Development of a visual information to auditory information transformation system for ambulation assistance.

BACKGROUND: Assistant equipment for the visually impaired has a white cane. If the information in the three-dimensional space is transmitted by sound, the blind can draw a three-dimensional space. OBJECTIVE: This study developed "Visual System," an ambulation aid/guide for the blind that transforms visual-spatial information into auditory information, and verified its utility. Unlike conventional systems, which are in essence simple collision-warning systems, Visual System helps the visually impaired to recreate their surroundings and to be cognizant of the location and proximity of obstacles. METHODS: Ten subjects with normal vision (mean age: 32.4 years; male-to-female ratio: 6 to 4) were selected for blind tests. The subjects were instructed to detect and avoid obstacles presented in various three-dimensional settings. Prior to the tests, experiments were conducted to determine the distance to each subject. Upon completion of Visual System-based detection training, obstacles were presented and tests conducted. For evaluation, the subjects' vertical position detection, horizontal position detection, distance detection, and overall performance success were each evaluated. RESULTS: The total performance scores ranged between 88 (lowest) and 100 (highest), with a mean score of 91.5. CONCLUSIONS: The results indicate that Visual System as a product can assist the visually impaired in their daily functioning.

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate.

The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration process is typically utilized, which involves a backside substrate etching and a wafer-to-wafer bonding process. In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) on an epitaxially grown GaN layer on silicon substrate. An MSM-type UV sensor had a low dark current density of 3.3 × 10-7 A/cm² and a high UV/visible rejection ratio of 10³. The GaN SB-MOSFET showed a normally-off operation and exhibited a maximum drain current of 0.5 mA/mm and a maximum transconductance of 30 µS/mm with a threshold voltage of 4.5 V. The UV PPS showed good UV response and a high dark-to-photo contrast ratio of 10³ under irradiation of 365-nm UV. This integration technique will provide one possible way for a monolithic integration of the GaN-based optoelectronic devices.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al0.83In0.17N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a faster response time, lower degradation and good stability with respect to the AlGaN/GaN device, which is attributed to higher two-dimensional electron gas (2DEG) density and a thinner barrier layer in Al0.83In0.17N/GaN owning to lattice matching. On the other hand, the open gate geometry was found to affect the pH sensitivity obviously. Properly increasing the width and shortening the length of the open gate area could enhance the sensitivity. However, when the open gate width is too larger or too small, the pH sensitivity would be suppressed conversely. Designing an optimal ratio of the width to the length is important for achieving high sensitivity. This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would be good candidates for high-performance pH sensors and other related applications.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa-xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1-xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10-² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

In vivo evaluation of mastication noise reduction for dual channel implantable microphone.

Input for fully implantable hearing devices (FIHDs) is provided by an implantable microphone under the skin of the temporal bone. However, the implanted microphone can be affected when the FIHDs user chews. In this paper, a dual implantable microphone was designed that can filter out the noise from mastication. For the in vivo experiment, a fabricated microphone was implanted in a rabbit. Pure-tone sounds of 1 kHz through a standard speaker were applied to the rabbit, which was given food simultaneously. To evaluate noise reduction, the measured signals were processed using a MATLAB program based adaptive filter. To verify the proposed method, the correlation coefficients and signal to-noise ratio before and after signal processing were calculated. By comparing the results, signal-to-noise ratio and correlation coefficients are enhanced by 6.07dB and 0.529 respectively.