Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination: A First-Principles Study.

Thermal atomic layer etch (ALE) of W metal can be achieved by sequential self-limiting oxidation and chlorination reactions at elevated temperatures. In this paper, we analyze the reaction mechanisms of W ALE using the first-principles simulation. We show that oxidizing agents such as O2, O3, and N2O can be used to produce a WOx surface layer in the first step of an ALE process with ozone being the most reactive. While the oxidation pulse on clean W is very exergonic, our study suggests that runaway oxidation of W is not thermodynamically favorable. In the second ALE pulse, WCl6 and Cl2 remove the oxidized surface W atoms by the formation of volatile tungsten oxychloride (WxOyClz) species. In this pulse, each adsorbed WCl6 molecule was found to remove one surface W atom with a moderate energy cost. Our calculations further show that the desorption of the additional etch products is endothermic by up to 4.7 eV. Our findings are consistent with the high temperatures needed to produce ALE in experiments. In total, our quantum chemical calculations have identified the lowest energy pathways for ALE of tungsten metal along with the most likely etch products, and these findings may help guide the development of improved etch reagents.

Nonadiabatic study of dynamic electronic effects during brittle fracture of silicon.

It has long been observed that brittle fracture of materials can lead to emission of high energy electrons and UV photons, but an atomistic description of the origin of such processes has lacked. We report here on simulations using a first-principles-based electron force field methodology with effective core potentials to describe the nonadiabatic quantum dynamics during brittle fracture in silicon crystal. Our simulations replicate the correct response of the crack tip velocity to the threshold critical energy release rate, a feat that is inaccessible to quantum mechanics methods or conventional force-field-based molecular dynamics. We also describe the crack induced voltages, current bursts, and charge carrier production observed experimentally during fracture but not previously captured in simulations. We find that strain-induced surface rearrangements and local heating cause ionization of electrons at the fracture surfaces.