RESUMO
An oscillating piezoresistive microcantilever (MC) coated with an aluminum (Al)-doped zinc oxide (ZnO) nanorods was used to detect carbon monoxide (CO) in air at room temperature. Al-doped ZnO nanorods were grown on the MC surface using the hydrothermal method, and a response to CO gas was observed by measuring a resonant frequency shift of vibrated MC. CO gas response showed a significant increase in resonant frequency, where sensitivity in the order of picogram amounts was obtained. An increase in resonant frequency was also observed with increasing gas flow rate, which was simultaneously followed by a decrease in relative humidity, indicating that the molecular interface between ZnO and H2O plays a key role in CO absorption. The detection of other gases of carbon compounds such as CO2 and CH4 was also performed; the sensitivity of CO was found to be higher than those gases. The results demonstrate the reversibility and reproducibility of the proposed technique, opening up future developments of highly sensitive CO-gas detectors with a fast response and room temperature operation.
RESUMO
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.
