Thermally induced percolational transition and thermal stability of silver nanowire networks studied by THz spectroscopy.

Great demand toward flexible optoelectronic devices finds metal nanowires (NWs) the most promising flexible transparent conducting material with superior mechanical properties. However, ultrathin metal nanowires suffer from relatively poor thermal stability and sheet conductance, attributed to the poor adhesivity of the ohmic contact between nanowires. Thermal heating and annealing at 200 °C increase the conductivity of the metal network, but prolonged annealing accelerates the breakage of NWs near the NW junction and the formation of Ag droplets. In this study, the thermal stability of silver NW (AgNW) films is investigated through the in situ measurements of sheet resistance and terahertz (THz) conductivity. With the improved ohmic contact at the NW junctions by heating, a characteristic transition from the subpercolative to percolative network is observed by in situ THz spectroscopy. It is found that stamp-transferred graphene incorporated with a near-percolative AgNW network can dramatically enhance the thermal stability of the graphene-AgNW (GAgNW) hybrid film. In both in situ measurements, little variation of physical parameters in GAgNW film is observed for up to 3 h of annealing. The presented results offer the potential of graphene-incorporated metal nanowire film as a highly conductive electrode that also has high thermal stability and excellent transparency for next-generation electronics and optoelectronics on flexible substrates.

Realization of metal-insulator transition and oxidation in silver nanowire percolating networks by terahertz reflection spectroscopy.

Metal nanowires (NWs) enable versatile applications in printed electronics and optoelectronics by serving as thin and flexible transparent electrodes. The performance of metal NWs as thin electrodes is highly correlated to the connectivity of NW meshes. The percolation threshold of metal NW films corresponds to the minimum density of NWs to form the transparent, yet conductive metal NW networks. Here, we determine the percolation threshold of silver NW (AgNW) networks by using morphological analysis and terahertz (THz) reflection spectroscopy. From the divergent behavior of carrier scattering time and the increase of carrier backscattering factor, the critical NW density at which crossover from Drude to non-Drude behavior of THz conductivity occurs can be unambiguously determined for AgNW thin films. Furthermore, the natural oxidation of AgNWs which causes the gradual reduction of the connectivity of the AgNW network is also realized by the THz spectroscopy. The selective oxidation of NW-to-NW junctions weakens the ohmic contact, and for AgNWs near a critical density, it can even lead to metal-insulator transition. The presented results offer invaluable information to accelerate the deployment of metal nanowires for next-generation electronics and optoelectronics on flexible substrates.