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1.
Observation of midgap interface states in buried metal/GaAs junctions.
Qi J; Angerer W; Yeganeh MS; Yodh AG; Theis WM.
Phys Rev Lett ; 75(17): 3174-3177, 1995 Oct 23.
Artigo em Inglês | MEDLINE | ID: mdl-10059513
2.
Transverse diffusion of minority carriers confined near the GaAs surface plane.
Qi J; Angerer W; Yeganeh MS; Yodh AG; Theis WM.
Phys Rev B Condens Matter ; 51(19): 13533-13537, 1995 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9978156
3.
Depletion-electric-field-induced changes in second-harmonic generation from GaAs.
Qi J; Yeganeh MS; Koltover I; Yodh AG; Theis WM.
Phys Rev Lett ; 71(4): 633-636, 1993 Jul 26.
Artigo em Inglês | MEDLINE | ID: mdl-10055325
4.
Determination of the binding energy of excitons to neutral donors located at the center or edge of the well or at the center of the barrier in AlxGa1-xAs/GaAs multiple-quantum-well structures.
Reynolds DC; Leak CE; Bajaj KK; Stutz CE; Jones RL; Evans KR; Yu PW; Theis WM.
Phys Rev B Condens Matter ; 40(9): 6210-6217, 1989 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9992689
5.
Binding energies of biexcitons in AlxGa1-xAs/GaAs multiple quantum wells.
Reynolds DC; Bajaj KK; Stutz CE; Jones RL; Theis WM; Yu PW; Evans KR.
Phys Rev B Condens Matter ; 40(5): 3340-3343, 1989 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-9992275
6.
Extrinsic contributions to photoreflectance of AlxGa1-xAs/GaAs quantum wells: An investigation of the "donor-related" feature.
Theis WM; Sanders GD; Evans KR; Liou LL; Leak CE; Bajaj KK; Stutz CE; Jones RL; Chang YC.
Phys Rev B Condens Matter ; 39(15): 11038-11043, 1989 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9947918
7.
Excited states of the light- and heavy-hole free excitons observed in photoreflectance.
Theis WM; Sanders GD; Leak CE; Reynolds DC; Chang YC; Alavi K; Colvard C; Shidlovsky I.
Phys Rev B Condens Matter ; 39(2): 1442-1445, 1989 Jan 15.
Artigo em Inglês | MEDLINE | ID: mdl-9948350
8.
Correlation between the light- and heavy-hole free-exciton fine structure in AlxGa1-xAs-GaAs multiple-quantum-well structures using photoluminescence excitation spectroscopy.
Reynolds DC; Bajaj KK; Peters G; Leak C; Theis WM; Yu PW; Morkoç H.
Phys Rev B Condens Matter ; 37(12): 7133-7136, 1988 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-9943995
9.
Excitonic transitions in GaAs/GaxAl1-xAs quantum wells observed by photoreflectance spectroscopy: Comparison with a first-principles theory.
Theis WM; Sanders GD; Leak CE; Bajaj KK; Morkoc H.
Phys Rev B Condens Matter ; 37(6): 3042-3051, 1988 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-9944882
10.
Gallium-isotope fine structure of impurity modes due to defect complexes in GaAs.
Talwar DN; Vandevyver M; Bajaj KK; Theis WM.
Phys Rev B Condens Matter ; 33(12): 8525-8539, 1986 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9938250
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