Chiral Magnons in Altermagnetic RuO_{2}.

Magnons in ferromagnets have one chirality, and typically are in the GHz range and have a quadratic dispersion near the zero wave vector. In contrast, magnons in antiferromagnets are commonly considered to have bands with both chiralities that are degenerate across the entire Brillouin zone, and to be in the THz range and to have a linear dispersion near the center of the Brillouin zone. Here we theoretically demonstrate a new class of magnons on a prototypical d-wave altermagnet RuO_{2} with the compensated antiparallel magnetic order in the ground state. Based on density-functional-theory calculations we observe that the THz-range magnon bands in RuO_{2} have an alternating chirality splitting, similar to the alternating spin splitting of the electronic bands, and a linear magnon dispersion near the zero wave vector. We also show that, overall, the Landau damping of this metallic altermagnet is suppressed due to the spin-split electronic structure, as compared to an artificial antiferromagnetic phase of the same RuO_{2} crystal with spin-degenerate electronic bands and chirality-degenerate magnon bands.

An Ab Initio Study of Pressure-Induced Changes of Magnetism in Austenitic Stoichiometric Ni2MnSn.

We have performed a quantum-mechanical study of a series of stoichiometric Ni2MnSn structures focusing on pressure-induced changes in their magnetic properties. Motivated by the facts that (i) our calculations give the total magnetic moment of the defect-free stoichiometric Ni2MnSn higher than our experimental value by 12.8% and (ii) the magnetic state is predicted to be more sensitive to hydrostatic pressures than seen in our measurements, our study focused on the role of point defects, in particular Mn-Ni, Mn-Sn and Ni-Sn swaps in the stoichiometric Ni2MnSn. For most defect types we also compared states with both ferromagnetic (FM) and anti-ferromagnetic (AFM) coupling between (i) the swapped Mn atoms and (ii) those on the Mn sublattice. Our calculations show that the swapped Mn atoms can lead to magnetic moments nearly twice smaller than those in the defect-free Ni2MnSn. Further, the defect-containing states exhibit pressure-induced changes up to three times larger but also smaller than those in the defect-free Ni2MnSn. Importantly, we find both qualitative and quantitative differences in the pressure-induced changes of magnetic moments of individual atoms even for the same global magnetic state. Lastly, despite of the fact that the FM-coupled and AFM-coupled states have often very similar formation energies (the differences only amount to a few meV per atom), their structural and magnetic properties can be very different.

Crystal Structure and Magnetic Properties of Uranium Hydride UH2 Stabilized as a Thin Film.

A new type of uranium binary hydride, UH2, with the CaF2 crystal structure, was synthesized in a thin-film form using reactive sputter deposition at low temperatures. The material has a grain size of 50-100 nm. The lattice parameter a = (535.98 ± 0.14 pm) is close to that in known Np (534.3 pm) and Pu (535.9 pm) iso-types. UH2 is a metallic ferromagnet with the Curie temperature TC ≈ 120 K. A very wide hysteresis loop indicates strong magnetocrystalline anisotropy. X-ray photoelectron spectroscopy reveals similarities with electronic structure of UH3, which is also ferromagnet with higher TC = 165 K.

Transport properties of Fe/GaAs/Ag(001) system.

We present results of ab initio transport calculations for epitaxial magnetic tunnel junctions Fe/GaAs/Ag(001). The electronic structure is calculated by means of the tight-binding linear muffin-tin orbital method and the ballistic conductances are evaluated within the Kubo-Landauer formalism which includes the effect of the spin-orbit interaction. Particular attention is paid to the dependence of the conductances on the orientation of magnetization direction of the Fe electrode with respect to the crystal lattice and on the thickness of the tunneling barrier. We have found that the in-plane tunneling anisotropic magnetoresistance (TAMR) exhibits a non-monotonic thickness dependence with a maximum around 7.5 nm of GaAs. This behavior is ascribed to a hybridization of interface resonances formed on both sides of the junction and manifested as hot spots in k[]-resolved conductances. For thicker GaAs barriers, the relative intensity of the hot spots is reduced on account of the contribution from a narrow central region of the two-dimensional Brillouin zone which leads to the final decrease of the TAMR effect.