Influence of dielectric layer thickness on charge injection, accumulation and transport phenomena in thin silicon oxynitride layers: a nanoscale study.

Charge injection and retention in thin dielectric layers remain critical issues due to the great number of failure mechanisms they inflict. Achieving a better understanding and control of charge injection, trapping and transport phenomena in thin dielectric films is of high priority aiming at increasing lifetime and improving reliability of dielectric parts in electronic and electrical devices. Thermal silica is an excellent dielectric but for many of the current technological developments more flexible processes are required for synthesizing high quality dielectric materials such as amorphous silicon oxynitride layers using plasma methods. In this article, the studied dielectric layers are plasma deposited SiO x N y . Independently on the layer thickness, they are structurally identical: optically transparent, having the same refractive index, equal to the one of thermal silica. Influence of the dielectric film thickness on charging phenomena in such layers is investigated at nanoscale using Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy. The main effect of the dielectric film thickness variation concerns the charge flow in the layer during the charge injection step. According to the SiO x N y layer thickness two distinct trends of the measured surface potential and current are found, thus defining ultrathin (up to 15 nm thickness) and thin (15-150 nm thickness) layers. Nevertheless, analyses of KPFM surface potential measurements associated with results from finite element modeling of the structures show that the dielectric layer thickness has weak influence on the amount of injected charge and on the decay dynamics, meaning that pretty homogeneous layers can be processed. The charge penetration depth in such dielectric layers is evaluated to 10 nm regardless the dielectric thickness.

Methodology for extraction of space charge density profiles at nanoscale from Kelvin probe force microscopy measurements.

To understand the physical phenomena occurring at metal/dielectric interfaces, determination of the charge density profile at nanoscale is crucial. To deal with this issue, charges were injected applying a DC voltage on lateral Al-electrodes embedded in a SiN x thin dielectric layer. The surface potential induced by the injected charges was probed by Kelvin probe force microscopy (KPFM). It was found that the KPFM frequency mode is a better adapted method to probe accurately the charge profile. To extract the charge density profile from the surface potential two numerical approaches based on the solution to Poisson's equation for electrostatics were investigated: the second derivative model method, already reported in the literature, and a new 2D method based on the finite element method (FEM). Results highlight that the FEM is more robust to noise or artifacts in the case of a non-flat initial surface potential. Moreover, according to theoretical study the FEM appears to be a good candidate for determining charge density in dielectric films with thicknesses in the range from 10 nm to 10 µm. By applying this method, the charge density profile was determined at nanoscale, highlighting that the charge cloud remains close to the interface.

Charge injection in thin dielectric layers by atomic force microscopy: influence of geometry and material work function of the AFM tip on the injection process.

Charge injection and retention in thin dielectric layers remain critical issues for the reliability of many electronic devices because of their association with a large number of failure mechanisms. To overcome this drawback, a deep understanding of the mechanisms leading to charge injection close to the injection area is needed. Even though the charge injection is extensively studied and reported in the literature to characterize the charge storage capability of dielectric materials, questions about charge injection mechanisms when using atomic force microscopy (AFM) remain open. In this paper, a thorough study of charge injection by using AFM in thin plasma-processed amorphous silicon oxynitride layers with properties close to that of thermal silica layers is presented. The study considers the impact of applied voltage polarity, work function of the AFM tip coating and tip curvature radius. A simple theoretical model was developed and used to analyze the obtained experimental results. The electric field distribution is computed as a function of tip geometry. The obtained experimental results highlight that after injection in the dielectric layer the charge lateral spreading is mainly controlled by the radial electric field component independently of the carrier polarity. The injected charge density is influenced by the nature of electrode metal coating (work function) and its geometry (tip curvature radius). The electron injection is mainly ruled by the Schottky injection barrier through the field electron emission mechanism enhanced by thermionic electron emission. The hole injection mechanism seems to differ from the electron one depending on the work function of the metal coating. Based on the performed analysis, it is suggested that for hole injection by AFM, pinning of the metal Fermi level with the metal-induced gap states in the studied silicon oxynitride layers starts playing a role in the injection mechanisms.

Dielectric charging by AFM in tip-to-sample space mode: overview and challenges in revealing the appropriate mechanisms.

The study of charge distribution on the surface and in the bulk of dielectrics is of great scientific interest because of the information gained on the storage and transport properties of the medium. Nevertheless, the processes at the nanoscale level remain out of the scope of the commonly used diagnostic methods. Atomic force microscopy (AFM) is currently applied for both injection and imaging of charges on dielectric thin films at the nanoscale level to answer the increasing demand for characterization of miniaturized components used in microelectronics, telecommunications, electrophotography, electrets, etc. However, the mechanisms for dielectric charging by AFM are not well documented, and an analysis of the literature shows that inappropriate mechanisms are sometimes presented. It is shown here that corona discharge, frequently pointed out as a likely mechanism for dielectric charging by AFM in tip-to-sample space mode, cannot develop in such small distances. Furthermore, a review of different mechanisms surmised to be at the origin of dielectric charging at the nanoscale level is offered. Field electron emission enhanced by thermionic emission is identified as a likely mechanism for dielectric charging at the nanoscale level. Experimental validation of this mechanism is obtained for typical electric field strengths in AFM.