1.
Opt Lett
; 38(24): 5434-7, 2013 Dec 15.
Artigo
em Inglês
| MEDLINE
| ID: mdl-24343010
RESUMO
Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.
