A new methodology for studying vortex dynamics based on point-contact spectroscopy.

Vortex dynamics has attracted tremendous attention for both fundamental physics and applications of type-II superconductors. However, methods to detect local vortex motion or vortex jump with high sensitivity are still scarce. Here, we fabricated soft point contacts on the clean layered superconductor 2H-NbSe2, which are demonstrated to contain multiple parallel micro-constrictions by scanning electronic microscopy. Andreev reflection spectroscopy was then studied in detail for the contacts. Differential conductance taken at fixed bias voltages was discovered to vary spontaneously over time in various magnetic fields perpendicular to the sample surface. The conductance variations become invisible when the field is zero or large enough, or parallel to the sample surface, which can be identified as the immediate consequence of vortex motion across a finite number of micro-constrictions. These results demonstrate point contact Andreev reflection spectroscopy to be a new potential way with a high time resolution to study the vortex dynamics in type-II superconductors.

A high-performance long-wave infrared photodetector based on a WSe2/PdSe2 broken-gap heterodiode.

Layered narrow bandgap quasi-two-dimensional (2D) transition metal dichalcogenides (TMDs) demonstrated excellent performance in long-wave infrared (LWIR) detection. However, the low light on/off ratio and specific detectivity (D*) due to the high dark current of the device fabricated using a single narrow bandgap material hindered its wide application. Herein, we report a type-III broken-gap band-alignment WSe2/PdSe2 van der Waals (vdW) heterostructure. The heterodiode device has a prominently low dark current and exhibits a high photoresponsivity (R) of 55.3 A W-1 and a high light on/off ratio >105 in the visible range. Notably, the WSe2/PdSe2 heterodiode shows an excellent uncooled LWIR response, with an R of ∼0.3 A W-1, a low noise equivalence power (NEP) of 4.5 × 10-11 W Hz-1/2, and a high D* of 1.8 × 108 cm Hz1/2 W-1. This work provides a new approach for designing high-performance room-temperature operational LWIR photodetectors.

Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors.

Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 × 10-14  W Hz-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 1010  cm Hz1/2  W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.