Ultrafast Photoluminescence from the Core and the Shell in CdSe/CdS Dot-in-Rod Heterostructures.

With an ultrafast time-resolved photoluminescence system utilizing a Kerr gate, the time-resolved photoluminescence of core and shell constituents within CdSe/CdS dot-in-rod heterostructures is studied as a function of heterostructure size. Measurements performed at low excitation fluence generating, on average, less than one exciton per nanorod, reveal photoluminescence from direct recombination of carriers in the CdS heterostructure rod with lifetime generally increasing from 0.4 ps to 1.3 ps as the rod length increases. Decay of the CdS rod photoluminescence is accompanied by an increase in emission from the CdSe core on comparable time scales, also trending towards larger values as the rod length increases. The observed kinetics can be explained without invoking a non-radiative trapping mechanism. We also present alloying as a mechanism for enhancing electron confinement and reducing fluorescence lifetime at nanosecond time scales.

Ultrafast electron trapping in ligand-exchanged quantum dot assemblies.

We use time-integrated and time-resolved photoluminescence and absorption to characterize the low-temperature optical properties of CdSe quantum dot solids after exchanging native aliphatic ligands for thiocyanate and subsequent thermal annealing. In contrast to trends established at room temperature, our data show that at low temperature the band-edge absorptive bleach is dominated by 1S3/2h hole occupation in the quantum dot interior. We find that our ligand treatments, which bring enhanced interparticle coupling, lead to faster surface state electron trapping, a greater proportion of surface-related photoluminescence, and decreased band-edge photoluminescence lifetimes.

Gate-induced carrier delocalization in quantum dot field effect transistors.

We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the "localization product" (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.

Ultrafast spectral migration of photoluminescence in graphene oxide.

We use subpicosecond time-resolved photoluminescence measurements to study the nature of photoluminescence in graphene oxide and reduced graphene oxide. Our data indicate that, in contrast to prior suggestions, the photoluminescence spectra of graphene oxide and reduced graphene oxide are inhomogeneously broadened. We observe substantial energy redistribution and relaxation among the emitting states within the first few picoseconds, leading to a progressive red shift of the emission spectrum. Blue shifts that arise in time-integrated spectra upon photothermal reduction are easily understood within this dynamical context without invoking a modified distribution of dipole-coupled states. Rather, reduction increases the nonradiative electron-hole recombination rate and curtails the red-shifting process, which is consistent with an increase in quenching through the introduction of larger and/or more numerous sp(2) clusters. Polarization memory measurements show energetic signatures of electron-hole correlations, established on a subpicosecond time scale and developing little thereafter.

Tailoring hot-exciton emission and lifetimes in semiconducting nanowires via whispering-gallery nanocavity plasmons.

The manipulation of radiative properties of light emitters coupled with surface plasmons is important for engineering new nanoscale optoelectronic devices, including lasers, detectors and single photon emitters. However, so far the radiative rates of excited states in semiconductors and molecular systems have been enhanced only moderately, typically by a factor of 10-50, producing emission mostly from thermalized excitons. Here, we show the generation of dominant hot-exciton emission, that is, luminescence from non-thermalized excitons that are enhanced by the highly concentrated electromagnetic fields supported by the resonant whispering-gallery plasmonic nanocavities of CdS-SiO(2)-Ag core-shell nanowire devices. By tuning the plasmonic cavity size to match the whispering-gallery resonances, an almost complete transition from thermalized exciton to hot-exciton emission can be achieved, which reflects exceptionally high radiative rate enhancement of >10(3) and sub-picosecond lifetimes. Core-shell plasmonic nanowires are an ideal test bed for studying and controlling strong plasmon-exciton interaction at the nanoscale and opens new avenues for applications in ultrafast nanophotonic devices.