Excellent microwave absorption property of Graphene-coated Fe nanocomposites.

Graphene has evoked extensive interests for its abundant physical properties and potential applications. It is reported that the interfacial electronic interaction between metal and graphene would give rise to charge transfer and change the electronic properties of graphene, leading to some novel electrical and magnetic properties in metal-graphene heterostructure. In addition, large specific surface area, low density and high chemical stability make graphene act as an ideal coating material. Taking full advantage of the aforementioned features of graphene, we synthesized graphene-coated Fe nanocomposites for the first time and investigated their microwave absorption properties. Due to the charge transfer at Fe-graphene interface in Fe/G, the nanocomposites show distinct dielectric properties, which result in excellent microwave absorption performance in a wide frequency range. This work provides a novel approach for exploring high-performance microwave absorption material as well as expands the application field of graphene-based materials.

Electric control of magnetism at room temperature.

In the single-phase multiferroics, the coupling between electric polarization (P) and magnetization (M) would enable the magnetoelectric (ME) effect, namely M induced and modulated by E, and conversely P by H. Especially, the manipulation of magnetization by an electric field at room-temperature is of great importance in technological applications, such as new information storage technology, four-state logic device, magnetoelectric sensors, low-power magnetoelectric device and so on. Furthermore, it can reduce power consumption and realize device miniaturization, which is very useful for the practical applications. In an M-type hexaferrite SrCo(2)Ti(2)Fe(8)O(19), large magnetization and electric polarization were observed simultaneously at room-temperature. Moreover, large effect of electric field-controlled magnetization was observed even without magnetic bias field. These results illuminate a promising potential to apply in magnetoelectric devices at room temperature and imply plentiful physics behind them.