Polarization-insensitive tunable multifocal liquid crystal microlens array with dual lens modes.

Microlens has significant applications in integrated micro-optical systems. Recently, multifocal microlens arrays are expected to extend the depth of field for imaging systems and realize a highly efficient laser beam homogenizer. This work presents what we believe to be a novel approach for developing a tunable multifocal liquid crystal microlens array (TMLCMA), which can be operated in convex and concave modes through voltage control schemes. The TMLCMA is manufactured using nematic liquid crystals (LCs) with negative dielectric anisotropy, in conjunction with a triple-electrode structure consisting of top large-hole, middle small-hole array, and bottom planar electrodes. When a voltage is applied, the axially symmetric fringing electric field induced by the large-hole electrode causes the focal length of the microlens to gradually and radially change from the TMLCMA border toward the center. The gradient in the change of focal length is electrically tunable. The calculated spatial potential distributions qualitatively explain the multifocal characteristic and dual lens modes of the TMLCMA. The LC molecules in each microlens are reoriented in an axially symmetrical form, resulting in a polarization-insensitive TMLCMA. The imaging functions of the TMLCMA operated with dual lens modes are shown through practical demonstrations. The simple fabrication and versatile function make the developed TMLCMA highly promising for various optical system applications.

Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric.

In this study, a high-K material, aluminum oxide (AlOx), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, we modified the gate dielectric of OFETs using polyimide (PI) with different solid contents to tune the properties and reduce the trap state density of the gate dielectric, leading to controllable stability in the N, N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs. Thus, gate field-induced stress can be compensated for by the carriers accumulated due to the dipole field created by electric dipoles within the PI layer, thereby improving the OFET's performance and stability. Moreover, if the OFET is modified by PI with different solid contents, it can operate more stably under fixed gate bias stress over time than the device with AlOx as the dielectric layer only can. Furthermore, the OFET-based memory devices with PI film showed good memory retention and durability. In summary, we successfully fabricated a low-voltage operating and stable OFET and an organic memory device in which the memory window has potential for industrial production.

Rubbing-free liquid crystal electro-optic device based on organic single-crystal rubrene.

Liquid crystals (LCs) have been a vital component of modern communication and photonic technologies. However, traditional LC alignment on polyimide (PI) requires mechanically rubbing treatment to control LC orientation, suffering from dust particles, surface damage, and electrostatic charges. In this paper, LC alignment on organic single-crystal rubrene (SCR) has been studied and used to fabricate rubbing-free LC devices. A rubrene/toluene solution is spin-coated on the indium-tin-oxide (ITO) substrate and transformed thereafter to the orthorhombic SCR after annealing. Experimental result reveals that SCR-based LC cell has a homogeneous alignment geometry, the pretilt angle of LCs is low and the orientation of LCs is determined with capillary filling action of LCs. LC alignment on SCR performs a wider thermal tolerance than that on PI by virtue of the strong anchoring nature of LCs on SCR due to van der Waals and π-π electron stacking interactions between the rubrene and LCs. SCR-based LC cell performs a lower operation voltage, faster response time, and higher voltage holding ratio than the traditional PI-based LC cell. Organic SCR enables to play a role as weakly conductive alignment layer without rubbing treatment and offers versatile function to develop novel LC devices.

High Performance of Post-Treated PEDOT:PSS Thin Films for Thermoelectric Power Generation Applications.

Thermoelectric materials capable of converting waste heat energy into electrical energy are enchanting for applications in wearable electronics and sensors by harvesting heat energy of the human body. Organic conducting polymers offer promise of thermoelectric materials for next-generation power sources of wearable devices due to their low cost in preparation, easy processing, low toxicity, low thermal conductivity, mechanical flexibility, light weight, and large area application. Generally, the pristine PEDOT:PSS film has low electrical conductivity, small Seebeck coefficient, and low thermal conductivity. The thermoelectric power factors of conducting polymers of p-type PEDOT:PSS films are considerably improved via synergistic effect by using ethylene glycol and reductants of EG/NaBH4 or EG/NaHCO3. As such, the charge carrier concentration of PEDOT:PSS films is tuned. The synergistic effect might lead to enhanced variation of density of states at the Fermi level and hence enhanced Seebeck coefficient. The resulting PEDOT:PSS films were characterized by atomic force microscopy (AFM), Raman spectroscopy, and XPS spectroscopy. The electrical conductivity and Seebeck coefficient were measured between 325 and 450 K. The carrier concentration and mobility were obtained by Hall measurements. The pristine thin film treated with 0.05 M EG/NaHCO3 solution exhibits the highest power factor of 183 µW m-1 K-2 at 450 K among these two series of films due to its significant enhanced Seebeck coefficient of 48 µV/K. The maximum output power of 121.08 nW is attained at the output voltage of 6.98 mV and the output current of 17.45 µA. The corresponding maximum power density is 98 µW/cm2 for a power generation device made of four pairs of p-leg (EG/NaHCO3 post-treated PEDOT:PSS) and n-leg (Cu0.6Ni0.4) on the polyamide substrate with the size of 4 mm × 20 mm for each leg.

Iron accumulation regulates osteoblast apoptosis through lncRNA XIST/miR-758-3p/caspase 3 axis leading to osteoporosis.

Postmenopausal osteoporosis (PMOP) is mainly caused by multiple factors. Recent studies have suggested that iron accumulation (IA) was closely related to PMOP. However, the detailed molecular mechanisms have not been well demonstrated. We constructed the IA mouse model by intraperitoneal injections of ferric ammonium citrate (FAC) and cell model by culturing with the medium containing FAC. Osteoporosis was confirmed in mouse bone tissues using H&E staining, and the level of serum ferritin, alkaline phosphatase (ALP), procollagen-1 N-terminal peptide (P1NP), and osteocalcin in mice was examined by ELISA. The expressions of XIST and miR-758-3p were detected by qRT-PCR. Cell proliferation and apoptosis were measured by CCK-8, TUNEL, and flow cytometry. The expression levels of apoptotic-related proteins were evaluated by western blot. Dual luciferase reporter assay was used to examine the molecular interaction. The expressions of ALP, P1NP, and osteocalcin, and the H&E staining of bone tissues in mice were analyzed to confirm the biological function of XIST and miR-758-3p in vivo. XIST was up-regulated while miR-758-3p was down-regulated in IA mouse and cell models. XIST knockdown significantly reduced FAC-induced osteoblast apoptosis, which was mimicked by transfection with miR-758-3p mimics. XIST acted as a sponge of miR-758-3p, which targeted caspase 3. IA led to the high expression of XIST and promoted osteoblast apoptosis through miR-758-3p/caspase 3. Transfection with shXIST or miR-758-3p mimics alleviated IA-induced mouse osteoporosis. IA regulated osteoblast apoptosis through XIST/miR-758-3p/caspase 3 axis, which might provide alternative targets for the treatment of osteoporosis.

Enhanced Functionality of Dual-Gate Organic Transistors Based on Semiconducting/Insulating Polyblend-Induced Asymmetric Charge Modulation Layers.

Dual-gate organic thin-film transistors (DG-OTFTs) with enhanced functionality, including large current enhancement behavior, highly efficient threshold voltage controllability, and self-contained dual-mode logic gate features, are reported. These DG-OTFTs are based on a semiconducting/insulating polyblend-based active layer with asymmetric top and bottom charge modulation layers (atb-CMLs). The atb-CMLs are automatically generated through the preparation of multilayer stacks of phase-separated semiconducting poly(3-hexylthiophene) (P3HT):insulating poly(methylmethacrylate) (PMMA) polyblend layer, poly(vinylidene fluoride) (PVDF) layer, and cross-linked-poly(4-vinylphenol) (cPVP) layer. They consist of a thin PMMA bottom layer and an uneven-shaped PMMA:PVDF miscible mixture-based top layer. The presence of the polarizable insulating PMMA, PVDF, and PMMA:PVDF mixture regions causes the bottom and top CMLs to experience electrical polarization, which induces the dipole field to achieve efficient charge modulation functions in DG-OTFTs. Owing to the presence of atb-CMLs, the DG-OTFTs exhibit unprecedented electrical characteristics, such as the easy depletion of the bottom channel by the top gate potential. However, the top channel can work properly only when given a bottom gate potential (either positive or negative). Given these unusual electrical features, the design of the fundamental dual-mode logic gates (e.g., AND and OR gates) can be achieved with just one DG transistor. This finding opens an interesting direction for the preparation of DG-OTFTs with diverse operating modes and increasing functionality, thereby widening the application potential of such transistors.

Applications of machine learning techniques to a sensor-network-based prosthesis training system.

In the past, the utilization of the limb prosthesis has improved the daily life of amputees or patients with movement disorders. However, a leg-amputee has to take a series of training after wearing a limb prosthesis, and the training results determine whether a patient can use the limb prosthesis correctly in her/his daily life. Limb prosthesis vendors thus desire to offer the leg-amputee a complete and well-organized training process, but they often fail to do so owing to the factors such as the limited support of human resource and financial condition of the amputee. This work proposes a prosthesis training system that the amputees can borrow or buy from the limb prosthesis vendors and train themselves at home. Instant feedback messages provided by the prosthesis training system are used to correct their walking postures during the self-training process. An embedded chip is used as a core to establish a body area sensor network for the prosthesis training system. RFID readers and tags are employed to acquire the 3D positioning information of the amputee's limbs in this work to assist in diagnosing the amputee's walking problem. A series of simulations were conducted and the simulation results exhibit the effectiveness and practicability of the proposed prosthesis training system.