RESUMO
Normal-incidence infrared absorption has been observed for silver overlaid C(60) thin films formed on surface-oxidized Si(111) substrates as a function of the silver or C(60) film thickness. The absorption spectra exhibit bands at 1429 and 1180 cm(-1) due, respectively, to the infrared active T(lu) (4) and T(lu) (3) modes of C(60) in multi-layers. Additionally, two bands appear at 1442 and 1370 cm(-1). The former band is caused by activation of the infrared inactive (Raman active) A(g) (2) mode via electron transfer from the silver to adsorbed C(60), and the latter is assigned to the T(1u) (4) mode red-shifted by the charge transfer. These bands are all enhanced in intensity dependent either upon the silver or C(60) thickness, i.e., the largest absorption enhancement is obtained for 25-monolayers-thick silver and 12-nm-thick C(60). Under atomic force microprobe inspection, the average size and height of the islands in the overlaid 25-monolayers-thick silver change with underlying C(60) film thickness. The influence of the C(60) film structure upon the silver film and in turn the absorption intensity is strongly suggested.