Manipulation of the Topological Ferromagnetic State in a Weyl Semimetal by Spin-Orbit Torque.

Magnetic Weyl semimetals (MWSMs) exhibit unconventional transport phenomena, such as large anomalous Hall (and Nernst) effects, which are absent in spatial inversion asymmetry WSMs. Compared with its nonmagnetic counterpart, the magnetic state of a MWSM provides an alternative way for the modulation of topology. Spin-orbit torque (SOT), as an effective means of electrically controlling the magnetic states of ferromagnets, may be used to manipulate the topological magnetic states of MWSMs. Here we confirm the MWSM state of high-quality Co2MnGa film by systematically investigating the transport measurements and demonstrating that the magnetization and topology of Co2MnGa can be electrically manipulated. The electrical and magnetic optical measurements further reveal that the current-induced SOT switches the topological magnetic state in a 180-degree manner by applying positive/negative current pulses and in a 90-degree manner by alternately applying two orthogonal current pulses. This work opens up more opportunities for spintronic applications based on topological materials.

Efficient Spin-Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer.

Electrically manipulating magnetic moments by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy MnxPtyGe (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 1010Am-2, as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analyzed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic field-free switching of magnetization is observed when the electric current flows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efficient magnetoresistive random access memory devices and other spintronic applications.

Thermally Processed Quantum-Dot Polypropylene Composite Color Converter Film for Displays.

Quantum dots (QDs) have attracted much attention as one of the most promising candidates for next-generation display materials. However, stability is still a big challenge for QDs. Herein, we encapsulated QDs in a thermoplastic polypropylene (PP) matrix by thermal processing technology to prepare a stabler color conversion film for the first time. Thermal processing technology expands the packaging materials of QDs from traditional soluble polymers to thermoplastic polymers such as PP with easy processing and a low cost. We showed that the QDs in the PP film exhibited longer-lasting stability than the traditional PMMA film. After 216 h of blue light accelerated aging test, the QDs maintained more than 90% of the initial performance in the PP film but dropped to less than 25% in the PMMA film. Moreover, the reasons for the improved stability have been further discussed. It was found that the PP-H film not only possessed better barriers to moisture and oxygen, but the absence of ester groups also led to a milder environment around the QDs. The results show that ester groups have stronger electronegativity and easily cause the ligands on the surface of QDs to fall off, which lead to performance degradation.

Spin-Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film.

Current-induced spin-orbit torque (SOT) switching of magnetization has attracted great interest due to its potential application in magnetic memory devices, which offer low-energy consumption and high-speed writing. However, most of the SOT studies on perpendicularly magnetized anisotropy (PMA) magnets have been limited to heterostructures with interfacial PMA and poor thermal stability. Here, we experimentally demonstrate a SOT magnetization switching for a ferrimagnetic D022-Mn3Ge film with high bulk PMA and robust thermal stability factor under a critical current density of 6.6 × 1011 A m-2 through the spin Hall effect of an adjacent capping Pt and a buffer Cr layer. A large effective damping-like SOT efficiency of 2.37 mT/1010 A m-2 is determined using harmonic measurements in the structure. The effect of the double-spin source layers and the negative-exchange interaction of the ferrimagnet may explain the large SOT efficiency and the manifested magnetization switching of Mn3Ge. Our findings demonstrate that D022-Mn3Ge is a promising candidate for application in high-density SOT magnetic random-access memory devices.

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator.

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque-induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques.

Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped topological insulator at 1.9 K. Here we directly show giant spin-orbit torque-driven magnetization switching in a Bi2Se3/NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of ~1-1.75 in the thin Bi2Se3 films, where the topological surface states are dominant. In addition, we find the current density required for the magnetization switching is extremely low, ~6 × 105 A cm-2, which is one to two orders of magnitude smaller than that with heavy metals. Our demonstration of room temperature magnetization switching of a conventional 3d ferromagnet using Bi2Se3 may lead to potential innovations in topological insulator-based spintronic applications.

Gate-tuned quantum oscillations of topological surface states in ß-Ag2Te.

We report the strong experimental evidence of the existence of topological surface states with large electric field tunability and mobility in ß-Ag2Te. Pronounced 2D Shubnikov-de Haas oscillations have been observed in ß-Ag2Te nanoplates. A Berry phase is determined to be near π using the Landau level fan diagram for a relatively wide nanoplate while the largest electric field ambipolar effect in topological insulator so far (~2500%) is observed in a narrow nanoplate. The π Berry phase and the evolution of quantum oscillations with gate voltage (Vg) in the nanoplates strongly indicate the presence of topological surface states in ß-Ag2Te. Moreover, the mobility of the narrow Ag2Te nanoplate is about several thousand cm(2)s(-1)V(-1). Our results suggest that ß-Ag2Te has the potential to become an important material in the investigation of topological insulators.

Spin-polarized wide electron slabs in functionally graded polar oxide heterostructures.

We report on the high mobility wide electron slabs with enhanced correlation effects by tailoring the polarization effects in a functionally graded ZnMgO/ZnO heterostructures. The characteristics of three-dimensional (3D) spreading electrons are evidenced by the capacitance-voltage profiling and the quantization of 3D Fermi surface in magneto-transport measurements. Despite the weak spin-orbit interaction, such electron slabs are spin-polarized with a large zero-field spin splitting energy, which is induced by the carrier-mediated ferromagnetism. Our results suggest that the vast majority of electrons are localized at the surface magnetic moment which does not allow spin manipulations, and only in the region visited by the itinerant carriers that the ferromagnetic exchange interactions via coupling to the surface local moments contribute to the spin transport. The host ferromagnetism is likely due to the formation of Zn cation vacancies on the surface regime induced by the stabilization mechanism and strain-relaxation in ZnMgO polar ionic surface.