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1.
Effect of strain on a second-order van Hove singularity in AlxGa1-xAs/InyGa1-yAs quantum wells.
Kemerink M; Koenraad PM; Wolter JH.
Phys Rev B Condens Matter ; 54(15): 10644-10651, 1996 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9984861
2.
Electronic structure of a Si delta -doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier.
Shi JM; Koenraad PM; van de Stadt AF; Peeters FM; Devreese JT; Wolter JH.
Phys Rev B Condens Matter ; 54(11): 7996-8004, 1996 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9984477
3.
Reflection of finite-width edge channels.
van Haren RJ; Markvoort AJ; van Rijswijk AJ; Blom FA; Wolter JH.
Phys Rev B Condens Matter ; 54(4): 2806-2812, 1996 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-9986134
4.
Electron-phonon coupling in a delta -doped n-i-p structure in GaAs.
Henning JC; de Groote FP; van der Vleuten WC; Wolter JH.
Phys Rev B Condens Matter ; 53(23): 15802-15809, 1996 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9983416
5.
Enhancement of spin-dependent hole delocalization in degenerate asymmetric double quantum wells.
Kemerink M; Koenraad PM; Christianen PC; Geim AK; Maan JC; Wolter JH; Henini M.
Phys Rev B Condens Matter ; 53(15): 10000-10007, 1996 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-9982565
6.
Be Delta-Doped Layers in GaAs Imaged with Atomic Resolution Using Scanning Tunneling Microscopy.
Johnson MB; Koenraad PM; van der Vleuten WC; Salemink HW; Wolter JH.
Phys Rev Lett ; 75(8): 1606-1609, 1995 Aug 21.
Artigo em Inglês | MEDLINE | ID: mdl-10060340
7.
Imaging of edge channels in the integer quantum Hall regime by the lateral photoelectric effect.
van Haren RJ; de Lange W; Blom FA; Wolter JH.
Phys Rev B Condens Matter ; 52(8): 5760-5766, 1995 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-9981763
8.
Direct observation of edge channels in the integer quantum hall regime.
van Haren RJ; Blom FA; Wolter JH.
Phys Rev Lett ; 74(7): 1198-1201, 1995 Feb 13.
Artigo em Inglês | MEDLINE | ID: mdl-10058959
9.
Polarization of tunneling-assisted recombination of two-dimensional holes.
Silov AY; Haverkort JE; Averkiev NS; Koenraad PM; Wolter JH.
Phys Rev B Condens Matter ; 50(7): 4509-4513, 1994 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-9976754
10.
Selective exciton formation in thin GaAs/AlxGa1-xAs quantum wells.
Blom PW; van Hall PJ; Smit C; Cuypers JP; Wolter JH.
Phys Rev Lett ; 71(23): 3878-3881, 1993 Dec 06.
Artigo em Inglês | MEDLINE | ID: mdl-10055096
11.
Edge-channel transport in the presence of a lateral concentration gradient in the two-dimensional electron gas.
van Haren RJ; Maessen RT; Blom FA; Wolter JH.
Phys Rev B Condens Matter ; 48(24): 17897-17901, 1993 Dec 15.
Artigo em Inglês | MEDLINE | ID: mdl-10008423
12.
Separation of edge channels by a macroscopic distance in a half-gated GaAs/AlxGa1-xAs heterostructure.
van Haren RJ; Blom FA; de Lange W; Wolter JH.
Phys Rev B Condens Matter ; 47(23): 15700-15704, 1993 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-10005964
13.
Carrier capture into a semiconductor quantum well.
Blom PW; Smit C; Haverkort JE; Wolter JH.
Phys Rev B Condens Matter ; 47(4): 2072-2081, 1993 Jan 15.
Artigo em Inglês | MEDLINE | ID: mdl-10006246
14.
Band-structure modifications due to photogenerated carriers in a GaAs/AlxGa1-xAs heterostructure.
Weegels LM; Haverkort JE; Leys MR; Wolter JH.
Phys Rev B Condens Matter ; 46(7): 3886-3892, 1992 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-10004115
15.
Spatial potential distribution in GaAs/AlxGa1-xAs heterostructures under quantum Hall conditions studied with the linear electro-optic effect.
Fontein PF; Kleinen JA; Hendriks P; Blom FA; Wolter JH; Lochs HG; Driessen FA; Giling LJ; Beenakker CW.
Phys Rev B Condens Matter ; 43(14): 12090-12093, 1991 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9996998
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