Electrical and optoelectronic anisotropy and surface electron accumulation in ReS2 nanostructures.

Two interesting electronic transport properties including in-plane anisotropy and nonhomogeneous carrier distribution were observed in ReS2 nanoflakes. The electrical conductivity defined by the current parallel to the b-axis (‖b) is 32 times higher than that perpendicular to the b-axis (⊥b). Similar anisotropy was also observed in optoelectronic properties in which the ratio of responsivity ‖b to ⊥b reaches 20. In addition, conductivity and thermal activation energy with substantial thickness dependence were observed, which indicates a surface-dominant 2D transport in ReS2 nanoflakes. The presence of surface electron accumulation (SEA) in ReS2 has been confirmed by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy. The electron concentration (∼1019 cm-3) at the surface is over three orders of magnitude higher than that of the bulks. Sulfur vacancies which are sensitive to air molecules are suggested to be the major factor resulting in SEA and high conductivity in ReS2 nanostructures.

Photoconduction Properties in Tungsten Disulfide Nanostructures.

We reported the photoconduction properties of tungsten disulfide (WS2) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The results reveal a linear dependence of photocurrent on the excitation power, and the photoresponsivity shows an independent behavior at higher light intensities (400-4000 Wm-2). The WS2 photodetector exhibits superior performance with responsivity in the range of 36-73 AW-1 and a normalized gain in the range of 3.5-7.3 10-6 cm2V-1 at a lower bias voltage of 1 V. The admirable photoresponse at different light intensities suggests that WS2 nanostructures are of potential as a building block for novel optoelectronic device applications.

Molybdenum Disulfide Nanoribbons with Enhanced Edge Nonlinear Response and Photoresponsivity.

MoS2 nanoribbons have attracted increased interest due to their properties, which can be tailored by tuning their dimensions. Herein, the growth of MoS2 nanoribbons and triangular crystals formed by the reaction between films of MoOx (2

A Bi-Anti-Ambipolar Field Effect Transistor.

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

Unprecedented random lasing in 2D organolead halide single-crystalline perovskite microrods.

Three-dimensional organic-inorganic hybrid halide perovskites have been demonstrated as great materials for applications in optoelectronics and photonics. However, their inherent instabilities in the presence of moisture, light, and heat may hinder their commercialization. Alternatively, emerging two-dimensional (2D) organic-inorganic hybrid perovskites have recently attracted increasing attention owing to their great environmental stability and inherent natural quantum-well structure. In this work, we have synthesized a high-quality long-chain organic diammonium spacer assisted 2D hybrid perovskite FA-(N-MPDA)PbBr4 (FA = formamidinium and N-MPDA = N-methylpropane-1,3-diammonium) by the slow evaporation at constant temperature method. The millimeter-sized single-crystalline microrods demonstrate low threshold random lasing behavior at room temperature. The single-crystalline 2D hybrid perovskite random laser achieved a very narrow linewidth (∼0.1 nm) with a low threshold (∼0.5 µJ cm-2) and a high quality factor (∼5350). Furthermore, the 2D hybrid microrod laser shows stable lasing emission with no measurable degradation after at least 2 h under continuous illumination, which substantially proves the stability of 2D perovskites. Our results demonstrate the promise of 2D organic-inorganic microrod-shaped perovskites and provide an important step toward the realization of high-performance optoelectronic devices.

Modulating Charge Separation with Hexagonal Boron Nitride Mediation in Vertical Van der Waals Heterostructures.

Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump-probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W-1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.

Sn-Doping Enhanced Ultrahigh Mobility In1-xSnxSe Phototransistor.

Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In1-xSnxSe phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In1-xSnxSe flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In1-xSnxSe crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In1-xSnxSe have higher mobility than in InSe. The internally boosted electrical properties of In1-xSnxSe exhibit ultrahigh mobility of 2560 ± 240 cm2 V-1 s-1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In1-xSnxSe flakes are highly sensitive with a detectivity of 1014 Jones. It possesses a large photoresponsivity and photogain (Vg = 40 V) as high as 3 × 105 A W-1 and 0.5 × 106, respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In1-xSnxSe-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.

Ultra-high performance flexible piezopotential gated In1-xSnxSe phototransistor.

Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in In1-xSnxSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW-1. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of In1-xSnxSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.

Lipid-Modified Graphene-Transistor Biosensor for Monitoring Amyloid-ß Aggregation.

A graphene field-effect transistor (G-FET) with the spacious planar graphene surface can provide a large-area interface with cell membranes to serve as a platform for the study of cell membrane-related protein interactions. In this study, a G-FET device paved with a supported lipid bilayer (referred to as SLB/G-FET) was first used to monitor the catalytic hydrolysis of the SLB by phospholipase D. With excellent detection sensitivity, this G-FET was also modified with a ganglioside GM1-enriched SLB (GM1-SLB/G-FET) to detect cholera toxin B. Finally, the GM1-SLB/G-FET was employed to monitor amyloid-beta 40 (Aß40) aggregation. In the early nucleation stage of Aß40 aggregation, while no fluorescence was detectable with traditional thioflavin T (ThT) assay, the prominent electrical signals probed by GM1-SLB/G-FET demonstrate that the G-FET detection is more sensitive than the ThT assay. The comprehensive kinetic information during the Aß40 aggregation could be collected with a GM1-SLB/G-FET, especially covering the kinetics involved in the early stage of Aß40 aggregation. These experimental results suggest that SLB/G-FETs hold great potential as a powerful biomimetic sensor for versatile investigations of membrane-related protein functions and interaction kinetics.

Detection of K+ Efflux from Stimulated Cortical Neurons by an Aptamer-Modified Silicon Nanowire Field-Effect Transistor.

The concentration gradient of K+ across the cell membrane of a neuron determines its resting potential and cell excitability. During neurotransmission, the efflux of K+ from the cell via various channels will not only decrease the intracellular K+ content but also elevate the extracellular K+ concentration. However, it is not clear to what extent this change could be. In this study, we developed a multiple-parallel-connected silicon nanowire field-effect transistor (SiNW-FET) modified with K+-specific DNA-aptamers (aptamer/SiNW-FET) for the real-time detection of the K+ efflux from cultured cortical neurons. The aptamer/SiNW-FET showed an association constant of (2.18 ± 0.44) × 106 M-1 against K+ and an either less or negligible response to other alkali metal ions. The α-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) stimulation induced an outward current and hyperpolarized the membrane potential in a whole-cell patched neuron under a Na+/K+-free buffer. When neurons were placed atop the aptamer/SiNW-FET in a Na+/K+-free buffer, AMPA (13 µM) stimulation elevated the extracellular K+ concentration to ∼800 nM, which is greatly reduced by 6,7-dinitroquinoxaline-2,3-dione, an AMPA receptor antagonist. The EC50 of AMPA in elevating the extracellular K+ concentration was 10.3 µM. By stimulating the neurons with AMPA under a normal physiological buffer, the K+ concentration in the isolated cytosolic fraction was decreased by 75%. These experiments demonstrate that the aptamer/SiNW-FET is sensitive for detecting cations and the K+ concentrations inside and outside the neurons could be greatly changed to modulate the neuron excitability.

One-Step Synthesis of Antioxidative Graphene-Wrapped Copper Nanoparticles on Flexible Substrates for Electronic and Electrocatalytic Applications.

In this study, we report a novel, one-step synthesis method to fabricate multilayer graphene (MLG)-wrapped copper nanoparticles (CuNPs) directly on various substrates (e.g., polyimide film (PI), carbon cloth (CC), or Si wafer (Si)). The electrical resistivities of the pristine MLG-CuNPs/PI and MLG-CuNPs/Si were measured 1.7 × 10-6 and 1.4 × 10-6 Ω·m, respectively, of which both values are ∼100-fold lower than earlier reports. The MLG shell could remarkably prevent the Cu nanocore from serious damages after MLG-CuNPs being exposed to various harsh conditions. Both MLG-CuNPs/PI and MLG-CuNPs/Si retained almost their conductivities after ambient annealing at 150 °C. Furthermore, the flexible MLG-CuNPs/PI exhibits excellent mechanical durability after 1000 bending cycles. We also demonstrate that the MLG-CuNPs/PI can be used as promising source-drain electrodes in fabricating flexible graphene-based field-effect transistor (G-FET) devices. Finally, the MLG-CuNPs/CC was shown to possess high performance and durability toward hydrogen evolution reaction (HER).

Targeted and efficient activation of channelrhodopsins expressed in living cells via specifically-bound upconversion nanoparticles.

Optogenetics is an innovative technology now widely adopted by researchers in different fields of biological sciences. However, most light-sensitive proteins adopted in optogenetics are excited by ultraviolet or visible light which has a weak tissue penetration capability. Upconversion nanoparticles (UCNPs), which absorb near-infrared (NIR) light to emit shorter wavelength light, can help address this issue. In this report, we demonstrated the target selectivity by specifically conjugating the UCNPs with channelrhodopsin-2 (ChR2). We tagged the V5 epitope to the extracellular N-terminal of ChR2 (V5-ChR2m) and functionalized the surface of UCNPs with NeutrAvidin (NAv-UCNPs). After the binding of the biotinylated antibody against V5 onto the V5-ChR2m expressed in the plasma membrane of live HEK293T cells, our results showed that the NAv-UCNPs were specifically bound to the membrane of cells expressing V5-ChR2m. Without the V5 epitope or NAv modification, no binding of UCNPs onto the cell membrane was observed. For the cells expressing V5-ChR2m and bound with NAv-UCNPs, both 488 nm illumination and the upconverted blue emission from UCNPs by 980 nm excitation induced an inward current and elevated the intracellular Ca2+ concentration. Our design reduces the distance between UCNPs and light-sensitive proteins to the molecular level, which not only minimizes the NIR energy required but also provides a way to guide the specific binding for optogenetics applications.

High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors.

In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (∼28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ∼ 206 A W(-1) under 1.5 µW cm(-2) illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ∼ 206 A W(-1) is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the layered-materials realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ∼ 655 A W(-1) operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ∼ 4.0 × 10(4)%) and specific detectivity (D* ∼ 2.35 × 10(13) Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications.