Broadband and low-loss TM-pass polarizer using tilted subwavelength structures.

Photonic systems built on the Silicon-on-Insulator platform exhibit a strong birefringence, and must thus be operated with a single polarization for most applications. Hence, on-chip polarizers that can effectively suppress an undesired polarization state are key components for these systems. Polarizers that extinguish TE polarized light while letting TM polarized light pass with low losses are particularly challenging to design for the standard 220 nm Silicon-on-Insulator platform, because the modal confinement is stronger for TE polarization than for TM polarzation. Here, we propose and design a broadband, low loss and high extinction ratio TM-pass polarizer by engineering a Bragg grating that reflects the fundamental TE mode into the first order TE mode using a subwavelength metamaterial which at the same time allows the TM mode to pass. Our device achieves an extinction ratio in excess of 20 dB, insertion losses below 0.5 dB and back-reflections of the fundamental TE mode of the order of -20 dB in a bandwidth of 150 nm as demonstrated with full 3D-FDTD simulations.

Perfectly vertical surface grating couplers using subwavelength engineering for increased feature sizes.

We present perfectly vertical grating couplers for the 220 nm silicon-on-insulator platform incorporating subwavelength metamaterials to increase the minimum feature sizes and achieve broadband low back-reflection. Our study reveals that devices with high coupling efficiencies are distributed over a wide region of the design space with varied back-reflections, while still maintaining minimum feature sizes larger than 100 nm and even 130 nm. Using 3D-finite-difference time-domain simulations, we demonstrate devices with broadband low back-reflection of less than -20dB over more than 100 nm bandwidth centered around the C-band. Coupling efficiencies of 72% and 67% are achieved for minimum feature sizes of 106 nm and 130 nm, respectively. These gratings are also more fabrication tolerant compared to similar designs not using metamaterials.

Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO2 upper cladding thin high-index Si3N4 layers. The Si3N4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.