Synergistic Assistance of Ir Clusters and NiCo2O4 Nanosheets Interfaces in Direct O-O Coupling for High-Efficiency Alkaline Oxygen Evolution.

Adopting noble metals on non-noble metals is an effective strategy to balance the cost and activity of electrocatalysts. Herein, a thorough analysis of the synergistic OER is conducted at the heterogeneous interface formed by Ir clusters and NiCo2O4 based on DFT calculations. Specifically, the electrons spontaneously bring an eg occupancy of interfacial Ir close to unity after the absorbed O, providing more transferable electrons for the conversion of the absorbed O-intermediates. Besides, the diffuse distribution of electrons in the Ir 5d orbital fills the antibonding orbital after O is absorbed, avoiding the desorption difficulties caused by the stronger Ir-O bonds. The electrons transfer from Ir to Co atoms at the heterogeneous interface and fill the Co 3d band near the Fermi level, stimulating the interfacial Co to participate in the direct O-O coupling (DOOC) pathway. Experimentally, the ultrathin-modulated NiCo2O4 nanosheets are used to support Ir clusters (Ircluster-E-NiCo2O4) by the electrodeposition method. The as-synthesized Ircluster-E-NiCo2O4 catalyst achieves a current density of 10 mA cm-2 at an ultralow overpotential of 238 mV and works steadily for 100 h under a high current of 100 mA cm-2, benefiting from the efficient DOOC pathway during the OER.

Electrical-gate-controlled giant tunneling magnetoresistance and its quasi-periodic oscillation in an interlaced magnetic-electric silicene superlattice.

In this work, we propose a silicene-based lateral resonant tunneling device by placing silicene under the superlattices interlaced, arranged by ferromagnetic gates and electric gates. Its ballistic transport properties are calculated by the transfer matrix method. Combined with the unique electrically tuned energy gap of silicene, its magnetoresistance (MR) can be exaggeratedly modulated over a wide range by applying electrostatic potential and the on-site potential difference. It is interestingly found that there is a quasi-periodic oscillation of the MR in silicene-based superlattice devices from the quantum resonant confinement of the band splitting by the electrostatic field. Moreover, the peak of the MR in a single-period structure can reach more than 104, while the peak of the MR in an interlaced alternating magnetic-electric silicene superlattice can reach more than 1017, which is one of the best-reported values. This may originate from the enhancement effect of the wave vector filtering by the controlled field. Our studies indicate that the silicene superlattices alternately arranged by the ferromagnetic gate and electric gate not only have giant MR (GMR) properties, but also exhibit the periodic oscillation characteristics of MR in which electric gates can be modulated. Therefore, this work provides a more flexible strategy for the construction of silicene-based nanoelectronic devices.

GaOx@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity.

Flexible optoelectronic synaptic devices that functionally imitate the neural behavior with tunable optoelectronic characteristics are crucial to the development of advanced bioinspired neural networks. In this work, amorphous oxide-decorated GaN nanowire arrays (GaOx@GaN NWAs) are prepared on flexible graphite paper. A GaOx@GaN NWA-based flexible device has tunable persistent photoconductivity (PPC) and shows a conversible fast/slow decay process (SDP). Photoconductivity can be modulated by single or double light pulses with different illumination powers and biases. PPC gives rise to the high-performance SDP such as a long decay time of 2.3 × 105 s. The modulation mechanism is proposed and discussed. Our results reveal an innovative and efficient strategy to produce decorated NWAs on a flexible substrate with tunable optoelectronic properties and exhibit potential for flexible neuromorphic system applications.

An atomistic mechanism study of GaN step-flow growth in vicinal m-plane orientations.

Elucidation of homoepitaxial growth mechanisms on vicinal non-polar surfaces of GaN is highly important for gaining an understanding of and control thin film surface morphology and properties. Using first-principles calculations, we study the step-flow growth in m-plane GaN based on atomic row nucleation and kink propagation kinetics. Ga-N dimer adsorption onto the m-plane is energetically more favorable than that of Ga and N isolated adatoms. Therefore, we have treated the dimers as the dominant growth species attached to the step edges. By calculating the free energies of sequentially attached Ga-N dimers, we have elucidated that the a-step edge kink growth proceeds by parallel attachment rather than by across the step edge approach. We found a series of favorable configurations of kink propagation and calculated the free energy and nucleation barriers for kink evolution on five types of step edges (a, +c, -c, +a + c, and -a - c). By changing the chemical potential µGa and the excess chemical potential Δµ, the growth velocities at the five types of edges are controlled by the corresponding kink pair nucleation barrier E* in their free energy profiles. To explore the kink-flow growth instability observed at different Ga/N flux ratios, calculations of kink pairs on the incompact -c and +c-step edges are further performed to study their formation energies. Variations of these step edge morphologies with a tuned chemical environment are consistent with previous experimental observations, including stable diagonal ±a ± c-direction steps. Our work provides a first-principles approach to explore step growth and surface morphology of the vicinal m-plane GaN, which is applicable to analyze and control the step-flow growth of other binary thin films.

Elastic Properties, Defect Thermodynamics, Electrochemical Window, Phase Stability, and Li(+) Mobility of Li3PS4: Insights from First-Principles Calculations.

The improved ionic conductivity (1.64 × 10(-4) S cm(-1) at room temperature) and excellent electrochemical stability of nanoporous ß-Li3PS4 make it one of the promising candidates for rechargeable all-solid-state lithium-ion battery electrolytes. Here, elastic properties, defect thermodynamics, phase diagram, and Li(+) migration mechanism of Li3PS4 (both γ and ß phases) are examined via the first-principles calculations. Results indicate that both γ- and ß-Li3PS4 phases are ductile while γ-Li3PS4 is harder under volume change and shear stress than ß-Li3PS4. The electrochemical window of Li3PS4 ranges from 0.6 to 3.7 V, and thus the experimentally excellent stability (>5 V) is proposed due to the passivation phenomenon. The dominant diffusion carrier type in Li3PS4 is identified over its electrochemical window. In γ-Li3PS4 the direct-hopping of Lii(+) along the [001] is energetically more favorable than other diffusion processes, whereas in ß-Li3PS4 the knock-off diffusion of Lii(+) along the [010] has the lowest migration barrier. The ionic conductivity is evaluated from the concentration and the mobility calculations using the Nernst-Einstein relationship and compared with the available experimental results. According to our calculated results, the Li(+) prefers to transport along the [010] direction. It is suggested that the enhanced ionic conductivity in nanostructured ß-Li3PS4 is due to the larger possibility of contiguous (010) planes provided by larger nanoporous ß-Li3PS4 particles. By a series of motivated and closely linked calculations, we try to provide a portable method, by which researchers could gain insights into the physicochemical properties of solid electrolyte.

Defects in AIN/GaN Superlattice: First Principle Calculations.

In this paper we investigate the atomic configurations, electronic structure and formation energies of native point defects, (such as vacancies and self-interstitials), in an AIN/GaN superlattice (SL) constructed on a wurtzite structure along a [0001] growth direction. Comprehensive first-principle calculations based on the density functional theory (DFT) are used. Cation and anion vacancies in the neutral charge state are calculated. For the native defects, the results showed that the most favorable configurations are the cation vacancies at the interface of the SL, or the anion vacancies in the GaN wells. Considering the formation energies of different vacancies, the results show that the nitrogen vacancy has the lowest formation energy, indicating that they are significantly the most stable configuration, and thus should be expected to be the major defect in a AIN/GaN superlattice.

Engineering of hydrogenated two-dimensional h-BN/C superlattices as electrostatic substrates.

Hybridized two-dimensional materials incorporating domains from the hexagonal boron nitride (h-BN) and graphene is an interesting branch of materials science due to their highly tunable electronic properties. In the present study, we investigate the hydrogenated two-dimensional (2D) h-BN/C superlattices (SLs) with zigzag edges using first-principles calculations. We found that the domain width, the phase ratio, and the vertical dipole orientation all have significant influence on the stability of SLs. The electronic reconstruction is associated with the lateral polar discontinuities at the zigzag edges and the vertically polarized (B2N2H4)(m) domains, which modifies the electronic structures and the spatial potential of the SLs significantly. Furthermore, we demonstrate that the hydrogenated 2D h-BN/C SLs can be applied in engineering the electronic structure of graphene: laterally-varying doping can be achieved by taking advantage of the spatial variation of the surface potential of the SLs. By applying an external vertical electric field on these novel bidirectional heterostructures, graphene doping levels and band offsets can be tuned to a wide range, such that the graphene doping profile can be switched from the bipolar (p-n junction) to unipolar (n(+)-n junction) mode. It is expected that such bidirectional heterostructures provide an effective approach for developing novel nanoscale electronic devices and improving our understanding of the fundamentals of low-dimensional materials.

A low cost, green method to synthesize GaN nanowires.

The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 µm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice.

Bipolar doping of double-layer graphene vertical heterostructures with hydrogenated boron nitride.

Using first-principles calculations, we examined the bipolar doping of double-layer graphene vertical heterostructures, which are constructed by hydrogenated boron nitride (BN) sheets sandwiched into two parallel graphene monolayers. The built-in potential difference in hydrogenated BN breaks the interlayer symmetry, resulting in the p- and n-type doping of two graphene layers at 0.83 and -0.8 eV, respectively. By tuning the interlayer spacing between the graphene and hydrogenated BN, the interfacial dipole and screening charge distribution can be significantly affected, which produces large modulations in band alignments, doping levels and tunnel barriers. Furthermore, we present an analytical model to predicate the doping level as a function of the average interlayer spacing. With large interlayer spacings, the "pillow effect" (Pauli repulsion at the highly charge overlapped interface) is diminished and the calculated Dirac point shifts are in good accordance with our prediction models. Our investigations suggest that this double-layer graphene heterostructures constructed using two-dimensional Janus anisotropic materials offer exciting opportunities for developing novel nanoscale optoelectronic and electronic devices.

Two dimensional Dirac carbon allotropes from graphene.

Using a structural search method in combination with first-principles calculations, we found lots of low energy 2D carbon allotropes and examined all possible Dirac points around their Fermi levels. Three amazing 2D Dirac carbon allotropes have been discovered, named as S-graphene, D-graphene and E-graphene. By analyzing the topology correlations among S-, T, net W graphene and graphene, we found that a general rule is valuable for constructing 2D carbon allotropes that are keen to possess Dirac cones in their electronic structures. Based on this rule, we have successfully designed many new 2D carbon allotropes possessing Dirac cones. Their energy order can be well described by an Ising-like model, and some allotropes are energetically more stable than those recently reported. The related electronic structures of these Dirac allotropes are anisotropy distinguished from those of graphene. Moreover, the fact that D- and E-graphene present Dirac cones suggests that sp hybridization or sp(3) hybridization could not suppress the emerging of Dirac features. Our results demonstrate that the Dirac cone and carrier linear dispersion is a very common feature in 2D carbon allotropes and can exist beyond the limitations of fundamental structure features of graphene.

Photocycloadditions of substituted oxazoles with isoquinoline-1,3,4-trione--chemo-, regio-, diastereoselectivities and transformation of the photocycloadducts.

Photoreactions of isoquinoline-1,3,4-triones and oxazoles with different substituents were found to give different chemo-, regio- and diastereoselectivities. The substituent at the C5 on the oxazole ring showed great influence on the chemoselectivity of the photoreaction as well as on the transformation of the photocycloadducts. The 2-methyl-5-methoxyoxazoles reacted with isoquinoline-1,3,4-triones rapidly and gave spirooxetanes with high regio- and diastereo-selectivity. Diastereoselectivity in the reaction of 2-phenyl-5-methoxyoxazoles with isoquinoline-1,3,4-triones was relevant to the substituent on the 4-position on the oxazole ring. Replacement of the 5-methoxy group with 5-methyl or 5-phenyl resulted in significant decrease on the reactivity of the oxazole as well as change on the diastereoselectivity in photocycloaddition with isoquinoline-1,3,4-triones. Acid-mediated transformations of the photocycloadduct spirooxetanes was found to give different type of products including ß-hydroxy-α-aminocarbonyl compounds and spiroisoquinolineoxazolines under different reaction conditions. Substituents on the spirooxetanes as well as the type and amount of acid used in the reaction played important roles in determining the type and diastereoselectivity of the products in the transformations.

Modified morphology of graphene sheets by Argon-atom bombardment: molecular dynamics simulations.

By a molecular dynamics method, we simulated the process of Argon-atom bombardment on a graphene sheet with 2720 carbon atoms. The results show that, the damage of the bombardment on the graphene sheet depends not only on the incident energy but also on the particle flux density of Argon atoms. To compare and analyze the effect of the incident energy and the particle flux density in the Argon-atom bombardment, we defined the impact factor on graphene sheet by calculating the broken-hole area. The results indicate that, there is an exponential accumulated-damage for the impact of both the incident energy and the particle flux density and there is a critical incident energy ranging from 20-30 eV/atom in Argon-atom bombardment. Different configurations, such as sieve-like and circle-like graphene can be formed by controlling of different particle flux density as the incident energy is more than the critical value. Our results supply a feasible method on fabrication of porous graphene-based materials for gas-storages and molecular sieves, and it also helps to understand the damage mechanism of graphene-based electronic devices under high particle radiation.