Exploring publications in 3 major orthodontic journals: A comparative bibliometric analysis of two 10-year periods (2002-2011 and 2012-2021).

INTRODUCTION: This study aimed to perform a bibliometric analysis examining contributing countries and collaborative networks, authors and collaborative relationships, the performance of the institutions, and cocited journals and references in 3 major orthodontic journals (American Journal of Orthodontics and Dentofacial Orthopedics, European Journal of Orthodontics, and Angle Orthodontist) over two 10-year periods (2002-2011 and 2012-2021). METHODS: In this study, 4432 publications in the first decade and 4012 publications in the second decade were quantitatively analyzed and visualized using visualization software such as VOSviewer (Leiden University, Leiden, Netherlands), CiteSpace (Drexel University, Philadelphia, Pa), and Scimago Graphica (SCImago Lab, Spain). RESULTS: Institutions in the United States had the highest number of publications through the 2 decades, whereas Brazil, South Korea, and China achieved significant improvements in performance in the second decade compared with the first. Closer collaborative networks among scholars were revealed in the second decade. The cocitation analysis of the journals showed that highly cited journals included more professional orthodontic journals in the second decade than in the first decade. CONCLUSIONS: Bibliometric analysis of publications in 3 major orthodontic journals over two 10-year periods revealed a trend of diversification in countries and institutions participating in publishing, international collaborations, and collaboration networks among authors in the field of orthodontics during the 2 decades.

Light-activated electric bistability for evaporated silver nanoparticles in organic field-effect transistors.

Evaporated naked silver nanoparticles (Ag-NPs) were embedded in the isolated layer of PTB7-based organic field-effect transistors (OFETs), where their electric bistability behavior was successfully activated by photo-irradiation. These devices showed no obvious memory behavior in the dark; while under weak photo-irradiation (0.015 mW cm-2), memory windows of 12.5-35 V have been achieved. Different operation modes have been designed to exhibit the memory behavior and to explore the origin of the formation of a stable charge state. The immobilized photo-generated electrons supplied an additional photo-generated electric field, which confined the trapped charge in the charge storage media after the gate voltage and photo-irradiation being removed. The photo-irradiation created more charges at the interface, and the presence of Ag-NPs allowed effective charge storage of the majority carriers, which increased the drain current and lowered the gate-operating voltage. This method is a novel approach to light-activated electric bistability based charge storage.