Intrinsic microwave dielectric loss of lanthanum aluminate.

The intrinsic dielectric properties of LaAlO3 were investigated to understand the microwave properties of several materials containing LaAlO3. In this study, LaAlO3 single crystals were prepared by the Czochralski method. The temperature dependence of the dielectric properties and neutron inelastic scattering of the single crystals were measured. From these data, the intrinsic dielectric properties were evaluated and it was found that the dielectric loss of the LaAlO3 includes two types of dielectric loss. One is a phonon absorption-related loss and the other is a component of the loss arising from Debye- type orientation polarization. The latter affects the room temperature dielectric loss in materials containing LaAlO3. The present study suggests that avoiding this polarization loss is an important goal in decreasing the total dielectric loss.

Does bulk metallic glass of elemental Zr and Ti exist?

To verify the high-pressure formation of the bulk metallic glass in elemental Zr and Ti, which Zhang and Zhao [Nature (London) 430, 332 (2004)] and Y. Wang et al. [Phys. Rev. Lett. 95, 155501 (2005)] recently reported, the high-pressure states were investigated by our newly developed in situ angle-dispersive x-ray diffraction using a two-dimensional detector and x-ray transparent anvils. Despite the disappearance of all the Bragg peaks in the one-dimensional energy-dispersive data, two-dimensional angle-dispersive data showed several intense Bragg spots even at the conditions where the amorphization was reported. This finding suggests that Zr and Ti do not transform into an amorphous state, but that their grain size becomes large, which causes the missing Bragg peaks in energy-dispersive data.

Macroscopic separation of dense fluid phase and liquid phase of phosphorus.

Structural transformation between a dense molecular fluid and a polymeric liquid of phosphorus that occurred at about 1 gigapascal and 1000 degrees C was investigated by in situ x-ray radiography. When the low-pressure fluid was compressed, dark and round objects appeared in the radiograph. X-ray diffraction measurements confirmed that these objects were the highpressure liquid. The drops grew and eventually filled the sample space. Decompressing caused the reverse process. The macroscopic phase separation supported the existence of a first-order phase transition between two stable disordered phases besides the liquid-gas transition. X-ray absorption measurements revealed that the change in density at the transition corresponds to about 40% of the density of the high-pressure liquid.

Pressure-induced sharp coordination change in liquid germanate.

Local structures around germanium in liquid germanate have been investigated by means of in situ x-ray absorption measurements up to 9 GPa at 1273 K. Liquid germanate consisting of tetrahedrally coordinated germanium contracts with increasing pressure without significant changes in the local structure up to 2.5 GPa and then shows an abrupt fourfold-to-sixfold coordination change around 3 GPa. The coordination change is completed below 4 GPa where upon a high-density liquid consisting of octahedrally coordinated germanium becomes stable. The GeO6 octahedron in the high-density liquid is more compressible than that in solids.

Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth.

The synthesis of large single crystals of GaN (gallium nitride) is a matter of great importance in optoelectronic devices for blue-light-emitting diodes and lasers. Although high-quality bulk single crystals of GaN suitable for substrates are desired, the standard method of cooling its stoichiometric melt has been unsuccessful for GaN because it decomposes into Ga and N(2) at high temperatures before its melting point. Here we report that applying high pressure completely prevents the decomposition and allows the stoichiometric melting of GaN. At pressures above 6.0 GPa, congruent melting of GaN occurred at about 2,220 degrees C, and decreasing the temperature allowed the GaN melt to crystallize to the original structure, which was confirmed by in situ X-ray diffraction. Single crystals of GaN were formed by cooling the melt slowly under high pressures and were recovered at ambient conditions.