Fast detection of micro-objects using scanning electrochemical microscopy based on visual recognition and machine learning.

Scanning electrochemical microscopy (SECM) is a scanning probe microscope with an ultramicroelectrode (UME) as a probe. The technique is advantageous in the characterization of the electrochemical properties of surfaces. However, the limitations, such as slow imaging and many functions depending on the user, only allow us to use some of the possibilities. Therefore, we applied visual recognition and machine learning to detect micro-objects from the image and determine their electrochemical activity. The reconstruction of the image from several approach curves allows it to scan faster and detect active areas of the sample. Therefore, the scanning time and presence of the user is diminished. An automated scanning electrochemical microscope with visual recognition has been developed using commercially available modules, relatively low-cost components, design, software solutions proven in other fields, and an original control and data fusion algorithm.

Magnetoresistance and Magnetic Relaxation of La-Sr-Mn-O Films Grown on Si/SiO2 Substrate by Pulsed Injection MOCVD.

The results of magnetoresistance (MR) and resistance relaxation of nanostructured La1-xSrxMnyO3 (LSMO) films with different film thicknesses (60-480 nm) grown on Si/SiO2 substrate by the pulsed-injection MOCVD technique are presented and compared with the reference manganite LSMO/Al2O3 films of the same thickness. The MR was investigated in permanent (up to 0.7 T) and pulsed (up to 10 T) magnetic fields in the temperature range of 80-300 K, and the resistance-relaxation processes were studied after the switch-off of the magnetic pulse with an amplitude of 10 T and a duration of 200 µs. It was found that the high-field MR values were comparable for all investigated films (~-40% at 10 T), whereas the memory effects differed depending on the film thickness and substrate used for the deposition. It was demonstrated that resistance relaxation to the initial state after removal of the magnetic field occurred in two time scales: fast' (~300 µs) and slow (longer than 10 ms). The observed fast relaxation process was analyzed using the Kolmogorov-Avrami-Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. The smallest remnant resistivity values were found for the LSMO films grown on SiO2/Si substrate in comparison to the LSMO/Al2O3 films. The testing of the LSMO/SiO2/Si-based magnetic sensors in an alternating magnetic field with a half-period of 22 µs demonstrated that these films could be used for the development of fast magnetic sensors operating at room temperature. For operation at cryogenic temperature, the LSMO/SiO2/Si films could be employed only for single-pulse measurements due to magnetic-memory effects.

Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications.

The results of colossal magnetoresistance (CMR) properties of La0.83Sr0.17Mn1.21O3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al2O3, and amorphous Si/SiO2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (-31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (-15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (-56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.