1.
Phys Rev Lett
; 84(18): 4152-5, 2000 May 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-10990633
RESUMO
A reversible 2D critical transition is observed on the GaAs(001) surface and modeled as a lattice-gas Ising system. Without depositing any material, 2D GaAs islands spontaneously form. The order parameter, four critical exponents, and coupling energies are measured from scanning tunneling microscope images of the microscopic domain structure and correlation functions as a function of temperature and pressure. Unprecedented insight into the domain structure of a 2D Ising system through the critical point and a complete Hamiltonian for modeling the GaAs(001) surface are presented.
2.
Phys Rev B Condens Matter
; 53(16): R10481-R10484, 1996 Apr 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9982711
3.
Phys Rev B Condens Matter
; 41(10): 7197-7200, 1990 Apr 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9992983