Dicarboxylic Acid-Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short-Wave Infrared Photodetectors.

Heavy-metal-free III-V colloidal quantum dots (CQDs) are promising materials for solution-processed short-wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum-size effect tuning of the band gap. However, it has been challenging to achieve uniform InSb CQDs with band gaps below 0.9 eV, as well as to control the surface chemistry of these large-diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to ≥ ${\ge }$ 1400 nm light. Here we adopt solvent engineering to facilitate a diffusion-limited growth regime, leading to uniform CQDs with a band gap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate-halide co-passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25 % at 1400 nm, the highest among III-V CQD photodetectors in this spectral region.

Arresting Ion Migration from the ETL Increases Stability in Infrared Light Detectors Based on III-V Colloidal Quantum Dots.

III-V colloidal quantum dots (CQDs) are of interest in infrared photodetection, and recent developments in CQDs synthesis and surface engineering have improved performance. Here this work investigates photodetector stability, finding that the diffusion of zinc ions from charge transport layers (CTLs) into the CQDs active layer increases trap density therein, leading to rapid and irreversible performance loss during operation. In an effort to prevent this, this work introduces organic blocking layers between the CQDs and ZnO layers; but these negatively impact device performance. The device is then, allowing to use a C60:BCP as top electron-transport layer (ETL) for good morphology and process compatibility, and selecting NiOX as the bottom hole-transport layer (HTL). The first round of NiOX -based devices show efficient light response but suffer from high leakage current and a low open-circuit voltage (Voc) due to pinholes. This work introduces poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) with NiOX NC to form a hybrid HTL, an addition that reduces pinhole formation, interfacial trap density, and bimolecular recombination, enhancing carrier harvesting. The photodetectors achieve 53% external quantum efficiency (EQE) at 970 nm at 1 V applied bias, and they maintain 95% of initial performance after 19 h of continuous illuminated operation. The photodetectors retain over 80% of performance after 80 days of shelf storage.

2D Hybrid Perovskites Employing an Organic Cation Paired with a Neutral Molecule.

Two-dimensional (2D) hybrid perovskites harness the chemical and structural versatility of organic compounds. Here, we explore 2D perovskites that incorporate both a first organic component, a primary ammonium cation, and a second neutral organic module. Through the experimental examination of 42 organic pairs with a range of functional groups and organic backbones, we identify five crystallization scenarios that occur upon mixing. Only one leads to the cointercalation of the organic modules with distinct and extended interlayer spacing, which is observed with the aid of X-ray diffraction (XRD) pattern analysis combined with cross-sectional transmission electron microscopy (TEM) and elemental analysis. We present a picture in which complementary pairs, capable of forming intermolecular bonds, cocrystallize with multiple structural arrangements. These arrangements are a function of the ratio of organic content, annealing temperature, and substrate surface characteristics. We highlight how noncovalent bonds, particularly hydrogen and halogen bonding, enable the influence over the organic sublattice in hybrid halide perovskites.

Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids.

Heavy-metal-free III-V colloidal quantum dots (CQDs) show promise in optoelectronics: Recent advancements in the synthesis of large-diameter indium arsenide (InAs) CQDs provide access to short-wave infrared (IR) wavelengths for three-dimensional ranging and imaging. In early studies, however, we were unable to achieve a rectifying photodiode using CQDs and molybdenum oxide/polymer hole transport layers, as the shallow valence bandedge (5.0 eV) was misaligned with the ionization potentials of the widely used transport layers. This occurred when increasing CQD diameter to decrease the bandgap below 1.1 eV. Here, we develop a rectifying junction among InAs CQD layers, where we use molecular surface modifiers to tune the energy levels of InAs CQDs electrostatically. Previously developed bifunctional dithiol ligands, established for II-VI and IV-VI CQDs, exhibit slow reaction kinetics with III-V surfaces, causing the exchange to fail. We study carboxylate and thiolate binding groups, united with electron-donating free end groups, that shift upward the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV. Photophysical studies combined with density functional theory show that carboxylate-based passivants participate in strong bidentate bridging with both In and As on the CQD surface. The tuned CQD layer incorporated into a photodiode structure achieves improved performance with EQE (external quantum efficiency) of 35% (>1 µm) and dark current density < 400 nA cm-2, a >25% increase in EQE and >90% reduced dark current density compared to the reference device. This work represents an advance over previous III-V CQD short-wavelength IR photodetectors (EQE < 5%, dark current > 10,000 nA cm-2).

Low-loss contacts on textured substrates for inverted perovskite solar cells.

Inverted perovskite solar cells (PSCs) promise enhanced operating stability compared to their normal-structure counterparts1-3. To improve efficiency further, it is crucial to combine effective light management with low interfacial losses4,5. Here we develop a conformal self-assembled monolayer (SAM) as the hole-selective contact on light-managing textured substrates. Molecular dynamics simulations indicate that cluster formation during phosphonic acid adsorption leads to incomplete SAM coverage. We devise a co-adsorbent strategy that disassembles high-order clusters, thus homogenizing the distribution of phosphonic acid molecules, and thereby minimizing interfacial recombination and improving electronic structures. We report a laboratory-measured power conversion efficiency (PCE) of 25.3% and a certified quasi-steady-state PCE of 24.8% for inverted PSCs, with a photocurrent approaching 95% of the Shockley-Queisser maximum. An encapsulated device having a PCE of 24.6% at room temperature retains 95% of its peak performance when stressed at 65 °C and 50% relative humidity following more than 1,000 h of maximum power point tracking under 1 sun illumination. This represents one of the most stable PSCs subjected to accelerated ageing: achieved with a PCE surpassing 24%. The engineering of phosphonic acid adsorption on textured substrates offers a promising avenue for efficient and stable PSCs. It is also anticipated to benefit other optoelectronic devices that require light management.

Closed-Loop Error-Correction Learning Accelerates Experimental Discovery of Thermoelectric Materials.

The exploration of thermoelectric materials is challenging considering the large materials space, combined with added exponential degrees of freedom coming from doping and the diversity of synthetic pathways. Here, historical data is incorporated, and is updated using experimental feedback by employing error-correction learning (ECL). This is achieved by learning from prior datasets and then adapting the model to differences in synthesis and characterization that are otherwise difficult to parameterize. This strategy is thus applied to discovering thermoelectric materials, where synthesis is prioritized at temperatures <300 °C. A previously unexplored chemical family of thermoelectric materials, PbSe:SnSb, is documented, finding that the best candidate in this chemical family, 2 wt% SnSb doped PbSe, exhibits a power factor more than 2× that of PbSe. The investigations herein reveal that a closed-loop experimentation strategy reduces the required number of experiments to find an optimized material by a factor as high as 3× compared to high-throughput searches powered by state-of-the-art machine-learning (ML) models. It is also observed that this improvement is dependent on the accuracy of the ML model in a manner that exhibits diminishing returns: once a certain accuracy is reached, factors that are instead associated with experimental pathways begin to dominate trends.

Electron-Transport Layers Employing Strongly Bound Ligands Enhance Stability in Colloidal Quantum Dot Infrared Photodetectors.

Solution-processed photodetectors based on colloidal quantum dots (CQDs) are promising candidates for short-wavelength infrared light sensing applications. Present-day CQD photodetectors employ a CQD active layer sandwiched between carrier-transport layers in which the electron-transport layer (ETL) is composed of metal oxides. Herein, a new class of ETLs is developed using n-type CQDs, finding that these benefit from quantum-size effect tuning of the band energies, as well as from surface ligand engineering. Photodetectors operating at 1450 nm are demonstrated using CQDs with tailored functionalities for each of the transport layers and the active layer. By optimizing the band alignment between the ETL and the active layer, CQD photodetectors that combine a low dark current of ≈1 × 10-3 mA cm-2 with a high external quantum efficiency of ≈66% at 1 V are reported, outperforming prior reports of CQD photodetectors operating at >1400 nm that rely on metal oxides as ETLs. It is shown that stable CQD photodetectors rely on well-passivated CQDs: for ETL CQDs, a strongly bound organic ligand trans-4-(trifluoromethyl)cinnamic acid (TFCA) provides improved passivation compared to the weakly bound inorganic ligand tetrabutylammonium iodide (TBAI). TFCA suppresses bias-induced ion migration inside the ETL and improves the operating stability of photodetectors by 50× compared to TBAI.

Quantum-Size-Effect Tuning Enables Narrowband IR Photodetection with Low Sunlight Interference.

Infrared photodetection enables depth imaging techniques such as structured light and time-of-flight. Traditional photodetectors rely on silicon (Si); however, the bandgap of Si limits photodetection to wavelengths shorter than 1100 nm. Photodetector operation centered at 1370 nm benefits from lower sunlight interference due to atmospheric absorption. Here, we report 1370 nm-operating colloidal quantum dot (CQD) photodetectors and evaluate their outdoor performance. We develop a surface-ligand engineering strategy to tune the electronic properties of each CQD layer and fabricate photodetectors in an inverted (PIN) architecture. The strategy enables photodetectors with an external quantum efficiency of 75% and a low dark current (1 µA/cm2). Outdoor testing demonstrates that CQD-based photodetectors combined with a 10 nm-line width bandpass filter centered at 1370 nm achieve over 2 orders of magnitude (140× at incident intensity 1 µW/cm2) higher signal-to-background ratio than do Si-based photodetectors that use an analogous bandpass filter centered at 905 nm.

Fast Near-Infrared Photodetection Using III-V Colloidal Quantum Dots.

Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II-VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III-Vs-if their surface chemistry can be mastered-offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm2 V-1 s-1 ) with a 4× reduction in permittivity compared to PbS CQDs. The resulting photodiodes achieve a response time faster than 2 ns-the fastest photodiode among previously reported CQD photodiodes-combined with an external quantum efficiency (EQE) of 30% at 940 nm.

Controlled Crystal Plane Orientations in the ZnO Transport Layer Enable High-Responsivity, Low-Dark-Current Infrared Photodetectors.

Colloidal quantum dots (CQD) have emerged as attractive materials for infrared (IR) photodetector (PD) applications because of their tunable bandgaps and facile processing. Presently, zinc oxide is the electron-transport layer (ETL) of choice in CQD PDs; however, ZnO relies on continuous ultraviolet (UV) illumination to remove adsorbed oxygen and maintain high external quantum efficiency (EQE), speed, and photocurrent. Here, it is shown that ZnO is dominated by electropositive crystal planes which favor excessive oxygen adsorption, and that this leads to a high density of trap states, an undesired shift in band alignment, and consequent poor performance. Over prolonged operation without UV exposure, oxygen accumulates at the electropositive planes, trapping holes and degrading performance. This problem is addressed by developing an electroneutral plane composition at the ZnO surface, aided by atomic layer deposition (ALD) as the means of materials processing. It is found that ALD ZnO has 10× lower binding energy for oxygen than does conventionally deposited ZnO. IR CQD PDs made with this ETL do not require UV activation to maintain low dark current and high EQE.

Passivation of the Buried Interface via Preferential Crystallization of 2D Perovskite on Metal Oxide Transport Layers.

The open-circuit voltage (Voc ) of perovskite solar cells is limited by non-radiative recombination at perovskite/carrier transport layer (CTL) interfaces. 2D perovskite post-treatments offer a means to passivate the top interface; whereas, accessing and passivating the buried interface underneath the perovskite film requires new material synthesis strategies. It is posited that perovskite ink containing species that bind strongly to substrates can spontaneously form a passivating layer with the bottom CTL. The concept using organic spacer cations with rich NH2 groups is implemented, where readily available hydrogens have large binding affinity to under-coordinated oxygens on the metal oxide substrate surface, inducing preferential crystallization of a thin 2D layer at the buried interface. The passivation effect of this 2D layer is examined using steady-state and time-resolved photoluminescence spectroscopy: the 2D interlayer suppresses non-radiative recombination at the buried perovskite/CTL interface, leading to a 72% reduction in surface recombination velocity. This strategy enables a 65 mV increase in Voc for NiOx based p-i-n devices, and a 100 mV increase in Voc for SnO2 -based n-i-p devices. Inverted solar cells with 20.1% power conversion efficiency (PCE) for 1.70 eV and 22.9% PCE for 1.55 eV bandgap perovskites are demonstrated.

Facet-Oriented Coupling Enables Fast and Sensitive Colloidal Quantum Dot Photodetectors.

Charge carrier transport in colloidal quantum dot (CQD) solids is strongly influenced by coupling among CQDs. The shape of as-synthesized CQDs results in random orientational relationships among facets in CQD solids, and this limits the CQD coupling strength and the resultant performance of optoelectronic devices. Here, colloidal-phase reconstruction of CQD surfaces, which improves facet alignment in CQD solids, is reported. This strategy enables control over CQD faceting and allows demonstration of enhanced coupling in CQD solids. The approach utilizes post-synthetic resurfacing and unites surface passivation and colloidal stability with a propensity for dots to couple via (100):(100) facets, enabling increased hole mobility. Experimentally, the CQD solids exhibit a 10× increase in measured hole mobility compared to control CQD solids, and enable photodiodes (PDs) exhibiting 70% external quantum efficiency (vs 45% for control devices) and specific detectivity, D* > 1012  Jones, each at 1550 nm. The photodetectors feature a 7 ns response time for a 0.01 mm2 area-the fastest reported for solution-processed short-wavelength infrared PDs.

Deep-Blue Perovskite Single-Mode Lasing through Efficient Vapor-Assisted Chlorination.

Metal halide perovskites have emerged as promising candidates for solution-processed laser gain materials, with impressive performance in the green and red spectral regions. Despite exciting progress, deep-blue-an important wavelength for laser applications-remains underexplored; indeed, cavity integration and single-mode lasing from large-bandgap perovskites have yet to be achieved. Here, a vapor-assisted chlorination strategy that enables synthesis of low-dimensional CsPbCl3  thin films exhibiting deep-blue emission is reported. Using this approach,  high-quality perovskite thin films having a low surface roughness (RMS ≈ 1.3 nm) and efficient charge transfer properties are achieved. These enable us to document low-threshold amplified spontaneous emission. Levering the high quality of the gain medium,  vertical-cavity surface-emitting lasers with a low lasing threshold of 6.5 µJ cm-2  are fabricated. This report of deep-blue perovskite single-mode lasing showcases the prospect of increasing the range of deep-blue laser sources.

Orthogonal colloidal quantum dot inks enable efficient multilayer optoelectronic devices.

Surface ligands enable control over the dispersibility of colloidal quantum dots (CQDs) via steric and electrostatic stabilization. Today's device-grade CQD inks have consistently relied on highly polar solvents: this enables facile single-step deposition of multi-hundred-nanometer-thick CQD films; but it prevents the realization of CQD film stacks made up of CQDs having different compositions, since polar solvents redisperse underlying films. Here we introduce aromatic ligands to achieve process-orthogonal CQD inks, and enable thereby multifunctional multilayer CQD solids. We explore the effect of the anchoring group of the aromatic ligand on the solubility of CQD inks in weakly-polar solvents, and find that a judicious selection of the anchoring group induces a dipole that provides additional CQD-solvent interactions. This enables colloidal stability without relying on bulky insulating ligands. We showcase the benefit of this ink as the hole transport layer in CQD optoelectronics, achieving an external quantum efficiency of 84% at 1210 nm.

Micron Thick Colloidal Quantum Dot Solids.

Shortwave infrared colloidal quantum dots (SWIR-CQDs) are semiconductors capable of harvesting across the AM1.5G solar spectrum. Today's SWIR-CQD solar cells rely on spin-coating; however, these films exhibit cracking once thickness exceeds ∼500 nm. We posited that a blade-coating strategy could enable thick QD films. We developed a ligand exchange with an additional resolvation step that enabled the dispersion of SWIR-CQDs. We then engineered a quaternary ink that combined high-viscosity solvents with short QD stabilizing ligands. This ink, blade-coated over a mild heating bed, formed micron-thick SWIR-CQD films. These SWIR-CQD solar cells achieved short-circuit current densities (Jsc) that reach 39 mA cm-2, corresponding to the harvest of 60% of total photons incident under AM1.5G illumination. External quantum efficiency measurements reveal both the first exciton peak and the closest Fabry-Perot resonance peak reaching approximately 80%-this is the highest unbiased EQE reported beyond 1400 nm in a solution-processed semiconductor.

Ligand-Assisted Reconstruction of Colloidal Quantum Dots Decreases Trap State Density.

Increasing the power conversion efficiency (PCE) of colloidal quantum dot (CQD) solar cells has relied on improving the passivation of CQD surfaces, enhancing CQD coupling and charge transport, and advancing device architecture. The presence of hydroxyl groups on the nanoparticle surface, as well as dimers-fusion between CQDs-has been found to be the major source of trap states, detrimental to optoelectronic properties and device performance. Here, we introduce a CQD reconstruction step that decreases surface hydroxyl groups and dimers simultaneously. We explored the dynamic interaction of charge carriers between band-edge states and trap states in CQDs using time-resolved spectroscopy, showing that trap to ground-state recombination occurs mainly from surface defects in coupled CQD solids passivated using simple metal halides. Using CQD reconstruction, we demonstrate a 60% reduction in trap density and a 25% improvement in charge diffusion length. These translate into a PCE of 12.5% compared to 10.9% for control CQDs.

Multi-cation perovskites prevent carrier reflection from grain surfaces.

The composition of perovskite has been optimized combinatorially such that it often contains six components (AxByC1-x-yPbXzY3-z) in state-of-art perovskite solar cells. Questions remain regarding the precise role of each component, and the lack of a mechanistic explanation limits the practical exploration of the large and growing chemical space. Here, aided by transient photoluminescence microscopy, we find that, in perovskite single crystals, carrier diffusivity is in fact independent of composition. In polycrystalline thin films, the different compositions play a crucial role in carrier diffusion. We report that methylammonium (MA)-based films show a high carrier diffusivity of 0.047 cm2 s-1, while MA-free mixed caesium-formamidinium (CsFA) films exhibit an order of magnitude lower diffusivity. Elemental composition studies show that CsFA grains display a graded composition. This curtails electron diffusion in these films, as seen in both vertical carrier transport and surface potential studies. Incorporation of MA leads to a uniform grain core-to-edge composition, giving rise to a diffusivity of 0.034 cm2 s-1 in CsMAFA films. A model that invokes competing crystallization processes allows us to account for this finding, and suggests further strategies to achieve homogeneous crystallization for the benefit of perovskite optoelectronics.