RESUMO
We report on the fabrication of a light-emitting diode based on GaN nanorods containing InGaN quantum wells. The unique system consists of tilted N-polar nanorods of high crystalline quality. Photoluminescence, electroluminescence, and spatially resolved cathodoluminescence investigations consistently show quantum well emission around 2.6 eV. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements reveal a truncated shape of the quantum wells with In contents of (15 ± 5)%.
RESUMO
Periodic spatial intensity modulations of near-band-gap luminescence light at 3.36 eV photon energy are reported in nanometer-sized resonators of single zinc oxide nanorods. These modulations are observed when the luminescence light, due to excitonic recombination, is excited by a focused low-energy electron beam scanned along the rods. The acceleration energy of only 2 keV allows for a spatial resolution of a few ten nanometers. Numerical calculations based on the theory of dielectric cylindrical waveguides are performed identifying the intensity modulations as beating patterns of coupled TE01 and TM01 modes in the nanoresonator.
RESUMO
This article reviews the piezoelectric properties of III-nitrides with emphasis on GaN, InN, and their ternary alloys. After a short literature survey we concentrate on semipolar and nonpolar quantum wells grown on crystal planes other than the commonly used c plane ({0001}). The electrostatic field within a quantum well causes a quantum confined Stark effect and thus lowers the radiative transition probability as well as the transition energy. The basic impact of the quantum confined Stark effect on the optical properties of GaInN/GaN quantum wells is discussed in detail. Some routes to determine the magnitude of the electric field are described, and recent results are considered. The measured values are compared to published piezoelectric tensor elements.
RESUMO
We study low-strain synthetic high pressure, high temperature diamonds by cathodoluminescence and observe novel fine structure in the free exciton and the boron-bound exciton emission. The basic spectral structure is a doublet with DeltaE approximately 11 meV common to both exciton spectra. This resolves the previously found inequivalence of free exciton ( approximately 7 meV) and bound exciton ( approximately 12 meV) fine splitting. It is argued that for a spin-orbit interaction Delta(0) much smaller than the excitonic binding ( E(X) approximately 80 meV) and the excitonic localization ( E(loc) approximately 51 meV) at the boron acceptor, the orbital momentum and the spin of the particles constituting the electron-hole pair are recoupled to form spin singlet and triplet exciton states as the elementary excitations.
