RESUMO
We report results of high-resolution sputter depth profiling of an alternating MgO/ZnO nanolayer stack grown by atomic layer deposition (ALD) of ≈5.5 nm per layer. We used an improved dual beam time-of-flight secondary ion mass spectrometer to measure (24)Mg(+) and (64)Zn(+) intensities as a function of sample depth. Analysis of depth profiles by the mixing-roughness-information model yields a 1.5 nm nanolayer interfacial roughness within the MgO/ZnO multilayer. This finding was cross-validated using specular x-ray reflectivity. Such an analysis further suggested that the 1.5 nm roughness corresponds to native/jig-sawed interfacial roughness rather than interfacial interdiffusion during the ALD growth.
RESUMO
A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si(n)(-) and Cu(n)(-). Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.