RESUMO
We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.
RESUMO
We examined the near-field collection efficiency of near-infrared radiation for an aperture probe. We used InAs quantum dots as ideal point light sources with emission wavelengths ranging from 1.1 to 1.6 µm. We experimentally investigated the wavelength dependence of the collection efficiency and compared the results with computational simulations that modeled the actual probe structure. The observed degradation in the collection efficiency is attributed to the cutoff characteristics of the gold-clad tapered waveguide, which approaches an ideal conductor at near-infrared wavelengths.