Supercritical Gallium Trichloride in Oxidative Metal Recycling: Ga2Cl6 Dimers vs GaCl3 Monomers and Rheological Behavior.

Oxidative recycling of metals is crucial for a circular economy, encompassing the preservation of natural resources, the reduction of energy consumption, and the mitigation of environmental impacts and greenhouse gas emissions associated with traditional mining and processing. Low-melting gallium trichloride appears to be a promising oxidative solvent for rare-earth metals, transuranium elements, platinum, pnictogens, and chalcogens. Typically, oxidative dissolution with GaCl3 occurs at relatively low temperatures over a few days, assuming the presence of tetrahedral Ga-Cl entities. While supercritical gallium trichloride holds the potential for advanced recycling, little is known about its structure and viscosity. Using high-energy X-ray diffraction and multiscale modeling, which includes first-principles simulations, we have revealed a dual molecular nature of supercritical gallium trichloride, consisting of tetrahedral dimers and flat trigonal monomers. The molecular geometry can be precisely tuned by adjusting the temperature and pressure, optimizing the recycling process for specific metals. The derived viscosity, consistent with the reported results in the vicinity of melting, decreases by a factor of 100 above the critical temperature, enabling fast molecular diffusion, and efficient recycling kinetics.

Gallium Trichloride Fluid: Dimer Dissociation Mechanism, Local Structure, and Atomic Dynamics.

Molten gallium trichloride emerges as a promising solvent for oxidative metal recycling. The use of supercritical fluid enhances the performance and kinetics of metal dissolution due to significantly lower viscosity in the reaction media. Additionally, the dual molecular nature of gallium trichloride, existing as edge-sharing ES-Ga2Cl6 dimers at low temperatures and high pressure, or flat trigonal GaCl3 monomers in the vicinity of the critical point and low pressures, creates the possibility to tailor the chemical geometry to a particular metallic species. Nevertheless, the mechanism of dimer dissociation, local structure, and atomic dynamics in supercritical gallium trichloride fluids are not known. Using first-principles molecular dynamics, validated by comparison with our high-energy X-ray diffraction results, we illustrate the elementary steps in dimer dissociation. These include the formation of intermediate corner-sharing CS-Ga2Cl6 dimers, the partial disproportionation of GaCl3 monomers at high temperatures and low pressures, changes in the local environment of molecular entities, and unusual atomic dynamics in supercritical fluids.

Remarkably Stable Glassy GeS2 Densified at 8.3 GPa: Hidden Polyamorphism, Contrasting Optical Properties, Raman and DFT Studies, and Advanced Applications.

Glassy GeS2, densified at 8.3 GPa, exhibits a strongly reduced bandgap, predominantly tetrahedral Ge environment, enhanced chemical disorder and partial 3-fold coordination of both germanium and sulfur, assuming two possible reaction paths under high pressure: (i) a simple dissociation 2Ge-S ⇄ Ge-Ge + S-S and (ii) a chemical disproportionation GeS2 ⇄ GeS + S. The observed electronic and structural changes remain intact for at least seven years under ambient conditions but are gradually evolving upon heating. The relaxation kinetics at elevated temperatures, up to the glass transition temperature Tg, suggests that complete recovery of the densified glassy GeS2 over a typical operational T-range of optoelectronic devices will take many thousands of years. The observed logarithmic relaxation and nearly infinite recovery time at room temperature raise questions about the nature of millennia-long phenomena in densified GeS2. Two alternative explanations will be discussed: (1) hidden polyamorphism and (2) continuous structural and chemical changes under high pressure. These investigations offer valuable insights into the behavior of glassy GeS2 under extreme conditions and its potential applications in optoelectronic devices and other advanced technologies.

Peculiarity of the Structure and Luminescence of Glasses in La2S3-Ga2S3-GeS2:Pr3+ System.

The effect of modifying the composition of a glass matrix based on the Ga2S3-GeS2:Pr3+ system due to the addition of La2S3 on the structure and the optical and luminescent properties of these glasses has been studied. It has been shown that the addition of La2S3 leads to changes in the nearest structural environment of Ga, Ge, and S and increases the degree of ionicity of the bonds of the Pr3+ ion. Despite the existence of a large glass formation region in the Ga2S3-GeS2-La2S3 system and the structural and chemical similarity of La and Pr, La2S3 does not promote a more uniform distribution of Pr3+ ions in the glass matrix, and thus does not reduce the concentration quenching of the luminescence of Pr3+ ions. However, the addition of La2S3 increases the probability of emission of Pr3+ ions and decreases the radiative lifetime. Additionally, it was shown that, when studying the structure and luminescent properties of glasses with La, it is necessary to take into account a significant concentration of rare earth traces (Pr and Nd).

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations.

Neuromorphic computing, reconfigurable optical metamaterials that are operational over a wide spectral range, holographic and nonvolatile displays of extremely high resolution, integrated smart photonics, and many other applications need next-generation phase-change materials (PCMs) with better energy efficiency and wider temperature and spectral ranges to increase reliability compared to current flagship PCMs, such as Ge2Sb2Te5 or doped Sb2Te. Gallium tellurides are favorable compounds to achieve the necessary requirements because of their higher melting and crystallization temperatures, combined with low switching power and fast switching rate. Ga2Te3 and non-stoichiometric alloys appear to be atypical PCMs; they are characterized by regular tetrahedral structures and the absence of metavalent bonding. The sp3 gallium hybridization in cubic and amorphous Ga2Te3 is also different from conventional p-bonding in flagship PCMs, raising questions about its phase-change mechanism. Furthermore, gallium tellurides exhibit a number of unexpected and highly unusual phenomena, such as nanotectonic compression and viscosity anomalies just above their melting points. Using high-energy X-ray diffraction, supported by first-principles simulations, we will elucidate the atomic structure of amorphous Ga2Te5 PLD films, compare it with the crystal structure of tetragonal gallium pentatelluride, and investigate the electrical, optical, and thermal properties of these two materials to assess their potential for memory applications, among others.

Structure and Luminescent Properties of Glasses in the GeS2-Ga2S3-Sb2S3:Pr3+ System.

The physicochemical, optical, and luminescent properties and structures of glasses of the Ga2S3-GeS2-Sb2S3:Pr system have been studied in a wide range of concentrations of the main components in order to reveal their correlation with the composition. According to the calculations using the Judd-Ofelt theory, glasses with a high content of Sb2S3 should provide the highest luminescence efficiency of Pr3+ ions. However, this result is leveled by enhancing the concentration quenching effect, followed by an increase of the Sb2S3 content in the glasses. The introduction of Pr leads to a significant increase in the fraction of Sb-Sb, Sb-Ge, Ge-Ge bonds in glasses enriched with Sb2S3 and GeS2. In the cases of the glasses enriched with Ga2S3, this effect was not observed, apparently because Ga promotes the formation of three-coordinated sulfur atoms.

GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation.

The phenomenon of phase change transition has been a fascinating research subject over decades due to a possibility of dynamically controlled materials properties, allowing the creation of optical devices with unique features. The present paper unravels the optical characteristics and terahertz (THz) dielectric permittivity of a novel phase change material (PCM), GeTe2, prepared by pulsed laser deposition (PLD) and their remarkable contrast in crystalline and amorphous states, in particular, a difference of 7 orders of magnitude in conductivity. The THz spectra were analyzed using the harmonic oscillator and Drude term. Using GeTe2 PLD films, we designed and prepared a THz metasurface in the form of periodic structure and revealed a possibility of tuning the THz resonance either by a thermal control or light-induced crystallization response, thus achieving the dynamic and tunable functionality of the metastructure. We propose controlling the state of metasurface by observing the intensity characteristics of the Raman peak of 155 cm-1. Density functional theory (DFT) modeling demonstrates that in the process of crystallization the mode intensity of 155 cm-1 assigned to Te-Te stretching in amorphous chain fragments decreases and disappears at full crystallization.

Transient Mesoscopic Immiscibility, Viscosity Anomaly, and High Internal Pressure at the Semiconductor-Metal Transition in Liquid Ga2Te3.

Gallium tellurides appear to be promising phase-change materials (PCMs) of the next generation for brain-inspired computing and reconfigurable optical metasurfaces. They are different from the benchmark PCMs because of sp3 gallium hybridization in both cubic Ga2Te3 and amorphous pulsed laser deposition (PLD) films. Liquid Ga2Te3 also shows a viscosity η(T) anomaly just above melting when η(T) first increases and only then starts decreasing. We used high-energy X-ray diffraction to observe a transient mesoscopic immiscibility that suggested dense metallic liquid droplets in a semiconducting melt. The η(T) shape was consistent with this finding. A vanishing first sharp diffraction peak that also shifts to a higher Q indicates a high internal pressure in the metallic melt, which produces a remarkable asymmetry of the Ga-Te nearest neighbor distances and is reminiscent of high-pressure rhombohedral Ga2Te3. The observed phenomena provide a realistic scenario for a fast, multilevel SET-RESET response, which also unravels similar trends in the purported density-driven liquid polyamorphism of water, phosphorus, sulfur, and other materials.

Unraveling the Atomic Structure of Bulk Binary Ga-Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications.

Binary Ge-Te and ternary Ge-Sb-Te systems belong to flagship phase-change materials (PCMs) and are used in nonvolatile memory applications and neuromorphic computing. The working temperatures of these PCMs are limited by low-T glass transition and crystallization phenomena. Promising high-T PCMs may include gallium tellurides; however, the atomic structure and transformation processes for amorphous Ga-Te binaries are simply missing. Using high-energy X-ray diffraction and Raman spectroscopy supported by first-principles simulations, we elucidate the short- and intermediate-range order in bulk glassy GaxTe1-x, 0.17 ≤ x ≤ 0.25, following their thermal, electric, and optical properties, revealing a semiconductor-metal transition above melting. We also show that a phase change in binary Ga-Te is characterized by a very unusual nanotectonic compression with the high internal transition pressure reaching 4-8 GPa, which appears to be beneficial for PCM applications increasing optical and electrical contrast between the SET and RESET states and decreasing power consumption.

Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications.

Phase-change materials based on tellurides are widely used for optical storage (DVD and Blu-ray disks), non-volatile random access memories and for development of neuromorphic computing. Narrow-gap tellurides are intrinsically limited in the telecom spectral window, where materials having a wider gap are needed. Here we show that gallium sulfide GaS thin films prepared by pulsed laser deposition reveal good transparency from the visible to the mid-IR spectral range with optical gap Eg = 2.34 eV, high refractive index nR = 2.50 over the 0.8 ≤ λ ≤ 2.5 µm range and, unlike canonical chalcogenide glasses, the absence of photo-structural transformations with a laser-induced peak power density damage threshold above 1.4 TW cm-2 at 780 nm. The origin of the excellent damage threshold under a high-power laser and UV light irradiation resides in the rigid tetrahedral structure of vitreous GaS studied by high-energy X-ray diffraction and Raman spectroscopy and supported by first-principles simulations. The average local coordination number appears to be m = 3.44, well above the optimal connectivity, 2.4 ≤ m ≤ 2.7, and the total volume of microscopic voids and cavities is 34.4%, that is, lower than for the vast majority of binary sulfide glasses. The glass-crystal phase transition in gallium sulfide thin films may be accompanied by a drastic change in the nonlinear optical properties, opening up a new dimension for memory applications in the visible to mid-IR spectral ranges.

Pressure-Driven Chemical Disorder in Glassy As2S3 up to 14.7 GPa, Postdensification Effects, and Applications in Materials Design.

A small difference in energy between homopolar and heteropolar bonds and the glass-forming ability of pure chalcogens leads to unexpected trends in densification mechanisms of glassy chalcogenides compared to vitreous oxides. Using high-precision compressibility measurements and in situ high-energy X-ray diffraction up to 14.7 GPa, we show a new densification route in a canonical glass As2S3. After the first reversible elastic step with a maximum pressure of 1.3 GPa, characterized by a strong reduction of voids and cavities, a significant bonding or chemical disorder is developed under higher pressure, reaching a saturation of 30% in the population of As-As bonds above 8-9 GPa. The pressure-driven chemical disorder is accompanied by a remarkable structural relaxation and a strongly diminished optical gap and determines structural, vibrational, and optical properties under and after cold compression. The decompressed recovered glass conserves a dark color and exhibits two relaxation processes: (a) fast (a few days) and (b) slow (months/years at room temperature). The enhanced refractive index of the recovered glass is promising for optical applications with improved functionalities. A nearly permanent red shift in optical absorption after decompression can be used in high-impact-force optical sensors.

Bandgap guidance in hybrid chalcogenide-silica photonic crystal fibers.

We report a hybrid chalcogenide-silica photonic crystal fiber made by pressure-assisted melt-filling of molten glass. Photonic bandgap guidance is obtained at a silica core placed centrally in a hexagonal array of continuous centimeters-long chalcogenide strands with diameters of 1.45 µm. In the passbands of the cladding, when the transmission through the silica core is very weak, the chalcogenide strands light up with distinct modal patterns corresponding to Mie resonances. In the spectral regions between these passbands, strong bandgap guidance is observed, where the silica core transmission loss is 60 dB/cm lower. The pressure-assisted fabrication approach opens up new ways of integrating sophisticated glass-based devices into optical fiber circuitry with potential applications in supercontinuum generation, magneto-optics, wavelength selective devices, and rare-earth-doped amplifiers with high gain per unit length.