Monolithic and Flexible ZnS/SnO2 Ultraviolet Photodetectors with Lateral Graphene Electrodes.

A continuing trend of miniaturized and flexible electronics/optoelectronic calls for novel device architectures made by compatible fabrication techniques. However, traditional layer-to-layer structures cannot satisfy such a need. Herein, a novel monolithic optoelectronic device fabricated by a mask-free laser direct writing method is demonstrated in which in situ laser induced graphene-like materials are employed as lateral electrodes for flexible ZnS/SnO2 ultraviolet photodetectors. Specifically, a ZnS/SnO2 thin film comprised of heterogeneous ZnS/SnO2 nanoparticles is first coated on polyimide (PI) sheets by a solution process. Then, CO2 laser irradiation ablates designed areas of the ZnS/SnO2 thin film and converts the underneath PI into highly conductive graphene as the lateral electrodes for the monolithic photodetectors. This in situ growth method provides good interfaces between the graphene electrodes and the semiconducting ZnS/SnO2 resulting in high optoelectronic performance. The lateral electrode structure reduces total thickness of the devices, thus minimizing the strain and improving flexibility of the photodetectors. The demonstrated lithography-free monolithic fabrication is a simple and cost-effective method, showing a great potential for developement into roll-to-roll manufacturing of flexible electronics.

Enhanced Graphene Mechanical Properties through Ultrasmooth Copper Growth Substrates.

The combination of extraordinary strength and stiffness in conjunction with exceptional electronic and thermal properties in lightweight two-dimensional materials has propelled graphene research toward a wide array of applications including flexible electronics and functional structural components. Tailoring graphene's properties toward a selected application requires precise control of the atomic layer growth process, transfer, and postprocessing procedures. To date, the mechanical properties of graphene are largely controlled through postprocess defect engineering techniques. In this work, we demonstrate the role of varied catalytic surface morphologies on the tailorability of subsequent graphene film quality and breaking strength, providing a mechanism to tailor the physical, electrical, and mechanical properties at the growth stage. A new surface planarization methodology that results in over a 99% reduction in Cu surface roughness allows for smoothness parameters beyond that reported to date in literature and clearly demonstrates the role of Cu smoothness toward a decrease in the formation of bilayer graphene defects, altered domain sizes, monolayer graphene sheet resistance values down to 120 Ω/□ and a 78% improvement in breaking strength. The combined electrical and mechanical enhancements achieved through this methodology allows for the direct growth of application quality flexible transparent conductive films with monolayer graphene.

Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper.

Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small (∼ 0.5 µm(2)) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD-grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h-BN films are unknown. Here, we report the growth and characterization of novel large area h-BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h-BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal-shape h-BN domain observed is 35 µm(2), which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects.