Eliminating Quantum Phase Slips in Superconducting Nanowires.

In systems with reduced dimensions, quantum fluctuations have a strong influence on the electronic conduction, even at very low temperatures. In superconductors, this is especially interesting, since the coherent state of the superconducting electrons strongly interacts with these fluctuations and therefore is a sensitive tool to study them. In this paper, we report on comprehensive measurements of superconducting nanowires in the quantum phase slip regime. Using an intrinsic electromigration process, we have developed a method to lower the nanowire's resistance in situ and therefore eliminate quantum phase slips in small consecutive steps. We observe critical (Coulomb) blockade voltages and superconducting critical currents, in good agreement with theoretical models. Between these two regimes, we find a continuous transition displaying a nonlinear metallic-like behavior. The reported intrinsic electromigration technique is not limited to low temperatures, as we find a similar change in resistance that spans over 3 orders of magnitude also at room temperature. Aside from superconducting quantum circuits, such a technique to reduce the resistance may also have applications in modern electronic circuits.

Current-Resistance Effects Inducing Nonlinear Fluctuation Mechanisms in Granular Aluminum Oxide Nanowires.

The unusual superconducting properties of granular aluminum oxide have been recently investigated for application in quantum circuits. However, the intrinsic irregular structure of this material requires a good understanding of the transport mechanisms and, in particular, the effect of disorder, especially when patterned at the nanoscale level. In view of these aspects, electric transport and voltage fluctuations have been investigated on thin-film based granular aluminum oxide nanowires, in the normal state and at temperatures between 8 and 300 K. The nonlinear resistivity and two-level tunneling fluctuators have been observed. Regarding the nature of the noise processes, the experimental findings give a clear indication in favor of a dynamic random resistor network model, rather than the possible existence of a local ordering of magnetic origin. The identification of the charge carrier fluctuations in the normal state of granular aluminum oxide nanowires is very useful for improving the fabrication process and, therefore, reducing the possible sources of decoherence in the superconducting state, where quantum technologies that are based on these nanostructures should work.