Fe-Doped g-C3N4/Bi2MoO6 Heterostructured Composition with Improved Visible Photocatalytic Activity for Rhodamine B Degradation.

The binary heterostructured semiconducting visible light photocatalyst of the iron-doped graphitic carbon nitride/bismuth molybdate (Fe-g-C3N4/Bi2MoO6) composite was prepared by coupling with Fe-doped g-C3N4 and Bi2MoO6 particles. In the present study, a comparison of structural characteristics, optical properties, and photocatalytic degradation efficiency and activity between Fe-doped g-C3N4 particles, Bi2MoO6 particles, and Fe-g-C3N4/Bi2MoO6 composite was investigated. The results of X-ray diffraction (XRD) examination indicate that the hydrothermal Bi2MoO6 particles have a single orthorhombic phase and Fourier transform infrared (FTIR) spectroscopy analysis confirms the formation of Fe-doped g-C3N4. The optical bandgaps of the Fe-doped g-C3N4 and Bi2MoO6 particles are 2.74 and 2.73 eV, respectively, as estimated from the Taut plots obtained from UV-Vis diffuse reflectance spectroscopy (DRS) spectra. This characteristic indicates that the two semiconductor materials are suitable for absorbing visible light. The transmission electron microscopy (TEM) micrograph reveals the formation of the heterojunction Fe-g-C3N4/Bi2MoO6 composite. The results of photocatalytic degradation revealed that the developed Fe-g-C3N4/Bi2MoO6 composite photocatalyst exhibited significantly better photodegradation performance than the other two single semiconductor photocatalysts. This property can be attributed to the heterostructured nanostructure, which could effectively prevent the recombination of photogenerated carriers (electron-hole pairs) and enhance photocatalytic activity. Furthermore, cycling test showed that the Fe-g-C3N4/Bi2MoO6 heterostructured photocatalyst exhibited good reproducibility and stability for organic dye photodegradation.

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping.

The Ga-doped Mg0.2Zn0.8O (GMZO) transparent semiconductor thin films were prepared using the sol-gel and spin-coating deposition technique. Changes in the microstructural features, optical parameters, and electrical characteristics of sol-gel-synthesized Mg0.2Zn0.8O (MZO) thin films affected by the amount of Ga dopants (0-5 at%) were studied. The results of grazing incidence X-ray diffraction (GIXRD) examination showed that all as-prepared MZO-based thin films had a wurtzite-type structure and hexagonal phase, and the incorporation of Ga ions into the MZO nanocrystals refined the microstructure and reduced the average crystallite size and flatness of surface roughness. Each glass/oxide thin film sample exhibited a higher average transmittance than 91.5% and a lower average reflectance than 9.1% in the visible range spectrum. Experimental results revealed that the optical bandgap energy of the GMZO thin films was slightly higher than that of the MZO thin film; the Urbach energy became wider with increasing Ga doping level. It was found that the 2 at% and 3 at% Ga-doped MZO thin films had better electrical properties than the undoped and 5 at% Ga-doped MZO thin films.

The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors.

Pure CuI and Zn-substituted CuI (CuI:Zn) semiconductor thin films, and metal-semiconductor-metal (MSM) photodetectors were fabricated on glass substrates by a low-temperature solution process. The influence of Zn substitution concentration (0-12 at%) on the microstructural, optical, and electrical characteristics of CuI thin films and its role in improving the optoelectronic performance of CuI MSM photodetectors were investigated in this study. Incorporation of Zn cation dopant into CuI thin films improved the crystallinity and increased the average crystalline size. XPS analysis revealed that the oxidation state of Cu ions in all the CuI-based thin films was +1, and the estimated values of [Cu]/[I] for the CuI:Zn thin films were lower than 0.9. It was found that the native p-type conductivity of polycrystalline CuI thin film was converted to n-type conductivity after the incorporation of Zn ions into CuI nanocrystals, and the electrical resistivity decreased with increases in Zn concentration. A time-resolved photocurrent study indicated that the improvements in the optoelectronic performance of CuI MSM photodetectors were obtained through the substitution of Zn ions, which provided operational stability to the two-terminal optoelectronic device. The 8 at% Zn-substituted CuI photodetectors exhibited the highest response current, responsivity, and EQE, as well as moderate specific detectivity.

High Response CO Sensor Based on a Polyaniline/SnO2 Nanocomposite.

A polyaniline (PANI)/tin oxide (SnO2) composite for a CO sensor was fabricated using a composite film composed of SnO2 nanoparticles and PANI deposition in the present study. Tin oxide nanoparticles were synthesized by the sol-gel method. The SnO2 nanoparticles provided a high surface area to significantly enhance the response to the change in CO concentration at low operating temperature (<75 °C). The excellent sensor response was mainly attributed to the relatively good properties of PANI in the redox reaction during sensing, which produced a great resistance difference between the air and CO gas at low operating temperature. Therefore, the combination of n-type SnO2 nanoparticles with a high surface area and a thick film of conductive PANI is an effective strategy to design a high-performance CO gas sensor.

Hydrothermally Synthesized Mg-Based Spinel Nanoferrites: Phase Formation and Study on Magnetic Features and Microwave Characteristics.

Three kinds of magnesium-based spinel nanoferrites with the chemical formulas of MgFe2O4 (Mg ferrite), Mg0.9Mn0.1Fe2O4 (Mg-Mn ferrite), and Mg0.9Mn0.1In0.1Fe1.9O4 (Mg-Mn-In ferrite) were synthesized by hydrothermal route. We report the composition-dependent magnetic parameters and microwave properties of Mg-based ferrite nanoparticles. XRD results revealed that the Mg-based ferrite nanoparticles exhibited a cubic spinel structure and had an average nanocrystallite size in the range of 5.8⁻2.6 nm. Raman spectroscopy analysis confirmed the formation of cubic-spinel phase Mg-based nanoferrites. The room-temperature magnetization measurements indicated that the Mg ferrite nanoparticles had superparamagnetic behavior; whereas the Mg-Mn and Mg-Mn-In ferrite nanoparticles exhibited a paramagnetic nature. The microwave properties of obtained ferrite nanoparticles were studied by alternating current (AC) magnetic susceptibility measurement and electron paramagnetic resonance (EPR) spectroscopy. It was found that the un-substituted Mg ferrite sample exhibited microwave characteristics better than those of the Mn substituted and Mn-In co-substituted Mg ferrite samples.

Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films.

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO, AZO, and GZO thin films were compared, and the performance of ZnO-based UV photodetectors under ultraviolet A (UVA) light were measured. Experimental results confirmed the synthesis of single-phase nanocrystalline ZnO-based thin films and the successful substitution of Al and Ga into Zn sites in ZnO crystals. The results also demonstrated that the optical transmittance and electrical properties of ZnO thin films could be improved by Al and Ga doping. UV photodetectors based on ZnO-based thin films, having a metal-semiconductor-metal (MSM) configuration, were fabricated with Al inter-digitated electrodes. All photodetectors showed an ohmic nature between semiconductor and electrode contacts and exhibited a sharp increase in photocurrent under illumination with UVA light. We found that the MSM UV photodetector based on the GZO semiconductor thin film exhibited the best UV response (IUVA/Idark) of 73.3 and the highest photocurrent responsivity of 46.2 A/W under UVA light (power density ~0.825 mW/cm²) at 5 V bias.