RESUMO
This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm² LED chip size.
RESUMO
We present a demonstration and analysis of an industrialized design of a spatially dispersive displacement sensor, which is composed of an AlGaInP gain chip in visible range, optical assembly, and a spectrum analyzer. The sensor utilizes the spatial dispersion of focus from the optical assembly and wavelength spectrum's deviation induced by the displacement of the target. As a result, the sensor delivers a quick and simple way of measuring displacement. By adapting the magnification and resolution of the optical assembly, a displacement sensor with a middle measurement range, ~10 microm, was obtained. However, we should note that 25 nm resolution is limited by the bandwidth and temperature fluctuation of the gain chip.