene exhibits excellent physical, electronic, and chemical properties that are highly desirable for biosensing applications. However, most graphene biosensors are based on graphene lying flat on a substrate and therefore do not utilize its maximum specific surface area for ultrasensitive detection. Herein, we report the novel use of photonic annealing on a flexographically printed graphene-ethyl cellulose composite to produce vertically aligned graphene (VAG) biosensors for ultrasensitive detection of algal toxins in drinking water. These VAG structures, which maximized the specific surface area of graphene, were formed by partial removal of the polymeric binder upon applying intense pulsed light on the printed graphene. A label-free and low-cost VAG biosensor based on a non-faradaic electrochemical impedance spectroscopy technique was fabricated. The biosensor exhibited a limit of detection of 1.2 ng/L for microcystin-LR in local tap water. Such an ultrasensitive VAG biosensor is suitable for low-cost mass production using an integrated roll-to-roll flexographic printing with rapid photonic annealing technique.

High performance broadband photodetectors based on Sb2Te3/n-Si heterostructure.

With the rapid development of optoelectronic devices, photodetectors have triggered unprecedented promise in the field of optical communication, environmental monitoring, biological imaging, chemical sensing. At the same time, there is a higher requirement for photodetectors. It is still a huge challenge for photodetectors that possess excellent performance, low cost and broad range photoresponse from ultraviolet to infrared. In this work, a facile, low cost growth of Sb2Te3 thin film using magnetic sputtering was performed. After rapid annealing treatment, the crystallinity of the thin film was transformed from amorphous to polycrystalline. Ultraviolet-visible-infrared absorption study of the thin film revealed broad absorption range, which is ideal for use in broadband photodetectors. Such photodetectors can find many important applications in communication, data security, environmental monitoring and defense technology etc. A prototype photodetector, consisting of Sb2Te3/n-Si heterostructure, was produced and characterized. The device demonstrated a significant photoelectric response at a broad spectral range of between 250 and 2400 nm. The maximum responsivity and detectivity of the device were 270 A W-1 and 1.28 × 1013 Jones, respectively, under 2400 nm illumination. Therefore, the results showed the potential use of Sb2Te3 thin film in developing high performance broadband photodetectors.

High-Performance Deep Ultraviolet Photodetector Based on NiO/ß-Ga2O3 Heterojunction.

Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/ß-Ga2O3 heterojunction was developed and investigated. The ß-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ([Formula: see text] 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW-1 under a 245-nm illumination (27 µWcm-2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W-1, which was attributed to the p-NiO/n-ß-Ga2O3 heterojunction.

Tantalum disulfide quantum dots: preparation, structure, and properties.

Tantalum disulfide (TaS2) two-dimensional film material has attracted wide attention due to its unique optical and electrical properties. In this work, we report the preparation of 1 T-TaS2 quantum dots (1 T-TaS2 QDs) by top-down method. Herein, we prepared the TaS2 QDs having a monodisperse grain size of around 3 nm by an effective ultrasonic liquid phase exfoliation method. Optical studies using UV-Vis, PL, and PLE techniques on the as-prepared TaS2 QDs exhibited ultraviolet absorption at 283 nm. Furthermore, we found that dimension reduction of TaS2 has led to a modification of the band gap, namely a transition from indirect to direct band gap, which is explained using first-principle calculations. By using quinine as reference, the fluorescence quantum yield is 45.6%. Therefore, our results suggest TaS2 QDs have unique and extraordinary optical properties. Moreover, the low-cost, facile method of producing high quality TaS2 QDs in this work is ideal for mass production to ensure commercial viability of devices based on this material. TaS2 quantum dots having a monodisperse grain size of around 3 nm have been prepared by an ultrasonic liquid phase exfoliation method, it has been found that the dimension reduction of TaS2 has led to a transition from indirect to direct band gap that results in the unique and extraordinary optical properties (PL QY: 45.6%).

In2S3 Quantum Dots: Preparation, Properties and Optoelectronic Application.

Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In2S3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In2S3 QDs with excellent crystal quality. The properties of the as-prepared In2S3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 1013 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.

Recent Advances on Electrochemical Sensors for the Detection of Organic Disinfection Byproducts in Water.

Irreversible organ damage or even death frequently occurs when humans or animals unknowingly drink contaminated water. Therefore, in many countries drinking water is disinfected to ensure removal of harmful pathogens from drinking water. If upstream water treatment prior to disinfection is not adequate, disinfection byproducts (DBPs) can be formed. DBPs can exist as wide variety of compounds, but up until now, only several typical compounds have drinking water standards attributed to them. However, it is apparent that the range of DBPs present in water can comprise hundreds of compounds, some of which are at high enough concentrations to be toxic or potentially carcinogenic. Hence, it becomes increasingly significant and urgent to develop an accessible, affordable, and durable sensing platform for a broader range and more sensitive detection of DBPs. Compared with well-established laboratory detection techniques, electrochemical sensing has been identified as a promising alternative that will provide rapid, affordable, and sensitive DBP monitoring in remote water sources. Therefore, this Review covers current state-of-the-art development (within the past decade) in electrochemical sensing to detect organic DBPs in water, which covered three major aspects: (1) recognition mechanism, (2) electrodes with signal amplification, and (3) signal read-out techniques. Moreover, comprehensive quality assessments on electrochemical biosensors, including linear detection range, limit of detection (LoD) and recovery, have also been summarized.

Uniform sensing layer of immiscible enzyme-mediator compounds developed via a spray aerosol mixing technique towards low cost minimally invasive microneedle continuous glucose monitoring devices.

In this study, a uniformly mixed sensing layer of typically immiscible compounds, such as tetrathiafulvalene (TTF) mediator and glucose oxidase (GOx) enzyme, was developed using a simultaneous spray deposition technique ideal for mass production of glucose sensors at low cost while exhibiting enhanced amperometric response. For comparison, the sensors were fabricated via three different methods: conventional drop-cast of TTF and GOx compounds in subsequent layers (DL), spray deposition of the compounds in subsequent layers (SL), and spray mixing of the compounds as one uniform layer (SM). Uniformity of the sensing layers was investigated via Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDX) techniques demonstrating an even distribution of the TTF and GOx throughout the sensing layer for the SM sensors. The amperometric studies showed a significantly larger maximum current response, Imax and sensitivity for the SM sensors as compared to the SL and DL sensors. The significantly better performance of the SM sensors correlated well with the even distribution of TTF and GOx throughout the sensing layer, resulting in enhanced electron transfer and redox reaction between GOx and TTF. The SM spray technique was then applied to deposit a uniformly mixed sensing layer on to 3D microneedle arrays to provide minimally invasive continuous glucose monitoring (CGM). In-vivo studies showed amperometric response from the microneedle CGM device was compatible to changes in blood glucose levels measured via the standard finger prick tests. Importantly, the deposition technique is suitable for mass production of the microneedle CGM at very low cost.

Electrochemical Biosensing of Algal Toxins in Water: The Current State-of-the-Art.

Due to increasing stringency of water legislation and extreme consequences that failure to detect some contaminants in water can involve, there has been a strong interest in developing electrochemical biosensors for algal toxin detection during the past decade, evidenced by literature increasing from 2 journal papers pre-2009 to 24 between 2009 and 2018. In this context, this review has summarized recent progress of successful algal toxin detection in water using electrochemical biosensing techniques. Satisfactory detection recoveries using real environmental water samples and good sensor repeatability and reproducibility have been achieved, along with some excellent limit-of-detection (LOD) reported. Recent electrochemical biosensor literature in algal toxin detection is compared and discussed to cover three major design components: (1) biorecognition elements, (2) electrochemical read-out techniques, and (3) sensor electrodes and signal amplification strategy. The recent development of electrochemical biosensors has provided one more step further toward quick in situ detection of algal toxins in the contamination point of the water source. In the end, we have also critically reviewed the current challenges and research opportunities regarding electrochemical biosensors for algal toxin detection that need to be addressed before they attain commercial viability.

Nanotextured Surface on Flexographic Printed ZnO Thin Films for Low-Cost Non-Faradaic Biosensors.

In this work, the formation of a nanotextured surface is reported on flexographic printed zinc oxide thin films which provide an excellent platform for low-cost, highly sensitive biosensing applications. The ability to produce nanotextured surfaces using a high-throughput, roll-to-roll production method directly from precursor ink without any complicated processes is commercially attractive for biosensors that are suitable for large-scale screening of diseases at low cost. The zinc oxide thin film was formed by printing a zinc acetate precursor ink solution and annealing at 300 °C. An intricate nanotexturing of the film surface was achieved through 150 °C drying process between multiple prints. These surface nanostructures were found to be in the range of 100 to 700 nm in length with a width of 58 ± 18 nm and a height of between 20 and 60 nm. Such structures significantly increase the surface area to volume ratio of the biosensing material, which is essential to high sensitivity detection of diseases. Nonfaradaic electrochemical impedance spectroscopy measurements were carried out to detect the pp65-antigen of the human cytomegalovirus using the printed device, which has a low limit of detection of 5 pg/mL.

Direct patterning of gold nanoparticles using flexographic printing for biosensing applications.

In this paper, we have presented the use of flexographic printing techniques in the selective patterning of gold nanoparticles (AuNPs) onto a substrate. Highly uniform coverage of AuNPs was selectively patterned on the substrate surface, which was subsequently used in the development of a glucose sensor. These AuNPs provide a biocompatible site for the attachment of enzymes and offer high sensitivity in the detection of glucose due to their large surface to volume ratio. The average size of the printed AuNPs is less than 60 nm. Glucose sensing tests were performed using printed carbon-AuNP electrodes functionalized with glucose oxidase (GOx). The results showed a high sensitivity of 5.52 µA mM(-1) cm(-2) with a detection limit of 26 µM. We have demonstrated the fabrication of AuNP-based biosensors using flexographic printing, which is ideal for low-cost, high-volume production of the devices.

Photoresponse of polyaniline-functionalized graphene quantum dots.

Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current-voltage (I-V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of ±1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics.