An epitaxial graphene platform for zero-energy edge state nanoelectronics.

Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.

Imaging tunable quantum Hall broken-symmetry orders in graphene.

ABSTARCT: When electrons populate a flat band their kinetic energy becomes negligible, forcing them to organize in exotic many-body states to minimize their Coulomb energy1-5. The zeroth Landau level of graphene under a magnetic field is a particularly interesting strongly interacting flat band because interelectron interactions are predicted to induce a rich variety of broken-symmetry states with distinct topological and lattice-scale orders6-11. Evidence for these states stems mostly from indirect transport experiments that suggest that broken-symmetry states are tunable by boosting the Zeeman energy12 or by dielectric screening of the Coulomb interaction13. However, confirming the existence of these ground states requires a direct visualization of their lattice-scale orders14. Here we image three distinct broken-symmetry phases in graphene using scanning tunnelling spectroscopy. We explore the phase diagram by tuning the screening of the Coulomb interaction by a low- or high-dielectric-constant environment, and with a magnetic field. In the unscreened case, we find a Kekulé bond order, consistent with observations of an insulating state undergoing a magnetic-field driven Kosterlitz-Thouless transition15,16. Under dielectric screening, a sublattice-unpolarized ground state13 emerges at low magnetic fields, and transits to a charge-density-wave order with partial sublattice polarization at higher magnetic fields. The Kekulé and charge-density-wave orders furthermore coexist with additional, secondary lattice-scale orders that enrich the phase diagram beyond current theory predictions6-10. This screening-induced tunability of broken-symmetry orders may prove valuable to uncover correlated phases of matter in other quantum materials.

Non-Invasive Nanoscale Potentiometry and Ballistic Transport in Epigraphene Nanoribbons.

The recent observation of non-classical electron transport regimes in two-dimensional materials has called for new high-resolution non-invasive techniques to locally probe electronic properties. We introduce a novel hybrid scanning probe technique to map the local resistance and electrochemical potential with nm- and µV resolution, and we apply it to study epigraphene nanoribbons grown on the sidewalls of SiC substrate steps. Remarkably, the potential drop is non-uniform along the ribbons, and µm-long segments show no potential variation with distance. The potential maps are in excellent agreement with measurements of the local resistance. This reveals ballistic transport, compatible with µm-long room-temperature electronic mean-free paths.