High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field.

Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the structural uniformity. Herein, in this study, the bias-modulated MaCE process was performed, showing the etching rates more than four times of magnitude than that of typical bias-free MaCE with large-area uniformity. It was found that the field-mediated hole rectification overwhelmed the effect of retarded diffusivity from reactive ions, and thus the dynamics of distributed etching were therefore transferred to the directional etching behaviors. In addition, the etching orientation could be also manipulated with the external bias. The results demonstrated that the etching direction was switched toward the slanted features by varying the electric polarization, creating the special slanted/vertical NW arrays, which possessed the superior antireflection characteristics than the conventional vertically aligned features.

Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates.

Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rates upon MaCE process could be found by employing the conductive back substrates on p-type Si, while additionally prevented the creation of nanopores from catalytic etching reaction. Examinations on the involving etching kinetics, morphologies, wetting behaviors and surface structures were performed that validated the role of back substrates upon MaCE process. It was found that the involved two pathways for the extraction of electrons within Si favored the localized oxidation of Si at Si/Ag interfaces, thereby increasing the etching rate of MaCE process. This back-substrate involved MaCE could potentially meet the practical needs for the high-yield formation of Si nanowire arrays.

Well incorporation of carbon nanodots with silicon nanowire arrays featuring excellent photocatalytic performances.

Recently, silicon (Si) nanowires have been intensively applied for a wide range of optoelectronic applications. Nevertheless, rare explorations considering the photodegradation of organic pollutants based on Si nanowires were performed, and they still require vast improvement, in particular for their degradation efficiency. In this study, broad-band and high efficiency photocatalytic systems were demonstrated through the good incorporation of Si nanowires with highly fluorescent carbon nanodots. The photodegradation rate of these intriguing heterostructure arrays under a 580 nm light illumination is approximately 6 times higher than that of sole Si nanowires, and more than 3.6 and 4.5 times higher than that of Si nanowire incorporated with silver and gold nanoparticles, respectively. Optimizing the luminescent behaviors of carbon nanodots leads to the involvement of multiple light sources that activate the photoexcitation of carriers within the Si nanowires. This feature was further elucidated by examining the corresponding photocurrents under light illumination, which presents currents 1.9 times higher than those with the sole Si nanowires. In combination with excellent wettability with dye solutions, the present heterostructured nanowire arrays have promised the robust photocatalytic capability with retained efficiency after cycling uses, which may open up unique opportunities for future pollutant detoxification and wastewater treatment.