Reconfigurable radio-frequency arbitrary waveforms synthesized in a silicon photonic chip.

Photonic methods of radio-frequency waveform generation and processing can provide performance advantages and flexibility over electronic methods due to the ultrawide bandwidth offered by the optical carriers. However, bulk optics implementations suffer from the lack of integration and slow reconfiguration speed. Here we propose an architecture of integrated photonic radio-frequency generation and processing and implement it on a silicon chip fabricated in a semiconductor manufacturing foundry. Our device can generate programmable radio-frequency bursts or continuous waveforms with only the light source, electrical drives/controls and detectors being off-chip. It modulates an individual pulse in a radio-frequency burst within 4 ns, achieving a reconfiguration speed three orders of magnitude faster than thermal tuning. The on-chip optical delay elements offer an integrated approach to accurately manipulating individual radio-frequency waveform features without constraints set by the speed and timing jitter of electronics, and should find applications ranging from high-speed wireless to defence electronics.

Bandwidth scaling of a phase-modulated continuous-wave comb through four-wave mixing in a silicon nano-waveguide.

We demonstrate an on-chip four-wave mixing (FWM) scheme in a silicon nanowaveguide to scale the bandwidth of a frequency comb generated by phase modulation of continuous-wave (CW) lasers. The FWM process doubles the bandwidth of the initial comb generated by the modulation of a CW laser. For example, a wavelength-tunable frequency comb with >100 comb lines spaced by 10 GHz within a bandwidth of 5 dB is generated.

One-way transmission of 10 Gbps data through a silicon optical diode based on nonreciprocal resonance reshaping.

The reduced optical bandwidth associated with resonance enhancement poses a significant challenge for resonators to process wide-bandwidth optical data. We report one-way transmission of 10 giga-bit-per-second optical data through a silicon optical diode based on both the resonance-enhanced optical nonlinear effects and resonance reshaping. The diode is operated with a forward-only or backward-only input. In the backward direction, the diode corrupts the data through the strong dispersion and attenuation associated with the resonance of a microring. In the forward direction, the data pass through the diode with negligible distortions because the resonance is red-shifted from the carrier wavelength. In this experimental context the finite bandwidth associated with the optical resonance may be considered beneficial, since the phase response makes an additional contribution to transmission nonreciprocity beyond what is seen with unmodulated light.

Nanoimprinted plasmonic nanocavity arrays.

We demonstrate high resonant absorption of visible light with a plasmonic nanocavity chain structure fabricated through resistless nanoimprinting in metal (RNIM). The RNIM approach provides a simple, reproducible, and accurate means to fabricate metallic nanopatterns with high fidelity. The nanocavities are shown to be efficiently excited using normally incident light, and the resonant wavelength can be controlled by either the width or the depth of the cavity. Numerical simulations confirm the experimental observations, and illustrate the behavior of the nanocavity chain waveguide and insensitivity to incident angle. The resonant absorption is due to the excitation of a localized metal-insulator-metal cavity mode. The interacting surface waves allow cavity lengths on the order of ten nanometers for light having a free space wavelength of about four hundred nanometers. Coupling of the cavities with an intervening surface plasmon wave results in a collective excitation and a chain waveguide mode that should prove valuable for more sensitive detection based on surface enhanced Raman scattering.

Rapid and low-cost prototyping of 3D nanostructures with multi-layer hydrogen silsesquioxane scaffolds.

A layer-by-layer (LBL) method can generate or approximate any three-dimensional (3D) structure, and has been the approach for the manufacturing of complementary metal-oxide-semiconductor (CMOS) devices. However, its high cost precludes the fabrication of anything other than CMOS-compatible devices, and general 3D nanostructures have been difficult to prototype in academia and small businesses, due to the lack of expensive facility and state-of-the-art tools. It is proposed and demonstrated that a novel process that can rapidly fabricate high-resolution three-dimensional (3D) nanostructures at low cost, without requiring specialized equipment. An individual layer is realized through electron-beam lithography patterning of hydrogen silsesquioxane (HSQ) resist, followed by planarization via spinning SU-8 resist and etch-back. A 4-layer silicon inverse woodpile photonic crystal with a period of 650 nm and a 7-layer HSQ scaffold with a period of 300 nm are demonstrated. This process provides a versatile and accessible solution to the fabrication of highly complex 3D nanostructures.

Resistless nanoimprinting in metal for plasmonic nanostructures.

Metal nanostructures are the main building blocks of metamaterials and plasmonics which show many extraordinary properties not existing in nature. A simple and widely applicable method that can directly pattern metals with silicon molds without the need of resists, using pressures of <4 MPa and temperatures of 25-150 °C is reported. Three-dimensional structures with smooth and vertical sidewalls, down to sub-10 nm resolution, are generated in silver and gold films in a single patterning step. Using this nanopatterning scheme, large-scale vivid images through extraordinary optical transmission and strong surface-enhanced Raman scattering substrates are realized. Resistless nanoimprinting in metal (RNIM) is a new class of metal patterning that allows plasmonic nanostructures to be fabricated quickly, repeatedly, and at a low-cost.

Silicon optical diode with 40 dB nonreciprocal transmission.

A passive all-silicon optical diode is demonstrated to realize a record high nonreciprocal transmission ratio (NTR) of 40 dB. Individual microrings that make up the device are experimentally studied to explain the nonlinear power dynamics. There is a compromise between the NTR and insertion loss, and possible solutions for further improvements are discussed. This work provides a way to realize extremely high optical nonreciprocity on chip for optical information processing applications.

Direct fabrication of silicon photonic devices on a flexible platform and its application for strain sensing.

We demonstrate a process to fabricate silicon photonic devices directly on a plastic film which is both flexible and transparent. This process allows the integration of complex structures on plastic films without the need of transferring from another substrate. Waveguides, grating couplers, and microring resonators are fabricated and optically characterized. An optical strain sensor is shown as an application using 5 µm-radius microring resonators on the flexible substrate. When strain is applied, resonance wavelength shifts of the microring resonators are observed. Contributions of different effects are analyzed and evaluated. Finally, we measure the influence of residual strain and confirm the material undergoes elastic deformation within the applied strain range.

An all-silicon passive optical diode.

A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

40 dB Optical Nonreciprocal Transmission on a Silicon Chip.

We demonstrate 40 dB nonreciprocal transmission at telecommunication wavelengths using an integrated all silicon optical diode. The nonreciprocal transmission ratio is the highest to date for CMOS compatible silicon integrated photonics.

Nonreciprocal Transmission of 10 Gbps OOK Data through an All-Silicon Passive Optical Diode.

An optical diode transmits forward 10Gbps data with less than 0.5dB power penalty, while suppressing and distorting backward data with a 11dB nominal power penalty. The nonreciprocal transmission is also demonstrated with a silicon modulator.

A Silicon Optical Transistor.

We demonstrate an all-optical transistor with the modulated output signal simultaneously having an output/input ratio > 3 dB and ON/OFF ratio > 20 dB. The microring based device is ultra-compact and CMOS compatible.

Eight-channel reconfigurable microring filters with tunable frequency, extinction ratio and bandwidth.

We demonstrate an eight-channel reconfigurable optical filter on a silicon chip. It consists of cascaded microring resonators and integrated compact heaters. With an embedded Mach-Zehnder (MZ) arm coupling to a microring resonator, the important parameters of a filter such as center frequency, extinction ratio and bandwidth can be controlled simultaneously for purposes of filtering, routing and spectral shaping. Thus our device could potentially be useful in dense wavelength division multiplexing (DWDM) and radio frequency arbitrary waveform generation (RFAWG). Multichannel filter response was successfully tuned to match the International Telecommunication Unit (ITU) grid with 50, 100 and 200 GHz in channel spacing. Programmable channel selectivity was demonstrated by heating the MZ arm, and continuous adjustment of through-port extinction ratio from 0 dB to 27 dB was achieved. Meanwhile, the 3 dB bandwidth in the drop port changed from 0.12 nm to 0.16 nm. The device had an ultra-compact footprint (1200 microm x 100 microm) excluding the metal leads and contact pads, making it suitable for large scale integration.