RESUMO
A systematic method to calculate anharmonic force constants of crystals is presented. The method employs the direct-method approach, where anharmonic force constants are extracted from the trajectory of first-principles molecular dynamics simulations at high temperature. The method is applied to Si where accurate cubic and quartic force constants are obtained. We observe that higher-order correction is crucial to obtain accurate force constants from the trajectory with large atomic displacements. The calculated harmonic and anharmonic force constants are, then, combined with the Boltzmann transport equation (BTE) and non-equilibrium molecular dynamics (NEMD) methods in calculating the thermal conductivity. The BTE approach successfully predicts the lattice thermal conductivity of bulk Si, whereas NEMD shows considerable underestimates. To evaluate the linear extrapolation method employed in NEMD to estimate bulk values, we analyze the size dependence in NEMD based on BTE calculations. We observe strong nonlinearity in the size dependence of NEMD in Si, which can be ascribed to acoustic phonons having long mean-free-paths and carrying considerable heat. Subsequently, we also apply the whole method to a thermoelectric material Mg2Si and demonstrate the reliability of the NEMD method for systems with low thermal conductivities.
Assuntos
Transferência de Energia , Silicatos de Magnésio/química , Modelos Químicos , Simulação de Dinâmica Molecular , Simulação por Computador , Temperatura Alta , Estresse Mecânico , Condutividade Térmica , TermodinâmicaRESUMO
We predict theoretically novel two-dimensional interface ferromagnetism at AlN/MgB(2)(0001) using first-principles calculations, where the interface is employed as an ordered structure of spin sites instead of point defects. Although N dangling bonds are apparently saturated, interfacial states exhibit spin polarization. Hund's coupling of the two N p(â¥) orbitals as well as low density of states at the Fermi energy contribute to strong band ferromagnetism. Furthermore, first-principles electron transport calculations demonstrate that this interfacial spin polarization is responsible for quantum spin transport. The magnetization can be controlled by applied gate bias voltages.
RESUMO
Solid hydrogen, a simple system consisting only of protons and electrons, exhibits a variety of structural phase transitions at high pressures. Experimental studies based on static compression up to about 230 GPa revealed three relevant phases of solid molecular hydrogen: phase I (high-temperature, low-pressure phase), phase II (low-temperature phase) and phase III (high-pressure phase). Spectroscopic data suggest that symmetry breaking, possibly related to orientational ordering, accompanies the transition into phases II and III. The boundaries dividing the three phases exhibit a strong isotope effect, indicating that the quantum-mechanical properties of hydrogen nuclei are important. Here we report the quantum distributions of protons in the three phases of solid hydrogen, obtained by a first-principles path-integral molecular dynamics method. We show that quantum fluctuations of protons effectively hinder molecular rotation--that is, a quantum localization occurs. The obtained crystal structures have entirely different symmetries from those predicted by the conventional simulations which treat protons classically.