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1.
Artigo em Inglês | MEDLINE | ID: mdl-24483583

RESUMO

To reduce the rapidly growing computational cost of the dual-fermion lattice calculation with increasing system size, we introduce two embedding schemes. One is the real fermion embedding, and the other is the dual-fermion embedding. Our numerical tests show that the real fermion and dual-fermion embedding approaches converge to essentially the same result. The application on the Anderson disorder and Hubbard models shows that these embedding algorithms converge more quickly with system size as compared to the conventional dual-fermion method, for the calculation of both single- and two-particle quantities.

2.
Phys Rev Lett ; 107(2): 026401, 2011 Jul 08.
Artigo em Inglês | MEDLINE | ID: mdl-21797625

RESUMO

We perform a systematic study of incoherent transport in the high temperature crossover region of the half filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling of the form ρ(T, δU) = ρ(c)(T)f(T/T0(δU)), with T0(δU) ~ |δU|(zν), and ρ(c)(T) ~ T. The corresponding ß function displays a "strong coupling" form ß ~ ln(ρ(c)/ρ), reflecting the peculiar mirror symmetry of the scaling curves. This behavior, which is surprisingly similar to some experimental findings, indicates that Mott quantum criticality may be acting as the fundamental mechanism behind the unusual transport phenomena in many systems near the metal-insulator transition.

3.
Phys Rev Lett ; 106(18): 186402, 2011 May 06.
Artigo em Inglês | MEDLINE | ID: mdl-21635108

RESUMO

In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality precludes global phase separation, it may lead to various inhomogeneous states and dramatically affect transport. Here we theoretically predict the precise experimental signatures of such phase separation-driven metal-insulator transitions. We show that anomalous transport is expected in an intermediate regime around the transition, displaying very strong temperature and magnetic field dependence but very weak density dependence. Our predictions find striking agreement with recent experiments on Mn-doped CdTe quantum wells, a system where we identify the microscopic origin for intrinsic phase separation.

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