Goos-Hänchen shift for coupled vibrational modes in a semiconductor structure.

We present a theoretical investigation of the Goös-Hanchen shift (GHS) experienced by acoustic and optical vibrational modes reflected and transmitted from the surfaces of a semiconductor thin film sandwiched between two semi-infinite media. Our study focuses on the impact of the incident angle on the GHS, considering the coupling between longitudinal and transverse modes. For acoustic vibrations, our findings reveal that the GHS can reach magnitudes up to seven times larger than the thickness of the thin film and up to 20 times larger than the incident wavelength. Besides, it is shown that this significant amplification of the GHS highlights the strong influence of the incident angle and the frequency of the modes involved. In the case of optical vibrations, we observe even more pronounced GHS values, exceeding 30 times the incident wavelength. This demonstrates the potential of GHS in acoustical systems, which opens up possibilities for applications in the design of acoustic devices.

Goos-Hänchen effect for optical vibrational modes in a semiconductor structure.

We study the tunneling of optical vibrational modes with transverse horizontal polarization that impinge, at a given angle, on a semiconductor heterostructure. We find a large influence of the Goos-Hänchen shift on tunneling times. In particular, a Goos-Hänchen shift larger than the barrier thickness is reported for the first time. The relation between Goos-Hänchen and Hartman effects is also discussed. The identity that equals the dwell time to the sum of transmission and interference times, previously derived for one-dimensional tunneling problems, is extended to the two-dimensional case. Closed-form expressions are developed for the relevant quantities. Instead of using the standard approach, the interference time is computed from the vibrational energy density. The present study could be useful for the design of semiconductor devices.

Tunneling times of acoustic phonon packets through a distributed Bragg reflector.

The longwave phenomenological model is used to make simple and precise calculations of various physical quantities such as the vibrational energy density, the vibrational energy, the relative mechanical displacement, and the one-dimensional stress tensor of a porous silicon distributed Bragg reflector. From general principles such as invariance under time reversal, invariance under space reflection, and conservation of energy density flux, the equivalence of the tunneling times for both transmission and reflection is demonstrated. Here, we study the tunneling times of acoustic phonon packets through a distributed Bragg reflector in porous silicon multilayer structures, and we report the possibility that a phenomenon called Hartman effect appears in these structures.