RESUMO
The magnetic interfacial Dzyaloshinskii-Moriya interaction (DMI) in multilayered thin films can lead to chiral spin states, which are of paramount importance for future spintronic technologies1,2. Interfacial DMI typically manifests as an intralayer interaction, mediated via a paramagnetic heavy metal in systems lacking inversion symmetry3. Here we show that, by designing synthetic antiferromagnets with canted magnetization states4,5, it is also possible to observe direct evidence of the interfacial interlayer DMI at room temperature. The interlayer DMI breaks the symmetry of the magnetic reversal process via the emergence of non-collinear spin states, which results in chiral exchange-biased hysteresis loops. The spin chiral interlayer interactions reported here are expected to manifest in a range of multilayered thin-film systems, opening up as yet unexplored avenues for the development and exploitation of chiral effects in magnetic heterostructures6-8.
RESUMO
Magnetic domain wall motion could be the key to the next generation of data storage devices, shift registers without mechanically moving parts. Various concepts of such so-called 'racetrack memories' have been developed, but they are usually plagued by the need for high current densities or complex geometrical requirements. We introduce a new device concept, based on the interfacial Dzyaloshinskii-Moriya interaction (DMI), of which the importance in magnetic thin films was recently discovered. In this device the domain walls are moved solely by magnetic fields. Unidirectionality is created utilizing the recent observation that the strength with which a domain wall is pinned at an anisotropy barrier depends on the direction of the in-plane field due to the chiral nature of DMI. We demonstrate proof-of-principle experiments to verify that unidirectional domain-wall motion is achieved and investigate several material stacks for this novel device including a detailed analysis of device performance for consecutive pinning and depinning processes.
